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SMV512K32HFG

Texas Instruments

SMV512K32HFG by Texas Instruments

Texas Instruments' SMV512K32HFG is a 512Kx32 SRAM with 22MHz clock frequency, operating at -55 to 125°C. It features common I/O type, 3-STATE output characteristics, and gold terminal finish. Ideal for military applications requiring fast access times and low standby current consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,102 parts In-Stock

1+ parts

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3,102

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Vyrian

USA . 2,813 parts In-Stock

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2,813

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,353 parts In-Stock

1+ parts

$3.137

100+ parts

-

1k+ parts

$3.657

10k+ parts

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1,353

$3.137

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$3.657

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IDEA Electronic Components Group

UK . 2,202 parts In-Stock

1+ parts

$3.525

100+ parts

-

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$3.172

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2,202

$3.525

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$3.172

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ChromeModa Solutions

Germany . 1,772 parts In-Stock

1+ parts

$3.525

100+ parts

$2.890

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-

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1,772

$3.525

$2.890

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AZTECH Wire

Italy . 883 parts In-Stock

1+ parts

$8.751

100+ parts

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883

$8.751

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One Stop Electronics

USA . 868 parts In-Stock

1+ parts

$22.000

100+ parts

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868

$22.000

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Ampacity Inc.

Singapore . 527 parts In-Stock

1+ parts

$27.000

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527

$27.000

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Corphita

USA . 3,055 parts In-Stock

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3,055

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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DigiPath Technology Company

USA . 833 parts In-Stock

1+ parts

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$3.178

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833

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$3.178

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Microchip USA

USA . 244 parts In-Stock

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244

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Overview

Experience superior quality and performance with the Texas Instruments SMV512K32HFG SRAM. Designed with precision and reliability in mind, this memory device is perfect for a wide range of applications. From aerospace to industrial control systems, this product offers unmatched value and benefits to customers looking for a dependable solution. Trust in Texas Instruments' reputation for excellence and innovation, and elevate your projects with the SMV512K32HFG SRAM.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protection for the SRAM, ensuring long-term reliability.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient communication with other components in the system.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures that the SRAM can function effectively even in demanding environmental conditions.

Maximum Clock Frequency (fCLK): 22 MHz

The high clock frequency enables fast data access and processing, making this SRAM suitable for applications requiring high-speed operation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the SRAM.

Maximum Access Time: 20 ns

The low access time allows for quick retrieval of data, making this SRAM ideal for applications that require rapid data access.

Technical Specifications

SRAM SMV512K32HFG attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

20 ns

Maximum Clock Frequency (fCLK):

22 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-CQFP-F76

JESD-609 Code:

e4

Length:

25.31 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

76

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512KX32

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

TPAK76,2SQ,25

Package Shape:

Package Style (Meter):

FLATPACK, GUARD RING

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Qualification:

Not Qualified

Screening Level:

38535V;38534K;883S

Maximum Seated Height:

2.67 mm

Maximum Standby Current:

.00033 Amp

Minimum Standby Voltage:

1.7 V

Sub-Category:

SRAMs

Maximum Supply Current:

635 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

GOLD

Terminal Form:

FLAT

Terminal Pitch:

.64 mm

Terminal Position:

QUAD

Width:

20.46 mm

Trade Compliance

SMV512K32HFG Memory ICs trade compliance attributes, and parameters.

ECCN

9A515.E.1

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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