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IS61LPS25618EC-200TQLI

Integrated Silicon Solution

IS61LPS25618EC-200TQLI by Integrated Silicon Solution

IS61LPS25618EC-200TQLI by Integrated Silicon Solution is a 256KX18 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a low profile FLATPACK package and operates in industrial temperature range. Ideal for applications requiring fast access time and high memory density.

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4

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1k+

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Vyrian

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Nova Conductors

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ComSIT Distribution GmbH

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Aztec Data Supply Inc.

USA . 2,223 parts In-Stock

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$2.712

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Corohmni

South Africa . 171 parts In-Stock

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AZTECH Wire

Italy . 242 parts In-Stock

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Component Stockers USA

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Continental Prestige Electronics

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Argo Parts USA

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Aranea Global

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Overview

Elevate your electronic devices with the IS61LPS25618EC-200TQLI SRAM by Integrated Silicon Solution. Crafted with precision and quality in mind, this cache SRAM offers unparalleled performance and reliability for industrial applications. With a maximum clock frequency of 200 MHz and a low profile package style, this memory IC type is designed to optimize speed and efficiency. Trust in ISS to deliver cutting-edge technology that enhances the functionality of your products. Experience the difference with IS61LPS25618EC-200TQLI - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and long-lasting.

Surface Mount: YES

Allows for easy installation on circuit boards without the need for additional components.

Operating Mode: SYNCHRONOUS

Enables fast and efficient data processing and communication within the system.

Nominal Supply Voltage / Vsup (V): 3.3

Stable supply voltage ensures reliable performance of the product.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency allows for quick data access and transfer speeds.

Memory IC Type: CACHE SRAM

Cache SRAM design enhances the speed and performance of the memory in the system.

Technical Specifications

SRAM IS61LPS25618EC-200TQLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

3.1 ns

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PQFP-G100

JESD-609 Code:

e3

Length:

20 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX18

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63X.87

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3,3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.085 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

10

Width:

14 mm

Trade Compliance

IS61LPS25618EC-200TQLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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