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SN74AS870DWR

Texas Instruments

SN74AS870DWR by Texas Instruments

SN74AS870DWR by Texas Instruments is a 16x4 MULTI-PORT SRAM with 64-bit memory density. It operates at 5V, has a max access time of 15ns, and features 3-STATE output characteristics. This TTL technology chip is ideal for applications requiring fast and efficient parallel memory storage.

Median Price

$7.046

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,000 parts In-Stock

1+ parts

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1,000

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DigiKey

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$7.230

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1,000

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$7.230

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Verical

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$6.862

1k+ parts

$6.138

10k+ parts

$5.775

1,000

-

$6.862

$6.138

$5.775

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,149 parts In-Stock

1+ parts

$5.795

100+ parts

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3,149

$5.795

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Vyrian

USA . 3,485 parts In-Stock

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DigiKey Marketplace

USA . 1,000 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,728 parts In-Stock

1+ parts

$3.839

100+ parts

-

1k+ parts

$4.325

10k+ parts

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1,728

$3.839

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$4.325

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DigiPath Technology Company

USA . 718 parts In-Stock

1+ parts

$4.228

100+ parts

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718

$4.228

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ChromeModa Solutions

Germany . 6,808 parts In-Stock

1+ parts

$4.314

100+ parts

$3.537

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-

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6,808

$4.314

$3.537

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IDEA Electronic Components Group

UK . 645 parts In-Stock

1+ parts

$4.314

100+ parts

-

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$3.883

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645

$4.314

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$3.883

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Corphita

USA . 1,578 parts In-Stock

1+ parts

$5.490

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1,578

$5.490

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Overview

Upgrade your electronic devices with the high-quality SN74AS870DWR by Texas Instruments, a leading manufacturer in the industry. This versatile SRAM chip offers unparalleled performance and reliability, making it perfect for a wide range of applications. Experience seamless operation with its asynchronous mode and 3-STATE output characteristics. With a compact design and commercial-grade temperature resistance, this product is a valuable addition to any project. Trust Texas Instruments to deliver exceptional products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the SRAM, making it suitable for various environmental conditions.

Surface Mount: YES

Surface mount packaging allows for easy integration and installation on circuit boards, making it convenient for electronic device manufacturers.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data processing and performance, which is essential for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources and stable performance under normal operating conditions.

No. of Terminals: 24

Having 24 terminals enables multiple connections and efficient data transfer within the SRAM device.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this SRAM can withstand high temperatures and maintain reliable performance in demanding environments.

Output Characteristics: 3-STATE

3-STATE output characteristics allow for flexible control of data output, reducing power consumption and improving overall system efficiency.

Memory Density: 64 bit

With a memory density of 64 bits, this SRAM can store and retrieve a large amount of data quickly and efficiently, making it suitable for data-intensive applications.

Maximum Access Time: 15 ns

A maximum access time of 15 nanoseconds ensures fast data access and retrieval, enhancing the overall performance of the SRAM in time-critical applications.

Technical Specifications

SRAM SN74AS870DWR attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

DUAL MEMORY FOR MULTIBUS ARCHITECTURE

JESD-30 Code:

R-PDSO-G24

Length:

15.4 mm

Memory Density:

64 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

24

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16X4

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

SN74AS870DWR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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