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71V35761S183BGGI

Integrated Device Technology

71V35761S183BGGI by Integrated Device Technology

Integrated Device Technology's 71V35761S183BGGI is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz. It features a 3-STATE output and operates at an industrial temperature range of -40 to 85 °C. Suitable for applications requiring fast access times and high memory density.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 6,916 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 975 parts In-Stock

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AZTECH Wire

Italy . 289 parts In-Stock

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Semicontronic

India . 303 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,380 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Aranea Global

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Microchip USA

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Overview

Experience unparalleled performance and reliability with the 71V35761S183BGGI by Integrated Device Technology. As a leading manufacturer in the industry, IDT's SRAM technology offers fast access times and low power consumption, making it ideal for a wide range of applications. Whether you're designing high-speed networking equipment or advanced industrial controls, this CACHE SRAM device provides the value and efficiency you need to stay ahead of the competition. Trust IDT for cutting-edge solutions that deliver exceptional quality and performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, making it a reliable choice.

Surface Mount: YES

This feature allows for easy and secure installation onto circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to integrate this product into existing systems without taking up too much space.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures precise timing and coordination between various components, enhancing overall system efficiency.

Input/Output Type: COMMON

Having a common input/output type simplifies the design and implementation of connections, making the product user-friendly.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is commonly used in many electronic devices, ensuring compatibility and ease of integration.

Power Supplies (V): 3.3

With a consistent power supply of 3.3V, this product provides stable performance and reliability under various conditions.

No. of Terminals: 119

The ample number of terminals allows for versatile connectivity options, accommodating a wide range of system configurations.

Package Style (Meter): GRID ARRAY

The grid array package style offers secure connections and efficient heat dissipation, prolonging the lifespan of the product.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C enables this product to withstand harsh environmental conditions, ensuring reliable operation in various settings.

Technical Specifications

SRAM 71V35761S183BGGI attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

3.3 ns

Additional Features:

PIPELINED ARCHITECTURE

Maximum Clock Frequency (fCLK):

183 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B119

JESD-609 Code:

e1

Length:

22 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

119

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA119,7X17,50

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

2.36 mm

Maximum Standby Current:

.035 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

350 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1.27 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

71V35761S183BGGI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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