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IDT71024S15TYI8

Integrated Device Technology

IDT71024S15TYI8 by Integrated Device Technology

IDT71024S15TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 15ns and is suitable for industrial applications requiring fast and reliable memory storage in a small outline package. With parallel interface and common I/O type, it offers high performance in various electronic devices.

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Nova Conductors

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Aztec Data Supply Inc.

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AZTECH Wire

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Ampacity Inc.

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Component Stockers USA

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Continental Prestige Electronics

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Microchip USA

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Overview

Experience seamless performance and reliability with the IDT71024S15TYI8 by Integrated Device Technology, a leading manufacturer known for quality products. This SRAM device offers fast access times and 3-STATE output characteristics, making it ideal for a wide range of industrial applications. With a compact design and common input/output type, this memory IC provides customers with a valuable solution that ensures optimal functionality and efficiency. Upgrade your systems with the IDT71024S15TYI8 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the SRAM, ensuring it can withstand various environmental conditions.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this SRAM can perform reliably in demanding industrial settings.

Organization: 128KX8

With a 128KX8 organization, this SRAM offers a good balance between storage capacity and data retrieval speed.

Technology: CMOS

Utilizing CMOS technology, this SRAM provides low power consumption and high speed performance.

Minimum Supply Voltage (Vsup): 4.5 V

The low minimum supply voltage requirement makes this SRAM suitable for use in a variety of electronic devices.

Technical Specifications

SRAM IDT71024S15TYI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

15 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-J32

JESD-609 Code:

e0

Length:

20.96 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ32,.34

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.76 mm

Maximum Standby Current:

.01 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

155 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn85Pb15)

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.62 mm

Trade Compliance

IDT71024S15TYI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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