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SNJ54LS670W

Texas Instruments

SNJ54LS670W by Texas Instruments

SNJ54LS670W by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features a max clock frequency of 35MHz and offers an access time of 45ns. Ideal for military applications requiring fast and reliable memory storage in a compact flatpack package.

Median Price

$15.378

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 7 parts In-Stock

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$15.378

100+ parts

$16.147

1k+ parts

$15.224

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7

$15.378

$16.147

$15.224

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Mil-Aero Solutions, Inc.

USA . 3,196 parts In-Stock

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Vyrian

USA . 2,593 parts In-Stock

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Digiode

USA . 988 parts In-Stock

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Resion

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Corel Iberica Componentes, S.L.

Spain . 49 parts In-Stock

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Electronic Expediters

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Distributors (Availability)

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Parana Technologies

USA . 1,278 parts In-Stock

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$4.597

100+ parts

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$5.060

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1,278

$4.597

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$5.060

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DigiPath Technology Company

USA . 1,194 parts In-Stock

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$5.062

100+ parts

$4.657

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$5.062

$4.657

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ChromeModa Solutions

Germany . 2,939 parts In-Stock

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$5.165

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$4.235

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IDEA Electronic Components Group

UK . 1,727 parts In-Stock

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$4.648

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Ampacity Inc.

Singapore . 790 parts In-Stock

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$6.000

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$6.000

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One Stop Electronics

USA . 652 parts In-Stock

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$11.000

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$11.000

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AZTECH Wire

Italy . 767 parts In-Stock

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$14.676

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$14.676

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Corphita

USA . 1,195 parts In-Stock

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Microchip USA

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Assy Fe

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Overview

Experience unparalleled performance and reliability with the Texas Instruments SNJ54LS670W SRAM. Crafted with precision and quality by a trusted manufacturer, this product is perfect for a wide range of applications. Offering value and efficiency, the SNJ54LS670W provides customers with seamless operation, fast access times, and low standby current consumption. Upgrade your systems with this high-quality memory IC and enjoy the benefits of superior technology and performance.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides excellent durability and protection for the internal components, ensuring long-term reliability.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of the memory, providing flexibility and convenience in data access.

Maximum Clock Frequency (fCLK): 35 MHz

High clock frequency allows for fast data transfer and processing, making this product suitable for high-performance applications.

Technology: TTL

Uses TTL technology which is known for its reliability and low power consumption, making the memory efficient and dependable.

Memory Density: 16 bit

Offers a high memory density, allowing for storage of large amounts of data in a compact format.

Technical Specifications

SRAM SNJ54LS670W attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

45 ns

Maximum Clock Frequency (fCLK):

35 MHz

JESD-30 Code:

R-GDFP-F16

JESD-609 Code:

e0

Length:

10.3 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4X4

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DFP

Package Equivalence Code:

FL16,.3

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

2.03 mm

Maximum Standby Current:

.05 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

6.73 mm

Trade Compliance

SNJ54LS670W Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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