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SNJ5484AJ-00

Texas Instruments

SNJ5484AJ-00 by Texas Instruments

SNJ5484AJ-00 by Texas Instruments is a 16-bit SRAM with asynchronous operation, operating at 5V. It features a package style of IN-LINE and open-collector output characteristics. Ideal for military-grade applications requiring fast access times within the temperature range of -55 to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,119 parts In-Stock

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5,119

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Digiode

USA . 1,355 parts In-Stock

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1,355

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Distributors (Availability)

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Parana Technologies

USA . 1,028 parts In-Stock

1+ parts

$4.729

100+ parts

-

1k+ parts

$5.225

10k+ parts

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1,028

$4.729

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$5.225

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AZTECH Wire

Italy . 260 parts In-Stock

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$5.068

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260

$5.068

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ChromeModa Solutions

Germany . 879 parts In-Stock

1+ parts

$5.313

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$4.357

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879

$5.313

$4.357

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IDEA Electronic Components Group

UK . 193 parts In-Stock

1+ parts

$5.313

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$4.782

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193

$5.313

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$4.782

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One Stop Electronics

USA . 1,099 parts In-Stock

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$15.000

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1,099

$15.000

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Corphita

USA . 1,918 parts In-Stock

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1,918

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DigiPath Technology Company

USA . 1,029 parts In-Stock

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$4.790

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$4.790

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Overview

Upgrade your electronic devices with the high-quality SNJ5484AJ-00 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch performance and reliability. This SRAM memory module is perfect for military-grade applications where quick access time and efficient data storage are crucial. Trust Texas Instruments to provide the best value and benefits for all your memory needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material ensures durability and protection for the internal components of the SRAM, making it reliable and long-lasting.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster processing of data without being dependent on specific clock cycles, increasing efficiency.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures stable performance and compatibility with standard electrical systems.

Organization: 16X1

The 16X1 organization provides a balanced distribution of memory cells, enhancing data access and retrieval speed.

Technology: TTL

Utilizing TTL technology offers reliable signal transmission and noise immunity, ensuring accurate data processing.

Memory Density: 16 bit

With a memory density of 16 bits, this SRAM can store and access a moderate amount of data efficiently.

Maximum Access Time: 40 ns

The fast maximum access time of 40 ns enables quick data retrieval and processing, reducing latency in operations.

Technical Specifications

SRAM SNJ5484AJ-00 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-GDIP-T16

Length:

19.56 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X1

Output Characteristics:

OPEN-COLLECTOR

Output Enable:

NO

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

SNJ5484AJ-00 Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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