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SNJ5481AW

Texas Instruments

SNJ5481AW by Texas Instruments

The Texas Instruments SNJ5481AW is a 16x1 standard SRAM with asynchronous operation and open-collector output. It operates in a temperature range of -55°C to 125°C, making it suitable for military-grade applications requiring reliable memory storage in harsh environments. The package style is flatpack with 14 terminals on a rectangular ceramic body, designed for surface-mount installation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,629 parts In-Stock

1+ parts

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100+ parts

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8,629

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Digiode

USA . 3,520 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,520

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,410 parts In-Stock

1+ parts

$3.432

100+ parts

-

1k+ parts

$3.957

10k+ parts

-

1,410

$3.432

-

$3.957

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DigiPath Technology Company

USA . 2,128 parts In-Stock

1+ parts

$3.779

100+ parts

$3.477

1k+ parts

-

10k+ parts

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2,128

$3.779

$3.477

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IDEA Electronic Components Group

UK . 1,583 parts In-Stock

1+ parts

$3.856

100+ parts

-

1k+ parts

$3.470

10k+ parts

-

1,583

$3.856

-

$3.470

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ChromeModa Solutions

Germany . 286 parts In-Stock

1+ parts

$3.856

100+ parts

$3.162

1k+ parts

-

10k+ parts

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286

$3.856

$3.162

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AZTECH Wire

Italy . 742 parts In-Stock

1+ parts

$7.991

100+ parts

-

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742

$7.991

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One Stop Electronics

USA . 1,029 parts In-Stock

1+ parts

$13.000

100+ parts

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1,029

$13.000

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Corphita

USA . 3,701 parts In-Stock

1+ parts

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3,701

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Overview

Experience top-notch quality and reliability with the SNJ5481AW by Texas Instruments. As a leader in the industry, Texas Instruments ensures superior performance with this SRAM chip, making it ideal for military applications where durability is crucial. With its versatile design and advanced technology, this product offers unmatched value and benefits to customers looking for high-performance memory solutions. Trust Texas Instruments for your memory needs and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent protection for the internal components, making the product durable and reliable in harsh environments.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving design, making it suitable for compact electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient data access, enhancing the overall performance of the product.

Output Characteristics: OPEN-COLLECTOR

Open-collector output characteristics provide versatility in connecting to external components, enabling customization and compatibility with various systems.

Technology: TTL

TTL technology offers high-speed operation and low power consumption, making the product suitable for demanding applications where performance and efficiency are crucial.

Technical Specifications

SRAM SNJ5481AW attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDFP-F14

Memory IC Type:

Memory Width:

1

No. of Terminals:

14

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X1

Output Characteristics:

OPEN-COLLECTOR

Package Body Material:

CERAMIC

Package Code:

DFP

Package Equivalence Code:

FL14,.3

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

SRAMs

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SNJ5481AW Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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