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SNJ5481AW-10

Texas Instruments

SNJ5481AW-10 by Texas Instruments

SNJ5481AW-10 by Texas Instruments is a 16-bit standard SRAM with asynchronous operation, 40ns access time, and open-collector output. It is ideal for military applications due to its ceramic package, operating b/w -55°C to 125°C. This rectangular flatpack IC has 14 terminals and operates on a supply voltage range of 4.5V to 5.5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,266 parts In-Stock

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7,266

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Digiode

USA . 127 parts In-Stock

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127

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,983 parts In-Stock

1+ parts

$3.305

100+ parts

-

1k+ parts

$3.828

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1,983

$3.305

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$3.828

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DigiPath Technology Company

USA . 1,534 parts In-Stock

1+ parts

$3.640

100+ parts

$3.349

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-

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1,534

$3.640

$3.349

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ChromeModa Solutions

Germany . 3,497 parts In-Stock

1+ parts

$3.714

100+ parts

$3.045

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-

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3,497

$3.714

$3.045

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IDEA Electronic Components Group

UK . 205 parts In-Stock

1+ parts

$3.714

100+ parts

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$3.343

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205

$3.714

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$3.343

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AZTECH Wire

Italy . 364 parts In-Stock

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$16.912

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364

$16.912

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One Stop Electronics

USA . 635 parts In-Stock

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$27.000

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635

$27.000

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Corphita

USA . 2,637 parts In-Stock

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2,637

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Overview

Unlock unparalleled performance and reliability with the Texas Instruments SNJ5481AW-10 SRAM. Built with cutting-edge technology and a military-grade temperature grade, this memory IC offers lightning-fast access times and superior data retention. Ideal for a wide range of applications, this product is designed to exceed expectations in even the most demanding environments. Trust Texas Instruments to deliver quality and value with every component, ensuring your projects run smoothly and efficiently. Elevate your designs with the SNJ5481AW-10 and experience the difference that top-tier components can make.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material ensures durability and reliability, protecting the internal components from external factors.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with a wide range of devices and systems, making it versatile and easy to integrate.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this SRAM chip can perform reliably in demanding and high-temperature environments.

Technology: TTL

The TTL technology used in this SRAM chip ensures fast and reliable data processing, making it suitable for applications requiring high-speed performance.

Memory Density: 16 bit

With a memory density of 16 bits, this SRAM chip offers ample storage capacity for data-intensive applications, making it a great choice for memory-intensive tasks.

Technical Specifications

SRAM SNJ5481AW-10 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-GDFP-F14

Length:

9.21 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

14

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X1

Output Characteristics:

OPEN-COLLECTOR

Output Enable:

NO

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

6.29 mm

Trade Compliance

SNJ5481AW-10 Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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