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SNJ5481AJ-00

Texas Instruments

SNJ5481AJ-00 by Texas Instruments

SNJ5481AJ-00 by Texas Instruments is a 16-bit standard SRAM with asynchronous operation, 40ns access time, and open-collector output. It is ideal for military-grade applications requiring a memory density of 16x1 in a ceramic package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,995 parts In-Stock

1+ parts

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5,995

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Digiode

USA . 2,948 parts In-Stock

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2,948

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,278 parts In-Stock

1+ parts

$3.232

100+ parts

-

1k+ parts

$3.755

10k+ parts

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1,278

$3.232

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$3.755

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DigiPath Technology Company

USA . 2,177 parts In-Stock

1+ parts

$3.559

100+ parts

$3.275

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-

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2,177

$3.559

$3.275

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IDEA Electronic Components Group

UK . 2,345 parts In-Stock

1+ parts

$3.632

100+ parts

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$3.269

10k+ parts

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2,345

$3.632

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$3.269

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ChromeModa Solutions

Germany . 1,621 parts In-Stock

1+ parts

$3.632

100+ parts

$2.978

1k+ parts

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1,621

$3.632

$2.978

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One Stop Electronics

USA . 1,031 parts In-Stock

1+ parts

$7.000

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1,031

$7.000

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AZTECH Wire

Italy . 365 parts In-Stock

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$10.988

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365

$10.988

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Corphita

USA . 1,871 parts In-Stock

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1,871

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Overview

Enhance your electronic projects with the high-quality SNJ5481AJ-00 SRAM from Texas Instruments. Known for their reliability and innovation, Texas Instruments delivers cutting-edge solutions for a wide range of applications. This versatile memory IC offers superior performance, durability, and speed, making it the perfect choice for demanding military-grade projects. Upgrade your designs today with the SNJ5481AJ-00 and experience the difference TI products can make.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material ensures durability and protection for the internal components, making this product suitable for harsh environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for fast and efficient data transfers without the need for synchronized timing signals, making it a versatile choice for various applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without performance degradation, ensuring reliable operation in demanding conditions.

Technology: TTL

TTL technology provides high-speed and reliable data transmission, making this SRAM ideal for applications that require quick response times and efficient performance.

Memory IC Type: STANDARD SRAM

The use of standard SRAM memory IC ensures compatibility with a wide range of systems and devices, making it a versatile choice for various memory storage applications.

Technical Specifications

SRAM SNJ5481AJ-00 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-GDIP-T14

Length:

19.56 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

14

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X1

Output Characteristics:

OPEN-COLLECTOR

Output Enable:

NO

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

SNJ5481AJ-00 Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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