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SNJ5484AJ

Texas Instruments

SNJ5484AJ by Texas Instruments

SNJ5484AJ by Texas Instruments is a MILITARY-grade SRAM with 16X1 organization, ASYNCHRONOUS operation, and OPEN-COLLECTOR output. It operates b/w -55 to 125 °C and is ideal for applications requiring high reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,233 parts In-Stock

1+ parts

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4,233

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Digiode

USA . 3,906 parts In-Stock

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3,906

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 230 parts In-Stock

1+ parts

$5.056

100+ parts

-

1k+ parts

$5.622

10k+ parts

-

230

$5.056

-

$5.622

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DigiPath Technology Company

USA . 177 parts In-Stock

1+ parts

$5.567

100+ parts

-

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177

$5.567

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ChromeModa Solutions

Germany . 5,171 parts In-Stock

1+ parts

$5.681

100+ parts

$4.658

1k+ parts

-

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5,171

$5.681

$4.658

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IDEA Electronic Components Group

UK . 827 parts In-Stock

1+ parts

$5.681

100+ parts

-

1k+ parts

$5.113

10k+ parts

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827

$5.681

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$5.113

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AZTECH Wire

Italy . 783 parts In-Stock

1+ parts

$17.605

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783

$17.605

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One Stop Electronics

USA . 332 parts In-Stock

1+ parts

$24.000

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332

$24.000

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Corphita

USA . 824 parts In-Stock

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824

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Overview

Unleash the power of Texas Instruments with the SNJ5484AJ SRAM memory IC. Crafted from high-quality ceramic materials and designed for military-grade performance, this asynchronous memory chip offers reliable operation in extreme temperatures. Perfect for applications requiring fast parallel data processing, this 16x1 memory IC delivers open-collector output characteristics and through-hole terminal form. Trust Texas Instruments to provide cutting-edge technology that meets your demanding requirements with the SNJ5484AJ.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer excellent thermal stability and durability, making this SRAM suitable for operation in a wide range of temperatures and environments.

Screening Level: 38535Q/M;38534H;883B

The multiple screening levels indicate that this SRAM has undergone rigorous testing and quality control measures, ensuring reliability and consistency in performance.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to data, improving efficiency and speed in data retrieval and processing.

No. of Terminals: 16

The 16 terminals provide sufficient connectivity options for interfacing with other components or devices, enabling seamless integration into diverse electronic systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SRAM can function reliably in demanding environments without risk of overheating or performance degradation.

Output Characteristics: OPEN-COLLECTOR

Open-collector outputs allow for easy interfacing with external circuitry, providing versatility and compatibility with various system configurations.

Technology: TTL

TTL technology offers fast switching speeds and low power consumption, enhancing the overall performance and efficiency of this SRAM.

Technical Specifications

SRAM SNJ5484AJ attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T16

Memory IC Type:

Memory Width:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X1

Output Characteristics:

OPEN-COLLECTOR

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

SRAMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SNJ5484AJ Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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