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SNJ54170W

Texas Instruments

SNJ54170W by Texas Instruments

SNJ54170W by Texas Instruments is a 16-bit standard SRAM with 4x4 organization, operating at 5V. It features asynchronous operation, CMOS technology, and a flatpack package style suitable for military-grade applications. With a temperature range of -55 to 125°C, it is ideal for high-reliability systems requiring parallel memory access.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,331 parts In-Stock

1+ parts

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4,331

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Digiode

USA . 3,240 parts In-Stock

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3,240

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Electronic Expediters

USA . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 774 parts In-Stock

1+ parts

$5.099

100+ parts

-

1k+ parts

$5.681

10k+ parts

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774

$5.099

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$5.681

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DigiPath Technology Company

USA . 538 parts In-Stock

1+ parts

$5.614

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-

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538

$5.614

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ChromeModa Solutions

Germany . 6,056 parts In-Stock

1+ parts

$5.729

100+ parts

$4.698

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6,056

$5.729

$4.698

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IDEA Electronic Components Group

UK . 1,657 parts In-Stock

1+ parts

$5.729

100+ parts

-

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$5.156

10k+ parts

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1,657

$5.729

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$5.156

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One Stop Electronics

USA . 1,165 parts In-Stock

1+ parts

$18.000

100+ parts

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1,165

$18.000

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AZTECH Wire

Italy . 233 parts In-Stock

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$18.453

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233

$18.453

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Corphita

USA . 1,540 parts In-Stock

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1,540

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Overview

Unlock unparalleled performance and reliability with the Texas Instruments SNJ54170W SRAM. Crafted with precision using top-quality materials, this memory IC offers seamless operation in a wide range of applications. From aerospace to industrial control systems, this product guarantees enhanced functionality, stability, and efficiency. Trust Texas Instruments for cutting-edge technology that delivers unmatched value and benefits to your projects. Elevate your designs with the SNJ54170W and experience superior results like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination ensures durability and reliability, making the product suitable for harsh operating conditions.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in timing and communication, making it compatible with various systems and applications.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage ensures compatibility with most systems and simplifies integration.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product can withstand extreme conditions and maintain performance.

Technology: CMOS

CMOS technology offers low power consumption and high speed, enhancing overall efficiency and performance of the product.

Technical Specifications

SRAM SNJ54170W attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-CDFP-F16

Length:

10.2 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4X4

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Equivalence Code:

FL16,.3

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

2.03 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.73 mm

Trade Compliance

SNJ54170W Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

NSN

5962-01-014-8088, 5962010148088, 5962-01-193-5861, 5962011935861

NIIN

010148088, 011935861

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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