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SNJ54ALS218J

Texas Instruments

SNJ54ALS218J by Texas Instruments

SNJ54ALS218J by Texas Instruments is a 32x8 standard SRAM with TTL technology. It operates in asynchronous mode, has 20 terminals, and offers 3-STATE output characteristics. Ideal for military applications, it has a temperature range of -55 to 125°C and features a ceramic package body material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,233 parts In-Stock

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Digiode

USA . 3,312 parts In-Stock

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3,312

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Distributors (Availability)

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Parana Technologies

USA . 579 parts In-Stock

1+ parts

$3.038

100+ parts

$282.167

1k+ parts

$2.735

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579

$3.038

$282.167

$2.735

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DigiPath Technology Company

USA . 1,305 parts In-Stock

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$3.346

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$3.346

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IDEA Electronic Components Group

UK . 1,542 parts In-Stock

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$3.414

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$3.073

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1,542

$3.414

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$3.073

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ChromeModa Solutions

Germany . 179 parts In-Stock

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$3.414

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$2.799

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179

$3.414

$2.799

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AZTECH Wire

Italy . 623 parts In-Stock

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$9.584

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623

$9.584

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One Stop Electronics

USA . 1,547 parts In-Stock

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$14.000

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Corphita

USA . 3,549 parts In-Stock

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Overview

Elevate your projects with the Texas Instruments SNJ54ALS218J, a top-of-the-line SRAM that delivers unparalleled quality and performance. With a reputation for excellence, Texas Instruments guarantees reliability and innovation in every product they create. The SNJ54ALS218J is perfect for a wide range of applications, offering customers unmatched value and benefits. Upgrade your designs today with this high-quality, military-grade SRAM from Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packaging provides excellent durability and resistance to high temperatures, making this SRAM suitable for robust applications.

Screening Level: 38535Q/M;38534H;883B

High screening levels ensure reliability and quality control, making this SRAM a reliable choice for critical applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into circuit boards and compact designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible data access and processing, making this SRAM versatile for various applications.

No. of Terminals: 20

Having 20 terminals provides sufficient connectivity options for interfacing with other components and peripherals.

Package Style (Meter): IN-LINE

In-Line package style ensures easy mounting and soldering onto the circuit board, simplifying the assembly process.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SRAM can withstand harsh environmental conditions without compromising performance.

Organization: 32X8

The organization of 32 words by 8 memory width allows for efficient data storage and retrieval, enhancing overall system performance.

Output Characteristics: 3-STATE

3-STATE output characteristics enable tristate logic functionality, providing flexibility in controlling the data flow and reducing power consumption.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this SRAM can function reliably in extreme cold environments.

Terminal Position: DUAL

Dual terminal position offers redundancy and improved electrical contact reliability, ensuring stable connectivity throughout the product's lifespan.

Temperature Grade: MILITARY

Military-grade temperature tolerance ensures optimal performance in rugged environments and critical applications.

Technology: TTL

TTL technology provides fast response times and low power consumption, making this SRAM suitable for high-speed applications.

Parallel or Serial: PARALLEL

Parallel data transfer allows for simultaneous processing of multiple bits, resulting in faster data access and improved system throughput.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables secure and reliable connections to the circuit board, reducing the risk of disconnections or signal interference.

No. of Words: 32 words

Having 32 words of memory capacity offers ample storage space for data-intensive applications, ensuring optimal functionality and performance.

Memory Width: 8

An 8-bit memory width facilitates efficient data handling and processing, enabling seamless integration with other components in the system.

Terminal Pitch: 2.54 mm

With a terminal pitch of 2.54 mm, this SRAM allows for easy integration and compatibility with standard socket interfaces and PCB layouts.

No. of Words Code: 32

32-word code provides clear identification and addressing for data storage and retrieval, enhancing system manageability and scalability.

Memory IC Type: STANDARD SRAM

Being a standard SRAM, this memory IC is widely compatible and easily interchangeable, making it a versatile choice for diverse applications.

Technical Specifications

SRAM SNJ54ALS218J attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T20

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

32 words

No. of Words Code:

32

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

SRAMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SNJ54ALS218J Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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