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SNJ54170J

Texas Instruments

SNJ54170J by Texas Instruments

SNJ54170J by Texas Instruments is a 16-bit standard SRAM with CMOS technology. It operates asynchronously at a nominal voltage of 5V, suitable for military-grade applications. With a memory width of 4 words and organization in a 4x4 configuration, it offers reliable performance in harsh environments up to 125°C.

Median Price

$36.690

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$36.690

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Vyrian

USA . 8,585 parts In-Stock

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Digiode

USA . 3,554 parts In-Stock

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Electronic Expediters

USA . 8 parts In-Stock

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Q Components

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Prism Electronics

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Distributors (Availability)

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Parana Technologies

USA . 1,338 parts In-Stock

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$3.976

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$4.445

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DigiPath Technology Company

USA . 1,862 parts In-Stock

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$4.378

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$4.027

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ChromeModa Solutions

Germany . 5,012 parts In-Stock

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$4.467

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$3.663

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$4.467

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IDEA Electronic Components Group

UK . 1,330 parts In-Stock

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$4.467

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$4.020

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AZTECH Wire

Italy . 236 parts In-Stock

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$13.569

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One Stop Electronics

USA . 278 parts In-Stock

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$14.000

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Authorized Procurement Solutions

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Corphita

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Kepictronics

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Perfect Parts

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Overview

Enhance your electronic projects with the SNJ54170J by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge SRAM technology that guarantees superior performance and efficiency. This versatile memory IC offers 16-bit memory density, perfect for a wide range of applications. From industrial automation to telecommunications systems, the SNJ54170J provides customers with exceptional value, seamless integration, and unmatched benefits. Upgrade your designs today with the trusted brand of Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material choice provides durability and reliability for the product, making it suitable for use in rugged environments.

Screening Level: 38535Q/M;38534H;883B

The high screening level ensures that the product meets stringent military standards for quality and reliability.

Nominal Supply Voltage / Vsup (V): 5

Operating at a stable voltage of 5V ensures consistent performance and reliability.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster access times and efficient data retrieval.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand extreme conditions without performance degradation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Memory Density: 16 bit

With a high memory density of 16 bits, this product can store a large amount of data efficiently.

Technical Specifications

SRAM SNJ54170J attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-CDIP-T16

Length:

19.56 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4X4

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SNJ54170J Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

NSN

5962-01-096-2758, 5962010962758, 5962-01-155-4860, 5962011554860, 5962-01-193-8497, 5962011938497

NIIN

010962758, 011554860, 011938497

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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