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SNJ5481AJ

Texas Instruments

SNJ5481AJ by Texas Instruments

SNJ5481AJ by Texas Instruments is a 16X1 SRAM with TTL technology. It operates in asynchronous mode, has open-collector output, and can withstand temperatures from -55 to 125°C. Ideal for military-grade applications requiring reliable parallel memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,431 parts In-Stock

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Digiode

USA . 3,396 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,481 parts In-Stock

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$3.000

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1,481

$3.000

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Parana Technologies

USA . 1,567 parts In-Stock

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$4.242

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$4.676

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1,567

$4.242

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$4.676

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ChromeModa Solutions

Germany . 4,205 parts In-Stock

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$4.766

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$3.908

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$4.766

$3.908

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IDEA Electronic Components Group

UK . 1,657 parts In-Stock

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$4.766

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$4.289

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1,657

$4.766

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$4.289

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AZTECH Wire

Italy . 574 parts In-Stock

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$7.213

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574

$7.213

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Corphita

USA . 4,442 parts In-Stock

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DigiPath Technology Company

USA . 1,569 parts In-Stock

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$4.297

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Overview

Discover the Texas Instruments SNJ5481AJ, a top-of-the-line SRAM that delivers unparalleled quality and reliability. With a MILITARY grade temperature range and CERAMIC package material, this product ensures optimal performance in even the most demanding environments. Ideal for applications that require high-speed data storage, this TTL technology-based IC offers customers the perfect balance of value and performance. Trust Texas Instruments to provide you with the best-in-class solutions for your memory needs.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic material provides durability and heat resistance, making the SRAM suitable for high temperature environments.

Screening Level: 38535Q/M;38534H;883B

The multiple screening levels ensure high reliability and quality control in manufacturing, making this SRAM a dependable choice.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space and easy integration into electronic circuits.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode enables fast and efficient data processing without requiring a clock signal, improving overall performance.

No. of Terminals: 14

The 14 terminals provide sufficient connectivity for interfacing with other components, making the SRAM versatile in various applications.

Package Style (Meter): IN-LINE

The in-line package style simplifies the installation and maintenance of the SRAM in electronic systems, enhancing usability.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the SRAM to function reliably in demanding thermal conditions, expanding its applicability.

Organization: 16X1

The 16X1 organization enables efficient storage and retrieval of data in a parallel manner, enhancing data processing speed and efficiency.

Output Characteristics: OPEN-COLLECTOR

The open-collector output characteristics allow for versatile interfacing with different types of circuits, increasing compatibility.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the SRAM can function reliably in cold environments, making it suitable for a wide range of applications.

Terminal Position: DUAL

The dual terminal position provides redundancy and flexibility in connecting the SRAM to other components, enhancing reliability.

Temperature Grade: MILITARY

The military temperature grade indicates the SRAM's resilience in harsh environmental conditions, making it an excellent choice for rugged applications.

Technology: TTL

The TTL technology offers high-speed data processing and low power consumption, contributing to the efficiency and performance of the SRAM.

Parallel or Serial: PARALLEL

The parallel data transfer mode enables the SRAM to handle multiple bits of data simultaneously, improving overall throughput and speed.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the assembly and soldering process, ensuring secure connections for stable operation.

No. of Words: 16 words

With the capacity to store 16 words of data, the SRAM can handle a significant amount of information at once, suitable for large-scale applications.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch allows for easy integration and connection with standard electronic components, facilitating compatibility.

No. of Words Code: 16

Having a 16-word code allows for precise addressing of data within the SRAM, ensuring accurate retrieval and storage of information.

Memory IC Type: STANDARD SRAM

The standard SRAM type provides reliable and consistent performance in data storage and retrieval, making this product a trusted choice in memory solutions.

Technical Specifications

SRAM SNJ5481AJ attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T14

Memory IC Type:

Memory Width:

1

No. of Terminals:

14

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X1

Output Characteristics:

OPEN-COLLECTOR

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

SRAMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SNJ5481AJ Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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