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SNJ54ALS217FH

Texas Instruments

SNJ54ALS217FH by Texas Instruments

SNJ54ALS217FH by Texas Instruments is a 64x4 standard SRAM chip with 3-STATE output, operating in asynchronous mode. It features a temperature range of -55°C to 125°C and comes in a ceramic square chip carrier package. Ideal for military applications requiring reliable parallel memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,397 parts In-Stock

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6,397

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Digiode

USA . 2,615 parts In-Stock

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2,615

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Distributors (Availability)

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Parana Technologies

USA . 1,964 parts In-Stock

1+ parts

$4.118

100+ parts

-

1k+ parts

$4.571

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1,964

$4.118

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$4.571

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DigiPath Technology Company

USA . 1,122 parts In-Stock

1+ parts

$4.534

100+ parts

$4.172

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1,122

$4.534

$4.172

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ChromeModa Solutions

Germany . 6,666 parts In-Stock

1+ parts

$4.627

100+ parts

$3.794

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6,666

$4.627

$3.794

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IDEA Electronic Components Group

UK . 2,195 parts In-Stock

1+ parts

$4.627

100+ parts

-

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$4.164

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2,195

$4.627

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$4.164

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One Stop Electronics

USA . 469 parts In-Stock

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$7.000

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469

$7.000

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AZTECH Wire

Italy . 318 parts In-Stock

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$17.973

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318

$17.973

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Corphita

USA . 2,802 parts In-Stock

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2,802

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Overview

Elevate your projects with the SNJ54ALS217FH by Texas Instruments, a top-tier manufacturer renowned for excellence in the semiconductor industry. This cutting-edge SRAM chip offers reliability and performance like no other, making it ideal for a wide range of applications. Whether you're working on aerospace, defense, or industrial projects, this chip ensures seamless operation and enhanced efficiency. Trust Texas Instruments to deliver quality products that exceed expectations and elevate your designs to new heights. Choose the SNJ54ALS217FH for unparalleled value and unbeatable advantages in your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packaging provides excellent durability and stability, making this product suitable for harsh environmental conditions.

Surface Mount: YES

Surface mount technology allows for easier and more efficient assembly on circuit boards, saving time and effort during production.

Screening Level: 38535Q/M;38534H;883B

This product meets high screening standards, ensuring reliability and performance in critical applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and flexible read and write access, enhancing overall system efficiency.

No. of Terminals: 20

The higher number of terminals provides greater connectivity and compatibility with various systems and devices.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand elevated thermal conditions without compromising functionality.

Organization: 64X4

The 64x4 organization offers a balance between capacity and access speed, making it suitable for a wide range of memory-intensive applications.

Output Characteristics: 3-STATE

3-state output allows for tristate logic, enabling multiple devices to share the same bus line without interference, enhancing system design flexibility.

Technology: TTL

TTL technology offers fast and reliable data processing capabilities, ideal for high-speed applications that require quick response times.

Memory Width: 4

A memory width of 4 provides efficient data storage and retrieval, essential for handling complex and large datasets.

Technical Specifications

SRAM SNJ54ALS217FH attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N20

Memory IC Type:

Memory Width:

4

No. of Terminals:

20

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64X4

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

SRAMs

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SNJ54ALS217FH Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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