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SNJ54170W-00

Texas Instruments

SNJ54170W-00 by Texas Instruments

SNJ54170W-00 by Texas Instruments is a 16-bit SRAM with 40ns access time, operating at 5V. It features open-collector outputs and operates in asynchronous mode. Ideal for military-grade applications due to its ceramic package and wide temperature range from -55°C to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,307 parts In-Stock

1+ parts

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8,307

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Digiode

USA . 4,930 parts In-Stock

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4,930

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,750 parts In-Stock

1+ parts

$2.835

100+ parts

-

1k+ parts

$3.323

10k+ parts

-

1,750

$2.835

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$3.323

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DigiPath Technology Company

USA . 2,331 parts In-Stock

1+ parts

$3.121

100+ parts

$2.872

1k+ parts

-

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2,331

$3.121

$2.872

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ChromeModa Solutions

Germany . 1,245 parts In-Stock

1+ parts

$3.185

100+ parts

$2.612

1k+ parts

-

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1,245

$3.185

$2.612

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IDEA Electronic Components Group

UK . 387 parts In-Stock

1+ parts

$3.185

100+ parts

-

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$2.866

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387

$3.185

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$2.866

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AZTECH Wire

Italy . 362 parts In-Stock

1+ parts

$15.645

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362

$15.645

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One Stop Electronics

USA . 1,028 parts In-Stock

1+ parts

$16.000

100+ parts

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1,028

$16.000

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Corphita

USA . 665 parts In-Stock

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665

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Overview

Enhance your electronic projects with the top-tier quality and reliability of the Texas Instruments SNJ54170W-00 SRAM. Crafted by a renowned manufacturer, this ceramic, glass-sealed memory module offers unparalleled performance in various applications. With its asynchronous operation and open-collector output characteristics, this military-grade memory IC provides exceptional value and benefits to customers seeking high-speed data storage solutions. Elevate your projects with the cutting-edge technology and superior design of this 16-bit memory module today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed package body material provides durability and protection for the internal components, ensuring reliability in harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V allows for compatibility with a wide range of systems and power sources.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this SRAM can perform reliably in demanding industrial and military applications.

No. of Words: 4 words

Having 4 words allows for efficient storage and retrieval of data in parallel, increasing overall performance.

Technology: TTL

Utilizing TTL technology ensures fast and reliable operation, making this SRAM suitable for high-speed applications.

Technical Specifications

SRAM SNJ54170W-00 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-GDFP-F16

Length:

10.2 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4X4

Output Characteristics:

OPEN-COLLECTOR

Output Enable:

NO

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

6.73 mm

Trade Compliance

SNJ54170W-00 Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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