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SNJ5484AW-00

Texas Instruments

SNJ5484AW-00 by Texas Instruments

SNJ5484AW-00 by Texas Instruments is a 16-bit SRAM with 40ns access time, operating at 5V. It features open-collector outputs and operates in asynchronous mode. Ideal for military applications requiring fast and reliable memory storage in a compact flatpack package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,707 parts In-Stock

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2,707

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Vyrian

USA . 2,463 parts In-Stock

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2,463

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 825 parts In-Stock

1+ parts

$2.723

100+ parts

-

1k+ parts

$3.206

10k+ parts

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825

$2.723

-

$3.206

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DigiPath Technology Company

USA . 131 parts In-Stock

1+ parts

$2.999

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-

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131

$2.999

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IDEA Electronic Components Group

UK . 2,196 parts In-Stock

1+ parts

$3.060

100+ parts

-

1k+ parts

$2.754

10k+ parts

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2,196

$3.060

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$2.754

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ChromeModa Solutions

Germany . 559 parts In-Stock

1+ parts

$3.060

100+ parts

$2.509

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559

$3.060

$2.509

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One Stop Electronics

USA . 1,399 parts In-Stock

1+ parts

$5.000

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1,399

$5.000

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AZTECH Wire

Italy . 447 parts In-Stock

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$18.564

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447

$18.564

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Corphita

USA . 2,773 parts In-Stock

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Overview

Elevate your electronics with the SNJ5484AW-00 by Texas Instruments, a top-of-the-line SRAM memory IC that offers unparalleled quality and performance. Designed with precision and expertise, this ceramic, glass-sealed package boasts a wide range of applications, making it a versatile choice for any project. With a nominal supply voltage of 5V, operating mode set to asynchronous, and military-grade temperature grade, this product delivers reliability and efficiency like no other. Experience the value and benefits of cutting-edge technology with the SNJ5484AW-00 — the perfect solution for all your memory needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed materials ensures durability and protection for the internals of the SRAM, making it reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate into various systems.

Technology: TTL

Utilizing TTL technology offers high-speed and reliable performance, ideal for applications where speed and accuracy are crucial.

Memory IC Type: STANDARD SRAM

Being a standard SRAM memory IC indicates compatibility with a wide range of systems and ease of integration, making it a versatile choice for different applications.

Maximum Access Time: 40 ns

With a maximum access time of 40 nanoseconds, this SRAM offers quick data retrieval and processing, making it suitable for tasks that require fast response times.

Technical Specifications

SRAM SNJ5484AW-00 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-GDFP-F16

Length:

10.2 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X1

Output Characteristics:

OPEN-COLLECTOR

Output Enable:

NO

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

6.73 mm

Trade Compliance

SNJ5484AW-00 Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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