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SNJ54ALS217J

Texas Instruments

SNJ54ALS217J by Texas Instruments

SNJ54ALS217J by Texas Instruments is a 64x4 standard SRAM with 3-STATE output, operating in asynchronous mode. It has a temperature range of -55 to 125°C and comes in a ceramic package with 20 terminals. Ideal for military-grade applications requiring fast parallel memory access.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,622 parts In-Stock

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7,622

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Digiode

USA . 3,065 parts In-Stock

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3,065

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,433 parts In-Stock

1+ parts

$4.955

100+ parts

-

1k+ parts

$5.494

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1,433

$4.955

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$5.494

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DigiPath Technology Company

USA . 1,110 parts In-Stock

1+ parts

$5.456

100+ parts

$5.019

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1,110

$5.456

$5.019

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IDEA Electronic Components Group

UK . 884 parts In-Stock

1+ parts

$5.567

100+ parts

-

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$5.010

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884

$5.567

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$5.010

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ChromeModa Solutions

Germany . 687 parts In-Stock

1+ parts

$5.567

100+ parts

$4.565

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-

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687

$5.567

$4.565

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One Stop Electronics

USA . 1,237 parts In-Stock

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$7.000

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1,237

$7.000

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AZTECH Wire

Italy . 732 parts In-Stock

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$16.215

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732

$16.215

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Corphita

USA . 4,800 parts In-Stock

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4,800

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Overview

Elevate your electronics with the SNJ54ALS217J by Texas Instruments. As a top-tier manufacturer of quality components, Texas Instruments delivers unmatched reliability and performance. This SRAM device is perfect for a wide range of applications, offering seamless integration and efficient operation. Experience the value and benefits of this product, designed to enhance your projects with its advanced technology and innovative features. Trust Texas Instruments to provide you with the tools you need to succeed in the ever-evolving world of technology.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides high thermal conductivity and electrical insulation, making it suitable for high-performance applications.

Screening Level: 38535Q/M;38534H;883B

Compliance with multiple screening levels ensures reliability and quality of the product, making it suitable for mission-critical systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to memory locations, providing faster data access and improved performance.

No. of Terminals: 20

Having 20 terminals allows for efficient connection to external devices and systems, enhancing versatility and compatibility.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance of 125°C ensures reliability in harsh environments and under heavy workloads.

Technology: TTL

Using TTL technology results in fast operation, low power consumption, and compatibility with a wide range of systems, making it a reliable choice for various applications.

Technical Specifications

SRAM SNJ54ALS217J attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T20

Memory IC Type:

Memory Width:

4

No. of Terminals:

20

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64X4

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

SRAMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SNJ54ALS217J Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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