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MT45W8MW16BGX-708WTTR

Micron Technology

MT45W8MW16BGX-708WTTR by Micron Technology

Micron Technology's MT45W8MW16BGX-708WTTR is a 8MX16 SRAM with 134217728 bit memory density. Operating at 1.8V, it offers a max access time of 70ns and features a parallel interface. Ideal for applications requiring fast and reliable data storage in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,290 parts In-Stock

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5,290

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Chip Stock

USA . 5,200 parts In-Stock

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5,200

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Digiode

USA . 103 parts In-Stock

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103

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,512 parts In-Stock

1+ parts

$18.000

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1,512

$18.000

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AZTECH Wire

Italy . 122 parts In-Stock

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$18.500

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Corphita

USA . 2,035 parts In-Stock

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2,035

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Aranea Global

USA . 1,000 parts In-Stock

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Microchip USA

USA . 154 parts In-Stock

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Overview

Unleash the power of Micron Technology with the MT45W8MW16BGX-708WTTR SRAM memory chip. Boasting top-notch quality and reliability, this memory device is perfect for a variety of applications. With a package body material made of durable plastic/epoxy, this chip offers exceptional performance in a compact design. Experience lightning-fast speeds and seamless operation with its asynchronous operating mode. Trust Micron Technology to deliver cutting-edge memory solutions that exceed expectations. Elevate your projects with the MT45W8MW16BGX-708WTTR and enjoy unparalleled value and benefits like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving on PCBs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and simplified control in data transfer.

Nominal Supply Voltage / Vsup (V): 1.8

Operates efficiently at a low voltage, making it energy-efficient.

No. of Terminals: 54

Having 54 terminals allows for multiple connection options and greater functionality.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures, ensuring reliable performance in various environments.

Organization: 8MX16

Organized as 8 Megabytes by 16 bits, providing ample storage capacity and data width for diverse applications.

Technology: CMOS

Uses CMOS technology for low power consumption and high speed operation.

Parallel or Serial: PARALLEL

Operates in parallel mode for fast data transfer and processing.

Memory IC Type: PSEUDO STATIC RAM

Utilizes Pseudo Static RAM technology for high-speed access and data retention.

Technical Specifications

SRAM MT45W8MW16BGX-708WTTR attributes and parameters. Explore more SRAM devices from Micron Technology

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PBGA-B54

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MT45W8MW16BGX-708WTTR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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