Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.
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71V35761S183BGI8
Integrated Device Technology
71V35761S183BGI8 by Integrated Device Technology is a CACHE SRAM with 128KX36 organization, operating at 183 MHz clock frequency. It has a max access time of 3.3 ns and is suitable for industrial applications requiring fast synchronous memory solutions.
3.3 ns
PIPELINED ARCHITECTURE
183 MHz
COMMON
R-PBGA-B119
e0
22 mm
4718592 bit
CACHE SRAM
36
3
1
119
131072 words
128K
SYNCHRONOUS
85 Cel
-40 Cel
128KX36
3-STATE
PLASTIC/EPOXY
BGA
BGA119,7X17,50
RECTANGULAR
GRID ARRAY
PARALLEL
225
3.3
Not Qualified
2.36 mm
.035 Amp
3.14 V
SRAMs
350 mA
3.465 V
3.135 V
YES
CMOS
INDUSTRIAL
TIN LEAD
BALL
1.27 mm
BOTTOM
20
14 mm
CY22E016L-SZ45XC
Cypress Semiconductor
CY22E016L-SZ45XC by Cypress Semiconductor is a 2Kx8 SRAM with 16384-bit memory density. Operating at 5V, it has an access time of 45ns and is ideal for commercial applications requiring non-volatile memory solutions. The package style is small outline, with Gull Wing terminals and a temperature range of 0-70°C.
45 ns
R-PDSO-G28
e4
17.905 mm
16384 bit
NON-VOLATILE SRAM
8
28
2048 words
2K
ASYNCHRONOUS
70 Cel
0 Cel
2KX8
SOP
SMALL OUTLINE
260
2.67 mm
5.5 V
4.5 V
5
COMMERCIAL
NICKEL PALLADIUM GOLD
GULL WING
DUAL
7.505 mm
CY7C1059DV33-12ZSXI
CY7C1059DV33-12ZSXI by Cypress Semiconductor is a 1MX8 SRAM with 3.3V supply, 12ns access time, and 85°C max temp. Ideal for industrial applications requiring fast, common I/O asynchronous memory in a small outline package.
12 ns
R-PDSO-G44
e3
18.415 mm
8388608 bit
STANDARD SRAM
44
1048576 words
1M
1MX8
TSOP2
TSOP44,.46,32
SMALL OUTLINE, THIN PROFILE
1.194 mm
.02 Amp
2 V
100 mA
3.6 V
3 V
MATTE TIN
.8 mm
40
10.16 mm
7130LA25JI8
7130LA25JI8 by Integrated Device Technology is a 1KX8 MULTI-PORT SRAM with 25 ns access time, operating at 5V. It features a 3-STATE output and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in electronic devices.
25 ns
S-PQCC-J52
19.1262 mm
8192 bit
MULTI-PORT SRAM
2
52
1024 words
1K
1KX8
QCCJ
LDCC52,.8SQ
SQUARE
CHIP CARRIER
4.572 mm
.004 Amp
220 mA
J BEND
QUAD
7132LA25JI8
7132LA25JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a chip carrier package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in electronic devices.
AS7C31026C-12BIN
Alliance Memory
Alliance Memory's AS7C31026C-12BIN is a 64Kx16 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and operates in asynchronous mode. With parallel interface and 1048576-bit memory density, it offers fast performance in compact designs.
R-PBGA-B48
e3/e6
8 mm
1048576 bit
16
48
65536 words
64K
64KX16
LFBGA
GRID ARRAY, LOW PROFILE, FINE PITCH
1.34 mm
.75 mm
6 mm
LH5116-10F
Sharp Corporation
The Sharp LH5116-10F is a 2Kx8 SRAM with 16384-bit memory density. Operating at 5V, it offers a max access time of 100ns. Ideal for commercial applications, this CMOS technology-based IC has a rectangular package shape and operates in asynchronous mode.
100 ns
R-PDIP-T24
31 mm
24
DIP
IN-LINE
NOT SPECIFIED
5.3 mm
NO
THROUGH-HOLE
2.54 mm
15.24 mm
M48Z512BV-85PM1
STMicroelectronics
M48Z512BV-85PM1 by STMicroelectronics is a 512Kx8 non-volatile SRAM module with asynchronous operation and a max access time of 85 ns. It operates at 3.3V, supports dual terminals, and functions effectively in commercial applications up to 70 °C. Ideal for data storage in embedded systems.
85 ns
R-PDMA-P32
4194304 bit
NON-VOLATILE SRAM MODULE
32
524288 words
512K
512KX8
DIP32,.6
MICROELECTRONIC ASSEMBLY
.003 Amp
50 mA
PIN/PEG
CY7C1470BV25-200BZI
ZBT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B165;
3 ns
200 MHz
R-PBGA-B165
17 mm
75497472 bit
ZBT SRAM
165
2097152 words
2M
2MX36
LBGA
BGA165,11X15,40
GRID ARRAY, LOW PROFILE
2.5
1.4 mm
2.38 V
450 mA
2.625 V
2.375 V
1 mm
15 mm
74HC670D,653
NXP Semiconductors
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 4 words;
59 ns
R-PDSO-G16
9.9 mm
16 bit
4
4 words
125 Cel
4X4
1.75 mm
6 V
AUTOMOTIVE
Nickel/Palladium/Gold (Ni/Pd/Au)
30
3.9 mm
74HC670DB,112
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SSOP; Package Shape: RECTANGULAR; Power Supplies (V): 2/6;
6.2 mm
SSOP
SSOP16,.3
SMALL OUTLINE, SHRINK PITCH
2/6
2 mm
Other Memory ICs
.65 mm
74HC670DB,118
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SSOP; Package Shape: RECTANGULAR; Length: 6.2 mm;
74HC670N,652
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;
R-PDIP-T16
21.6 mm
DIP16,.3
4.7 mm
7.62 mm
74HCT670D,652
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Access Time: 60 ns;
60 ns
SOP16,.25
74HCT670D,653
STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
PCF8570P/F5,112
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e4;
2-WIRE I2C SERIAL INTERFACE
.1 MHz
R-PDIP-T8
9.5 mm
2048 bit
256 words
256
256X8
OPEN-DRAIN
DIP8,.3
SERIAL
3/5
4.2 mm
.0000004 Amp
1 V
.2 mA
2.5 V
PCF8570T/F5,512
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Power Supplies (V): 3/5;
3400 ns
R-PDSO-G8
7.55 mm
SOP8,.4
2.65 mm
7.5 mm
PCF8570T/F5,518
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Technology: CMOS;
IS62WV1288BLL-55HLI-TR
Integrated Silicon Solution
IS62WV1288BLL-55HLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time. Operating at 3V, it's ideal for industrial applications requiring fast and reliable memory storage. With a compact size of 11.8mm x 8mm and low power consumption, it's suitable for various embedded systems.
55 ns
R-PDSO-G32
11.8 mm
128KX8
TSOP1
1.25 mm
.5 mm
IS62WV1288BLL-55QLI-TR
IS62WV1288BLL-55QLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.6V max supply voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and 1048576-bit memory density, it offers fast data retrieval for various electronic devices.
20.445 mm
3 mm
11.305 mm
IS62WV1288BLL-55TLI-TR
IS62WV1288BLL-55TLI-TR by Integrated Silicon Solution is a 128KX8 SRAM with 55 ns access time, operating at 3.6 V max voltage. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With 131072 words and memory density of 1048576 bits, this CMOS technology-based SRAM offers reliable parallel data storage solutions.
18.4 mm
1.2 mm
MT45W2MW16PGA-70ITTR
Micron Technology
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;
70 ns
e1
33554432 bit
PSEUDO STATIC RAM
2MX16
VFBGA
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
1.95 V
1.7 V
TIN SILVER COPPER
MT45W4MW16BCGB-701ITTR
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;
R-PBGA-B54
67108864 bit
54
4194304 words
4M
4MX16
1.8
Tin/Silver/Copper (Sn/Ag/Cu)
MT45W4MW16BCGB-708WTTR
PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;
-30 Cel
OTHER
MT45W8MW16BGX-708WTTR
Micron Technology's MT45W8MW16BGX-708WTTR is a 8MX16 SRAM with 134217728 bit memory density. Operating at 1.8V, it offers a max access time of 70ns and features a parallel interface. Ideal for applications requiring fast and reliable data storage in compact electronic devices.
10 mm
134217728 bit
8388608 words
8M
8MX16
N01L63W2AT25I
Onsemi
N01L63W2AT25I by Onsemi is a 64KX16 SRAM with 3V nominal voltage, operating in industrial temperature range. It features 70ns max access time, 3-STATE output characteristics, and common input/output type. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
18.41 mm
LSSOP
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
3/3.3
.00001 Amp
1.8 V
14 mA
2.3 V
N04L63W2AB27I
N04L63W2AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.
262144 words
256K
256KX16
BGA48,6X8,30
16 mA
N04L63W2AT27IT
N04L63W2AT27IT by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast access time and low standby current.
N04L63W2AT27I
N04L63W2AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.
N25S818HAS21I
N25S818HAS21I by Onsemi is a 32Kx8 SRAM with 16MHz clock frequency, operating at -40 to 85°C. It features separate I/O, 1.8V supply voltage, and 3-STATE output. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.
16 MHz
SEPARATE
4.9 mm
262144 bit
1, (3 LINE)
32768 words
32K
32KX8
SOP8,.25
.0000005 Amp
10 mA
3.91 mm
N25S818HAT21I
N25S818HAT21I by Onsemi is a 32KX8 SRAM with 1.8V supply, operating at -40 to 85 °C. It features synchronous mode, 16 MHz clock frequency, and 0.65mm terminal pitch. Ideal for industrial applications requiring high-speed memory with low power consumption.
4.4 mm
TSSOP
TSSOP8,.25
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
1.1 mm
N01L83W2AN25I
N01L83W2AN25I by Onsemi is a 128Kx8 SRAM with 3.6V max supply voltage, operating at -40 to 85 °C. It features a small outline package, 0.5mm terminal pitch, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact spaces.
TSSOP32,.56,20
N01L83W2AT25I
N01L83W2AT25I by Onsemi is a 128Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current, it's ideal for high-speed memory requirements.
TSSOP32,.8,20
N02L63W3AB25IT
Onsemi's N02L63W3AB25IT is a 128KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a low profile grid array package suitable for industrial applications, offering fast access time of 70ns and memory density of 2097152 bits.
2097152 bit
128KX16
2.5/3.3
N02L63W3AB25I
N02L63W3AB25I by Onsemi is a 128Kx16 SRAM with 70ns access time, operating at 2.5/3.3V. It features a low profile grid array package and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.
N02L63W3AT25IT
N02L63W3AT25IT by Onsemi is a 128KX16 SRAM with 131072 words, operating at 2.5/3.3V. It features a small outline package, -40 to 85 °C temperature range, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.
N64S830HAS22I
N64S830HAS22I by Onsemi is an 8KX8 SRAM with 3-STATE output, operating at 20 MHz clock frequency. It has a memory density of 65536 bit and operates at industrial temperature grade. Ideal for applications requiring fast synchronous memory access in compact designs.
20 MHz
65536 bit
8192 words
8K
8KX8
.000004 Amp
N64S830HAT22I
N64S830HAT22I by Onsemi is an 8Kx8 SRAM with 3.6V max supply voltage, 20MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.
N02L83W2AN25IT
N02L83W2AN25IT by Onsemi is a 256Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline, thin profile package and operates in industrial temperature range. Ideal for applications requiring fast access times and low standby current.
256KX8
N02L83W2AN25I
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 256K;
N02L83W2AT25I
N02L83W2AT25I by Onsemi is a 256Kx8 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in harsh environments.
N08L63W2AB27I
Onsemi's N08L63W2AB27I is a 512Kx16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a thin profile grid array package suitable for industrial applications requiring fast access times of 85ns and low standby current of 0.00001Amp.
512KX16
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
15 mA
N25S830HAS22I
N25S830HAS22I by Onsemi is a 32KX8 SRAM with synchronous operation and 3-STATE output. It operates at 3V, has a clock frequency of 20MHz, and is ideal for industrial applications requiring high-speed memory access in small outline packages.
2.7 V
N25S830HAT22I
N25S830HAT22I by Onsemi is a 32KX8 SRAM with 3-STATE output, operating at 20 MHz. Ideal for industrial applications, it features a supply voltage of 2.7-3.6V and operates in synchronous mode with separate I/O type. Package style is small outline, thin profile, shrink pitch, making it suitable for compact designs.
N01L63W3AT25IT
N01L63W3AT25IT by Onsemi is a 64KX16 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.
N04L63W1AB27I
N04L63W1AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.
N04L63W1AT27I
N04L63W1AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.
N08L6182AB7I
N08L6182AB7I by Onsemi is a 512Kx16 SRAM with 85ns access time, operating at 1.8V. It features a thin profile grid array package suitable for industrial applications requiring fast and reliable memory storage in common asynchronous mode.
1.8/2
1.2 V
2.2 V
1.65 V
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