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SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.

SRAM

Available Parts 561

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
N64S818HAS21I by Onsemi

N64S818HAS21I

Onsemi

N64S818HAS21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply, and -40 to 85 °C operating range. Ideal for industrial applications requiring small outline package and separate I/O type in a synchronous mode setup.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

Not Qualified

1.75 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.91 mm

N64S818HAT21I by Onsemi

N64S818HAT21I

Onsemi

N64S818HAT21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply voltage, and -40 to 85 °C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8

Not Qualified

1.1 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

UPD44644182AF5-E40-FQ1-A by Renesas Electronics

UPD44644182AF5-E40-FQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;

.45 ns

250 MHz

COMMON

R-PBGA-B165

17 mm

75497472 bit

DDR SRAM

18

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

1.7 V

SRAMs

510 mA

1.9 V

1.7 V

1.8

YES

MOS

COMMERCIAL

BALL

1 mm

BOTTOM

15 mm

CY7C0241E-15AXI by Cypress Semiconductor

CY7C0241E-15AXI

Cypress Semiconductor

CY7C0241E-15AXI by Cypress is a 4Kx18 MULTI-PORT SRAM with 15ns access time, operating at -40 to 85°C. It has a supply voltage of 5V and consumes up to 305mA. Ideal for industrial applications requiring fast and reliable memory storage in a compact FLATPACK package.

15 ns

COMMON

S-PQFP-G100

e4

14 mm

73728 bit

MULTI-PORT SRAM

18

3

1

2

100

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

305 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

QUAD

40

14 mm

DS1258W-100 by Maxim Integrated

DS1258W-100

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

100 ns

R-XDMA-P40

e0

2097152 bit

NON-VOLATILE SRAM MODULE

16

1

40

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

Not Qualified

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

PIN/PEG

DUAL

M68AW256ML70ND6T by STMicroelectronics

M68AW256ML70ND6T

STMicroelectronics

M68AW256ML70ND6T from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.

70 ns

COMMON

R-PDSO-G44

e0

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

IDT71024S12TYI8 by Integrated Device Technology

IDT71024S12TYI8

Integrated Device Technology

IDT71024S12TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and offers 3-STATE output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in parallel configuration.

12 ns

COMMON

R-PDSO-J32

e0

20.96 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.76 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.62 mm

IDT71024S15TYI8 by Integrated Device Technology

IDT71024S15TYI8

Integrated Device Technology

IDT71024S15TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 15ns and is suitable for industrial applications requiring fast and reliable memory storage in a small outline package. With parallel interface and common I/O type, it offers high performance in various electronic devices.

15 ns

COMMON

R-PDSO-J32

e0

20.96 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.76 mm

.01 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.62 mm

M48Z35AV-10PC1 by STMicroelectronics

M48Z35AV-10PC1

STMicroelectronics

M48Z35AV-10PC1 by STMicroelectronics is a 32Kx8 non-volatile SRAM module with CMOS technology. It operates at 3.3V, has a max access time of 100ns, and consumes up to 50mA of supply current. This rectangular package with 28 terminals is ideal for applications requiring reliable data storage in commercial temperature environments.

100 ns

R-PDIP-T28

e3

39.625 mm

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.65 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M68AW256ML70ZB6 by STMicroelectronics

M68AW256ML70ZB6

STMicroelectronics

M68AW256ML70ZB6 from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at 3V, supports industrial temp ranges (-40 °C to 85 °C), and features a thin profile grid array package. Ideal for high-speed data storage in embedded systems.

70 ns

COMMON

R-PBGA-B48

e0

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

7 mm

M68AW128ML70ZB6 by STMicroelectronics

M68AW128ML70ZB6

STMicroelectronics

M68AW128ML70ZB6 from STMicroelectronics is a 128Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

CY7C0853V-133BBC by Cypress Semiconductor

CY7C0853V-133BBC

Cypress Semiconductor

CY7C0853V-133BBC by Cypress Semiconductor is a 256Kx36 SRAM with synchronous operation at 133MHz. It features a low profile grid array package and operates at 3.3V, making it ideal for high-speed memory applications in commercial-grade devices. With a memory density of 9437184 bits and fast access time of 4.7ns, it offers efficient parallel data processing capabilities.

4.7 ns

PIPELINED ARCHITECTURE

133 MHz

COMMON

S-PBGA-B172

e0

15 mm

9437184 bit

MULTI-PORT SRAM

36

3

1

2

172

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA172,14X14,40

SQUARE

GRID ARRAY, LOW PROFILE

PARALLEL

220

3.3

Not Qualified

1.25 mm

.075 Amp

3.14 V

SRAMs

400 mA

3.465 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

CY7C1019BV33-15ZI by Cypress Semiconductor

CY7C1019BV33-15ZI

Cypress Semiconductor

CY7C1019BV33-15ZI by Cypress Semiconductor is a 128Kx8 SRAM with 15ns access time, operating at 3.3V. It is ideal for industrial applications requiring high-speed and low-power memory solutions in a small outline package.

15 ns

R-PDSO-G32

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

10.16 mm

M68AW512ML70ND6 by STMicroelectronics

M68AW512ML70ND6

STMicroelectronics

M68AW512ML70ND6 from STMicroelectronics is a 512Kx16 asynchronous SRAM with a max access time of 70 ns. It operates b/w 2.7V and 3.6V, suitable for industrial applications due to its -40 °C to 85 °C temp range. Its compact SOIC package ensures efficient surface mounting.

70 ns

R-PDSO-G44

e0

18.41 mm

8388608 bit

STANDARD SRAM

16

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

CY7C1383C-100AC by Cypress Semiconductor

CY7C1383C-100AC

Cypress Semiconductor

CY7C1383C-100AC by Cypress Semiconductor is a 1MX18 SRAM with 100 terminals, operating at 100 MHz. It has a synchronous mode and common I/O type, suitable for applications requiring fast access times and high memory density. The package is rectangular in shape, surface mountable, and operates at temperatures b/w 0 to 70°C.

8.5 ns

FLOW-THROUGH ARCHITECTURE

100 MHz

COMMON

R-PQFP-G100

e0

20 mm

18874368 bit

STANDARD SRAM

18

3

1

100

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

2.5/3.3,3.3

Not Qualified

1.6 mm

.07 Amp

3.14 V

SRAMs

175 mA

3.63 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

QUAD

14 mm

SNJ54LS670W by Texas Instruments

SNJ54LS670W

Texas Instruments

SNJ54LS670W by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features a max clock frequency of 35MHz and offers an access time of 45ns. Ideal for military applications requiring fast and reliable memory storage in a compact flatpack package.

45 ns

35 MHz

R-GDFP-F16

e0

10.3 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

CERAMIC, GLASS-SEALED

DFP

FL16,.3

RECTANGULAR

FLATPACK

PARALLEL

5

Not Qualified

MIL-PRF-38535

2.03 mm

.05 Amp

Other Memory ICs

5.25 V

4.75 V

5

YES

TTL

MILITARY

TIN LEAD

FLAT

1.27 mm

DUAL

6.73 mm

MT45W4MW16BFB-706WT by Micron Technology

MT45W4MW16BFB-706WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

70 ns

SYNCHRONOUS BURST MODE POSSIBLE

COMMON

R-PBGA-B54

e0

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

ASYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PFA-70IT by Micron Technology

MT45W4MW16PFA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PFA-70WT by Micron Technology

MT45W4MW16PFA-70WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

STK20C04-WF25I by Simtek

STK20C04-WF25I

Simtek

Simtek's STK20C04-WF25I is a 512x8 non-volatile SRAM with 4096-bit memory density. Operating at 5V, it has an access time of 25ns and consumes a max of 90mA. Ideal for industrial applications requiring reliable asynchronous memory solutions in a compact rectangular package.

25 ns

R-PDIP-T28

e3

36.83 mm

4096 bit

NON-VOLATILE SRAM

8

1

28

512 words

512

ASYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

260

5

Not Qualified

4.57 mm

.00075 Amp

SRAMs

90 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M48Z2M1V-85PL1 by STMicroelectronics

M48Z2M1V-85PL1

STMicroelectronics

M48Z2M1V-85PL1 by STMicroelectronics is a 2Mx8 non-volatile SRAM with a max access time of 85 ns. It operates asynchronously at a supply voltage of 3.3V and supports temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention, it features a compact in-line package with 36 terminals.

85 ns

R-PDIP-T36

e0

52.96 mm

16777216 bit

NON-VOLATILE SRAM

8

1

36

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

9.52 mm

.001 Amp

SRAMs

70 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M68AW031AM70N6T by STMicroelectronics

M68AW031AM70N6T

STMicroelectronics

M68AW031AM70N6T from STMicroelectronics is a 32Kx8 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temperature ranges (-40 °C to 85 °C). Ideal for applications requiring fast, reliable memory in compact designs.

70 ns

COMMON

R-PDSO-G28

e0

11.8 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.000006 Amp

1.5 V

SRAMs

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.55 mm

DUAL

8 mm

71321LA55JI by Integrated Device Technology

71321LA55JI

Integrated Device Technology

71321LA55JI by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. Ideal for industrial applications, it features a square package shape, CMOS technology, and asynchronous operation mode.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

140 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

MT45W2MW16PABA-70IT by Micron Technology

MT45W2MW16PABA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

70 ns

COMMON

R-PBGA-B48

e8

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W2MW16PABA-70WT by Micron Technology

MT45W2MW16PABA-70WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

70 ns

COMMON

R-PBGA-B48

e8

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W2MW16PAFA-70IT by Micron Technology

MT45W2MW16PAFA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PAFA-70WT by Micron Technology

MT45W2MW16PAFA-70WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 2M;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PAFA-85WT by Micron Technology

MT45W2MW16PAFA-85WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA48,6X8,30;

85 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

17 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PBA-70IT by Micron Technology

MT45W4MW16PBA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00012 Amp;

70 ns

COMMON

R-PBGA-B48

e8

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W2MW16BABB-706LWT by Micron Technology

MT45W2MW16BABB-706LWT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 8 mm;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00009 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BAFB-706WT by Micron Technology

MT45W2MW16BAFB-706WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

70 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BAFB-856WT by Micron Technology

MT45W2MW16BAFB-856WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -30 Cel;

85 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

M48Z58Y-70MH1E by STMicroelectronics

M48Z58Y-70MH1E

STMicroelectronics

M48Z58Y-70MH1E by STMicroelectronics is a non-volatile SRAM with 8K x 8 organization, operating at a nominal voltage of 5V. It features asynchronous access with a max access time of 70 ns and operates in temperatures from 0 °C to 70 °C. Ideal for applications requiring reliable data retention and fast performance.

70 ns

R-PDSO-G28

e3

18.1 mm

65536 bit

NON-VOLATILE SRAM

8

3

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35Y-70MH1E by STMicroelectronics

M48Z35Y-70MH1E

STMicroelectronics

M48Z35Y-70MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a max access time of 70 ns, operating at 5V. It features a compact SO package and operates asynchronously, making it ideal for data storage in various electronic applications. With a commercial temp grade, it suits diverse environments.

70 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

M48Z35Y-70MH6E by STMicroelectronics

M48Z35Y-70MH6E

STMicroelectronics

M48Z35Y-70MH6E by STMicroelectronics is a non-volatile SRAM with a 32K x 8 organization, operating at 5V. It features a max access time of 70 ns and operates in temperatures from -40 °C to 85 °C. Ideal for industrial applications requiring reliable data retention.

70 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e4

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

8.56 mm

CY62168DV30LL-55BVI by Cypress Semiconductor

CY62168DV30LL-55BVI

Cypress Semiconductor

CY62168DV30LL-55BVI by Cypress is a 2MX8 SRAM with 3V supply, 55ns access time, and 16777216-bit memory density. Ideal for industrial applications requiring fast, common I/O asynchronous operation in a compact grid array package.

55 ns

COMMON

R-PBGA-B48

e0

9.5 mm

16777216 bit

STANDARD SRAM

8

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

220

2.5/3.3

Not Qualified

1 mm

.00001 Amp

1.5 V

SRAMs

30 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

8 mm

M48Z32V-35MT1F by STMicroelectronics

M48Z32V-35MT1F

STMicroelectronics

M48Z32V-35MT1F by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features a max access time of 35 ns and operates in temperatures from 0 °C to 70 °C. This compact, surface-mount device ensures efficient performance in various electronic systems.

35 ns

R-PDSO-G44

e3/e4

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SSOP

SOP44,.5,32

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

3.05 mm

.0005 Amp

SRAMs

45 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

.81 mm

DUAL

NOT SPECIFIED

8.56 mm

M48Z35AV-10MH1E by STMicroelectronics

M48Z35AV-10MH1E

STMicroelectronics

M48Z35AV-10MH1E by STMicroelectronics is a 32Kx8 non-volatile SRAM with a 3.3V supply, ideal for applications requiring fast data access and reliability. It features asynchronous operation with a max access time of 100 ns and operates b/w 0 °C to 70 °C. This compact, surface-mount device is perfect for commercial electronics needing efficient memory solutions.

100 ns

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

R-PDSO-G28

e3

18.1 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

Not Qualified

3.05 mm

.003 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

8.56 mm

23K640-E/P by Microchip Technology

23K640-E/P

Microchip Technology

23K640-E/P by Microchip Technology is a CMOS SRAM with 8Kx8 organization and 65536-bit memory density. It operates at a max clock frequency of 16 MHz and has a nominal voltage of 3V. This memory IC is commonly used in automotive applications due to its TS16949 screening level and temperature grade.

16 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

Not Qualified

TS 16949

5.334 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23K640-E/ST by Microchip Technology

23K640-E/ST

Microchip Technology

23K640-E/ST by Microchip Technology is a CMOS SRAM with 8Kx8 organization, operating at up to 16 MHz. It features separate I/O, 3-state output characteristics, and operates in automotive temperature grade applications.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

TS 16949

1.2 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

23K640T-E/ST by Microchip Technology

23K640T-E/ST

Microchip Technology

23K640T-E/ST by Microchip Technology is a 8Kx8 SRAM with 16MHz clock frequency, operating at -40 to 125°C. It has separate I/O, 3-state output, and serial interface. Ideal for automotive applications due to TS16949 screening level and low standby current of 0.00001A.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

TS 16949

1.2 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

IS63LV1024L-12BLI by Integrated Silicon Solution

IS63LV1024L-12BLI

Integrated Silicon Solution

IS63LV1024L-12BLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a thin profile grid array package and offers a fast access time of 12ns. Ideal for industrial applications requiring high-speed memory in compact form factors.

12 ns

COMMON

R-PBGA-B36

e1

10 mm

1048576 bit

STANDARD SRAM

8

3

1

36

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA36,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0015 Amp

2 V

SRAMs

100 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

8 mm

IS63LV1024L-12JL by Integrated Silicon Solution

IS63LV1024L-12JL

Integrated Silicon Solution

IS63LV1024L-12JL by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 3.3V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for commercial applications requiring fast memory access in a small outline package.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.56 mm

.0015 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

7.62 mm

IDT71256L35YI8 by Integrated Device Technology

IDT71256L35YI8

Integrated Device Technology

IDT71256L35YI8 by Integrated Device Technology is a 32Kx8 SRAM with 35ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous operation. Ideal for applications requiring fast and reliable memory storage in industrial environments.

35 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.0002 Amp

2 V

SRAMs

105 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.5184 mm

MT45W2MW16BAFB-708WT by Micron Technology

MT45W2MW16BAFB-708WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

70 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

IS61C1024AL-12KLI by Integrated Silicon Solution

IS61C1024AL-12KLI

Integrated Silicon Solution

IS61C1024AL-12KLI by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

12 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.76 mm

.00045 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

10

10.16 mm

MT45W8MW16BGX-701IT by Micron Technology

MT45W8MW16BGX-701IT

Micron Technology

MT45W8MW16BGX-701IT by Micron Technology is a 1.8V SRAM with 8MX16 organization, operating in industrial temperature range. Featuring 3-STATE output and parallel interface, it offers 8388608 words memory density for applications requiring fast access time of 70ns.

70 ns

COMMON

R-PBGA-B54

e1

10 mm

134217728 bit

PSEUDO STATIC RAM

16

1

1

54

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

YES

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.0002 Amp

1.7 V

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

8 mm

CAT24C44VI-T3 by Onsemi

CAT24C44VI-T3

Onsemi

CAT24C44VI-T3 by Onsemi is a 256-bit non-volatile SRAM with 16x16 organization. Operating at 5V, it has a max standby current of 0.00003A and operates in industrial temperature range (-40 to 85°C). Ideal for applications requiring small outline packages and synchronous operation.

R-PDSO-G8

e3

4.9 mm

256 bit

NON-VOLATILE SRAM

16

1

1

8

16 words

16

SYNCHRONOUS

85 Cel

-40 Cel

16X16

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

Not Qualified

1.75 mm

.00003 Amp

SRAMs

3 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm