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71321LA55JI

Integrated Device Technology

71321LA55JI by Integrated Device Technology

71321LA55JI by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. Ideal for industrial applications, it features a square package shape, CMOS technology, and asynchronous operation mode.

Median Price

$6.910

Lifecycle Status

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5

In-Stock Inventory

1k+

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Avnet

USA . 37 parts In-Stock

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Nova Conductors

Japan . 72 parts In-Stock

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$6.910

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Vyrian

USA . 2,955 parts In-Stock

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VNN

France . 2,210 parts In-Stock

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NexGen Digital

USA . 4 parts In-Stock

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AZTECH Wire

Italy . 448 parts In-Stock

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$12.764

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Ampacity Inc.

Singapore . 37 parts In-Stock

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$24.000

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Microchip USA

USA . 205 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the 71321LA55JI by Integrated Device Technology. As a leading manufacturer of high-quality SRAM products, this multi-port memory solution offers exceptional value and benefits to customers across various industrial applications. With a robust package body material and an operating mode of asynchronous, this chip carrier delivers fast access times and low standby currents, making it ideal for demanding environments. Trust Integrated Device Technology for cutting-edge technology and superior memory solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that provides protection to the internal components of the SRAM.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard voltage ensuring stability and reliability.

Output Characteristics: 3-STATE

Allows multiple devices to share a common bus, enabling efficient communication and data transfer.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance.

Maximum Access Time: 55 ns

Quick access time ensures fast read and write operations, enhancing overall performance.

Technical Specifications

SRAM 71321LA55JI attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e0

Length:

19.1262 mm

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

52

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.572 mm

Maximum Standby Current:

.004 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

140 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

19.1262 mm

Trade Compliance

71321LA55JI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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