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SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.

SRAM

Available Parts 561

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
IS62WV102416GBLL-45TLI-TR by Integrated Silicon Solution

IS62WV102416GBLL-45TLI-TR

Integrated Silicon Solution

IS62WV102416GBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at -40 to 85 °C, it has a max access time of 45 ns and uses CMOS technology. Ideal for industrial applications requiring fast, asynchronous memory with a supply voltage range of 2.2V to 3.6V.

45 ns

R-PDSO-G48

18.4 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV10248EBLL-45TLI-TR by Integrated Silicon Solution

IS62WV10248EBLL-45TLI-TR

Integrated Silicon Solution

IS62WV10248EBLL-45TLI-TR by Integrated Silicon Solution is a 1MX8 SRAM with 1048576 words and 8388608 bit memory density. Operating at -40 to 85 °C, it has a max access time of 45 ns. Ideal for industrial applications requiring fast, asynchronous memory with a parallel interface.

45 ns

R-PDSO-G44

18.41 mm

8388608 bit

STANDARD SRAM

8

1

44

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution

IS62WV51216GBLL-45TLI-TR

Integrated Silicon Solution

IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution is a 512Kx16 SRAM with a max access time of 45ns. Operating at 3V, it features an industrial temperature grade and parallel interface. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

45 ns

R-PDSO-G48

18.4 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR

Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution is a 4MX16 SRAM with 67108864-bit memory density. It operates in asynchronous mode with a max access time of 70ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

70 ns

R-PBGA-B48

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution is a 16MX8 SRAM with a package body material of PLASTIC/EPOXY. It operates in synchronous mode with a nominal voltage of 1.8V and has a memory density of 134217728 bits. This memory IC type is commonly used in industrial applications requiring high-speed data storage.

R-PBGA-B24

8 mm

134217728 bit

PSEUDO STATIC RAM

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with 67108864-bit memory density. Operating at 1.8V, it offers a synchronous mode with a max access time of 36ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

36 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR

Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with a memory density of 67108864 bit. It operates in synchronous mode with a max access time of 40 ns, suitable for industrial applications requiring fast and reliable parallel memory storage. The package style is grid array, thin profile, making it ideal for space-constrained designs.

40 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

23LC1024-I/SNVAO by Microchip Technology

23LC1024-I/SNVAO

Microchip Technology

Microchip Technology's 23LC1024-I/SNVAO is a 128KX8 SRAM with synchronous operation and 3-STATE output. It operates at up to 20 MHz clock frequency, suitable for industrial applications requiring high-speed memory access. With a small outline package style and low standby current of 0.00001 Amp, it is ideal for space-constrained designs in automotive electronics.

20 MHz

COMMON/SEPARATE

R-PDSO-G8

e3

4.9 mm

1048576 bit

STANDARD SRAM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

AEC-Q100; TS 16949

1.75 mm

.00001 Amp

2.5 V

10 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR

Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution is a 1MX16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package suitable for automotive applications. This CMOS memory IC has a density of 16Mbit and operates in parallel mode with a temperature range of -40 to 125°C.

10 ns

R-PBGA-B48

11 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.4 V

3.3

YES

CMOS

AUTOMOTIVE

BALL

.75 mm

BOTTOM

9 mm

48L256-I/SN by Microchip Technology

48L256-I/SN

Microchip Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

262144 bit

STANDARD SRAM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0003 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L512-I/SN by Microchip Technology

48L512-I/SN

Microchip Technology

48L512-I/SN by Microchip Technology is a 64KX8 SRAM with 66 MHz clock frequency, operating at -40 to 85 °C. It features 3-STATE output characteristics and operates on CMOS technology. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L512T-I/SN by Microchip Technology

48L512T-I/SN

Microchip Technology

48L512T-I/SN by Microchip is a 64KX8 SRAM with 66 MHz clock frequency, 3-STATE output, and operates at -40 to 85 °C. Ideal for industrial applications requiring fast synchronous memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L640-I/SN by Microchip Technology

48L640-I/SN

Microchip Technology

48L640-I/SN by Microchip Technology is an 8Kx8 SRAM with a memory density of 65536 bit. It operates at a max clock frequency of 66 MHz and has a min standby voltage of 2.7 V. Ideal for industrial applications requiring fast synchronous memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L640T-I/SN by Microchip Technology

48L640T-I/SN

Microchip Technology

48L640T-I/SN by Microchip Technology is an 8Kx8 SRAM with a memory density of 65536 bit. It operates in synchronous mode at a max clock frequency of 66 MHz, suitable for industrial applications requiring fast and reliable data storage. With a small outline package style and common I/O type, it offers high performance in a compact form factor.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48LM01-I/SM by Microchip Technology

48LM01-I/SM

Microchip Technology

48LM01-I/SM by Microchip Technology is a 128KX8 SRAM with synchronous operation and 66 MHz clock frequency. Ideal for industrial applications, it features a small outline package, 3-STATE output, and operates in the -40 to 85 °C temperature range.

66 MHz

COMMON

R-PDSO-G8

e3

5.26 mm

1048576 bit

STANDARD SRAM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.03 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.25 mm

48LM01T-I/SM by Microchip Technology

48LM01T-I/SM

Microchip Technology

48LM01T-I/SM by Microchip Technology is a 128KX8 SRAM with 66 MHz clock frequency, operating at -40 to 85 °C. It features synchronous operation, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

5.26 mm

1048576 bit

STANDARD SRAM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.03 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.25 mm

AS6C4008A-55ZINTR by Alliance Memory

AS6C4008A-55ZINTR

Alliance Memory

STANDARD SRAM; Moisture Sensitivity Level (MSL): 3;

STANDARD SRAM

3

W956D6KBKX7I by Winbond Electronics

W956D6KBKX7I

Winbond Electronics

SRAMs;

IS66WVH8M8DALL-200B1LI by Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI

Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI is an 8MX8 SRAM with 200 MHz clock frequency, 1.7-1.95 V supply voltage, and 85°C operating temperature. Ideal for industrial applications requiring high-speed synchronous memory with a thin profile grid array package.

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

NO

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.2 mm

.00004 Amp

1.7 V

40 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm

IS66WVS4M8ALL-104NLI by Integrated Silicon Solution

IS66WVS4M8ALL-104NLI

Integrated Silicon Solution

IS66WVS4M8ALL-104NLI by Integrated Silicon Solution is a 4MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 33554432 bit and operates at an industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.

104 MHz

COMMON

R-PDSO-G8

4.9 mm

33554432 bit

STANDARD SRAM

8

1

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

1.65 V

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

IS66WVS2M8BLL-104NLI by Integrated Silicon Solution

IS66WVS2M8BLL-104NLI

Integrated Silicon Solution

IS66WVS2M8BLL-104NLI by Integrated Silicon Solution is a 2MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 16Mb and operates at an industrial temperature grade. Ideal for applications requiring fast, reliable memory storage in compact electronic devices.

104 MHz

COMMON

R-PDSO-G8

4.9 mm

16777216 bit

STANDARD SRAM

8

1

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

CY7C1380KV33-167BZIT by Infineon Technologies

CY7C1380KV33-167BZIT

Infineon Technologies

CACHE SRAM; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 18874368 bit; Additional Features: PIPELINED OPERATION;

3.4 ns

PIPELINED OPERATION

167 MHz

COMMON

R-PBGA-B165

15 mm

18874368 bit

CACHE SRAM

36

3

1

1

165

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

3-STATE

YES

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

.065 Amp

3.135 V

163 mA

3.6 V

3.135 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

13 mm

CY7C1370KV33-167AXIT by Infineon Technologies

CY7C1370KV33-167AXIT

Infineon Technologies

ZBT SRAM; No. of Terminals: 100; Package Code: LQFP; Package Shape: RECTANGULAR; Maximum Access Time: 3.4 ns; Length: 20 mm;

3.4 ns

PIPELINED ARCHITECTURE

167 MHz

COMMON

R-PQFP-G100

20 mm

18874368 bit

ZBT SRAM

36

3

1

1

100

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

3-STATE

YES

PLASTIC/EPOXY

LQFP

QFP100,.7X.9,32

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

1.6 mm

.065 Amp

3.135 V

163 mA

3.6 V

3.135 V

3.3

YES

CMOS

GULL WING

.65 mm

QUAD

14 mm

71V30L25TFI by Renesas Electronics

71V30L25TFI

Renesas Electronics

MULTI-PORT SRAM; No. of Terminals: 64; Package Code: LFQFP; Package Shape: SQUARE; Length: 10 mm; Maximum Operating Temperature: 85 Cel;

25 ns

COMMON

S-PQFP-G64

10 mm

8192 bit

MULTI-PORT SRAM

8

1

64

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

YES

PLASTIC/EPOXY

LFQFP

QFP64,.47SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

1.6 mm

3.6 V

3 V

3.3

YES

CMOS

GULL WING

.5 mm

QUAD

10 mm

CY7C1380KV33-167AXIT by Infineon Technologies

CY7C1380KV33-167AXIT

Infineon Technologies

STANDARD SRAM; No. of Terminals: 100; Package Code: LQFP; Package Shape: RECTANGULAR; Technology: CMOS; Length: 20 mm;

3.4 ns

PIPE LINED ARCHITECTURE

167 MHz

COMMON

R-PQFP-G100

20 mm

18874368 bit

STANDARD SRAM

36

3

1

100

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

YES

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

1.6 mm

.08 Amp

3.135 V

163 mA

3.63 V

3.135 V

3.3

YES

CMOS

GULL WING

.65 mm

QUAD

14 mm

S80KS5122GABHV023 by Infineon Technologies

S80KS5122GABHV023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Enable: NO; Maximum Clock Frequency (fCLK): 200 MHz;

200 MHz

COMMON

R-PBGA-B24

8 mm

536870912 bit

HYPERRAM

8

3

1

1

24

67108964 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

3-STATE

NO

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

1 mm

.004 Amp

1.7 V

44 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S80KS5122GABHA023 by Infineon Technologies

S80KS5122GABHA023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm; Input/Output Type: COMMON;

200 MHz

COMMON

R-PBGA-B24

8 mm

536870912 bit

HYPERRAM

8

3

1

1

24

67108964 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

NO

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

.004 Amp

1.7 V

44 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S80KS5122GABHB023 by Infineon Technologies

S80KS5122GABHB023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Minimum Standby Voltage: 1.7 V; Maximum Clock Frequency (fCLK): 200 MHz;

200 MHz

COMMON

R-PBGA-B24

8 mm

536870912 bit

HYPERRAM

8

3

1

1

24

67108964 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

3-STATE

NO

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

.004 Amp

1.7 V

44 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S80KS5122GABHM023 by Infineon Technologies

S80KS5122GABHM023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL; Package Equivalence Code: BGA24,5X5,40;

200 MHz

COMMON

R-PBGA-B24

8 mm

536870912 bit

HYPERRAM

8

3

1

1

24

67108964 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

3-STATE

NO

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

.004 Amp

1.7 V

44 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

S80KS5122GABHI023 by Infineon Technologies

S80KS5122GABHI023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Density: 536870912 bit; No. of Words Code: 64M;

200 MHz

COMMON

R-PBGA-B24

8 mm

536870912 bit

HYPERRAM

8

3

1

1

24

67108964 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

NO

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

1 mm

.004 Amp

1.7 V

44 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

6 mm

CY14ME064J2-SXQT by Infineon Technologies

CY14ME064J2-SXQT

Infineon Technologies

NON-VOLATILE SRAM; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Output Enable: NO; Organization: 8KX8;

3.4 MHz

COMMON

R-PDSO-G8

4.889 mm

65536 bit

NON-VOLATILE SRAM

8

3

1

1

8

8192 words

8K

SYNCHRONOUS

105 Cel

-40 Cel

8KX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.727 mm

.00025 Amp

4.5 V

4 mA

5.5 V

4.5 V

5

YES

CMOS

GULL WING

1.27 mm

DUAL

3.8985 mm

CY14ME064Q2A-SXQT by Infineon Technologies

CY14ME064Q2A-SXQT

Infineon Technologies

NON-VOLATILE SRAM; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Output Enable: NO;

40 MHz

COMMON

R-PDSO-G8

4.889 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

105 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.727 mm

.00025 Amp

4.5 V

6 mA

5.5 V

4.5 V

5

YES

CMOS

GULL WING

1.27 mm

DUAL

3.8985 mm

70261S55PFI8 by Renesas Electronics

70261S55PFI8

Renesas Electronics

MULTI-PORT SRAM; No. of Terminals: 100; Package Code: LFQFP; Package Shape: RECTANGULAR; Maximum Standby Current: .015 Amp; Technology: CMOS;

55 ns

COMMON

S-PQFP-G100

14 mm

262144 bit

MULTI-PORT SRAM

16

1

2

100

16384 words

16K

ASYNCHRONOUS

85 Cel

-40 Cel

16KX16

3-STATE

YES

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

RECTANGULAR

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

1.6 mm

.015 Amp

4.5 V

270 mA

5.5 V

4.5 V

5

YES

CMOS

GULL WING

.5 mm

QUAD

14 mm