Loading...

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.

SRAM

Available Parts 561

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
IS63LV1024L-10HL by Integrated Silicon Solution

IS63LV1024L-10HL

Integrated Silicon Solution

IS63LV1024L-10HL by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at 0-70°C. It features asynchronous operation, 10ns access time, and 32 terminals in a small outline package. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

10 ns

COMMON

R-PDSO-G32

e3

11.8 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

LSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

260

3.3

Not Qualified

1.25 mm

.0015 Amp

2 V

SRAMs

95 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

10

8 mm

CY62256LL-70PXC by Cypress Semiconductor

CY62256LL-70PXC

Cypress Semiconductor

CY62256LL-70PXC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features a 3-STATE output and common I/O type, suitable for commercial applications requiring fast and reliable memory storage in a rectangular package style.

70 ns

COMMON

R-PDIP-T28

e4

36.322 mm

262144 bit

STANDARD SRAM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

260

5

Not Qualified

5.08 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

40

15.24 mm

CY62256LL-70SNXC by Cypress Semiconductor

CY62256LL-70SNXC

Cypress Semiconductor

CY62256LL-70SNXC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and supports asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

20

7.5057 mm

CY62256LL-70SNXI by Cypress Semiconductor

CY62256LL-70SNXI

Cypress Semiconductor

CY62256LL-70SNXI by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Widely used in industrial applications for its small outline package and parallel interface.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.5

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

20

7.5057 mm

CY7C1480V33-200AXC by Cypress Semiconductor

CY7C1480V33-200AXC

Cypress Semiconductor

CY7C1480V33-200AXC by Cypress is a 3.3V SRAM with 2MX36 organization, operating at 200MHz. It features synchronous operation, 100 terminals in a flatpack package, and is ideal for CACHE SRAM applications requiring fast access times up to 3ns.

3 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

75497472 bit

CACHE SRAM

36

3

1

100

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

IS61C6416AL-12KI by Integrated Silicon Solution

IS61C6416AL-12KI

Integrated Silicon Solution

IS61C6416AL-12KI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

12 ns

COMMON

R-PDSO-J44

e0

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.75 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

DUAL

10.16 mm

IS61C6416AL-12KLI by Integrated Silicon Solution

IS61C6416AL-12KLI

Integrated Silicon Solution

IS61C6416AL-12KLI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous mode. Ideal for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-J44

e3

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.75 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm

IS61C6416AL-12TI by Integrated Silicon Solution

IS61C6416AL-12TI

Integrated Silicon Solution

IS61C6416AL-12TI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-G44

e0

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

1.2 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

IS64C6416AL-15TLA3 by Integrated Silicon Solution

IS64C6416AL-15TLA3

Integrated Silicon Solution

IS64C6416AL-15TLA3 by Integrated Silicon Solution is a 64Kx16 SRAM with 5V supply, 15ns access time, and AEC-Q100 screening. Ideal for automotive applications due to its small outline package and wide operating temperature range from -40°C to 125°C. With common I/O type and 3-state output characteristics, it offers reliable performance in demanding environments.

15 ns

COMMON

R-PDSO-G44

e3

18.415 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

AEC-Q100

1.2 mm

.000125 Amp

2 V

SRAMs

60 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

IS62WV12816BLL-55BLI by Integrated Silicon Solution

IS62WV12816BLL-55BLI

Integrated Silicon Solution

IS62WV12816BLL-55BLI by Integrated Silicon Solution is a 128KX16 SRAM with 55 ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8 mm

2097152 bit

STANDARD SRAM

16

3

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.00001 Amp

1 V

SRAMs

30 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS62WV1288BLL-55QLI by Integrated Silicon Solution

IS62WV1288BLL-55QLI

Integrated Silicon Solution

IS62WV1288BLL-55QLI by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.3V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

55 ns

COMMON

R-PDSO-G32

e3

20.445 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3/3.3

Not Qualified

3 mm

.000005 Amp

1.2 V

SRAMs

15 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

11.305 mm

IS62WV1288BLL-55TLI by Integrated Silicon Solution

IS62WV1288BLL-55TLI

Integrated Silicon Solution

IS62WV1288BLL-55TLI by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and Gull Wing terminals. Ideal for applications requiring fast and reliable memory storage in harsh environments.

55 ns

COMMON

R-PDSO-G32

e3

18.4 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.000005 Amp

1.2 V

SRAMs

15 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

40

8 mm

CY7C1440AV33-167AXC by Cypress Semiconductor

CY7C1440AV33-167AXC

Cypress Semiconductor

CY7C1440AV33-167AXC by Cypress Semiconductor is a 1MX36 CACHE SRAM with 3.3V supply, 167 MHz clock frequency, and 3.4 ns access time. It is used in applications requiring fast synchronous memory operations at commercial temperature grades.

3.4 ns

PIPELINED ARCHITECTURE

167 MHz

COMMON

R-PQFP-G100

e4

20 mm

37748736 bit

CACHE SRAM

36

3

1

100

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

375 mA

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

40

14 mm

CY7C1440AV33-167BZC by Cypress Semiconductor

CY7C1440AV33-167BZC

Cypress Semiconductor

CY7C1440AV33-167BZC by Cypress Semiconductor is a 1MX36 CACHE SRAM with 1048576 words, 3.3V supply, and 3.4ns access time. It operates synchronously in commercial temperature range for applications requiring high-speed memory solutions.

3.4 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

e0

17 mm

37748736 bit

CACHE SRAM

36

3

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

Not Qualified

1.4 mm

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

IS63LV1024L-10JLI by Integrated Silicon Solution

IS63LV1024L-10JLI

Integrated Silicon Solution

IS63LV1024L-10JLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous operation, 10ns access time, and 3-STATE output. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

10 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.56 mm

.0015 Amp

2 V

SRAMs

105 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

7.62 mm

IS61LPS25636A-200TQLI by Integrated Silicon Solution

IS61LPS25636A-200TQLI

Integrated Silicon Solution

IS61LPS25636A-200TQLI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3.3V nominal voltage, operating at up to 200MHz clock frequency. Ideal for industrial applications requiring fast access time of 3.1ns and low standby current of 0.105Amp.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

9437184 bit

CACHE SRAM

36

1

100

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.105 Amp

3.14 V

SRAMs

275 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10

14 mm

CY7C09089V-12AXC by Cypress Semiconductor

CY7C09089V-12AXC

Cypress Semiconductor

CY7C09089V-12AXC by Cypress is a 64KX8 SRAM with 50 MHz clock frequency, 25 ns access time, and 3.3 V supply voltage. Ideal for applications requiring fast synchronous memory operations in commercial-grade devices.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

50 MHz

COMMON

S-PQFP-G100

e3

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.6 mm

.00025 Amp

3.14 V

SRAMs

205 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

CY7C1041D-10VXI by Cypress Semiconductor

CY7C1041D-10VXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOJ; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

10 ns

COMMON

R-PDSO-J44

e4

28.575 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1041D-10ZSXI by Cypress Semiconductor

CY7C1041D-10ZSXI

Cypress Semiconductor

CY7C1041D-10ZSXI by Cypress Semiconductor is a 256Kx16 SRAM with 10ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1049D-10VXI by Cypress Semiconductor

CY7C1049D-10VXI

Cypress Semiconductor

CY7C1049D-10VXI by Cypress Semiconductor is a 512Kx8 SRAM with 10ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Widely used in industrial applications for its small outline package and parallel interface.

10 ns

COMMON

R-PDSO-J36

e4

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1399B-15VXI by Cypress Semiconductor

CY7C1399B-15VXI

Cypress Semiconductor

CY7C1399B-15VXI by Cypress Semiconductor is a 32KX8 CACHE SRAM with 3.3V supply, 15ns access time, and 3-STATE output. It operates in industrial temperature range and has a small outline package suitable for various parallel applications.

15 ns

COMMON

R-PDSO-J28

e4

17.907 mm

262144 bit

CACHE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.556 mm

.00002 Amp

2 V

SRAMs

50 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

7.5 mm

CY7C1440AV33-250AXI by Cypress Semiconductor

CY7C1440AV33-250AXI

Cypress Semiconductor

CY7C1440AV33-250AXI by Cypress is a 1MX36 CACHE SRAM with 3.3V supply, 250MHz clock frequency, and 2.6ns access time. Ideal for industrial applications requiring high-speed synchronous memory with low power consumption.

2.6 ns

PIPELINED ARCHITECTURE

250 MHz

COMMON

R-PQFP-G100

e3

20 mm

37748736 bit

CACHE SRAM

36

3

1

100

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

475 mA

3.6 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

IS61LV6416-10BLI by Integrated Silicon Solution

IS61LV6416-10BLI

Integrated Silicon Solution

IS61LV6416-10BLI by Integrated Silicon Solution is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact GRID ARRAY package.

10 ns

COMMON

R-PBGA-B48

e1

8 mm

1048576 bit

STANDARD SRAM

16

3

1

48

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3.14 V

SRAMs

130 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS62LV256AL-45ULI by Integrated Silicon Solution

IS62LV256AL-45ULI

Integrated Silicon Solution

IS62LV256AL-45ULI by Integrated Silicon Solution is a 32KX8 SRAM with 3.3V supply, 45ns access time, and 32768 words. Ideal for industrial applications requiring fast and reliable memory storage in a small outline package.

45 ns

COMMON

R-PDSO-G28

e3

18.11 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

2.84 mm

.00002 Amp

2 V

SRAMs

12 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

10

8.405 mm

CY7C135-15JXC by Cypress Semiconductor

CY7C135-15JXC

Cypress Semiconductor

CY7C135-15JXC by Cypress Semiconductor is a 4Kx8 SRAM with 4096 words, 8-bit memory width, and 15ns access time. It operates at 5V, has a max supply voltage of 5.5V, and is ideal for commercial applications requiring fast and reliable parallel memory storage.

15 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C135-25JXC by Cypress Semiconductor

CY7C135-25JXC

Cypress Semiconductor

CY7C135-25JXC by Cypress Semiconductor is a 4Kx8 SRAM chip with 25ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast memory access in commercial-grade devices.

25 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

180 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C136-55NXC by Cypress Semiconductor

CY7C136-55NXC

Cypress Semiconductor

MULTI-PORT SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: QFP; Package Shape: SQUARE; Maximum Standby Current: .015 Amp;

55 ns

COMMON

S-PQFP-G52

e3

10 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

260

5

Not Qualified

2.45 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

QUAD

20

10 mm

CD74HCT670M96E4 by Texas Instruments

CD74HCT670M96E4

Texas Instruments

CD74HCT670M96E4 by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features an asynchronous mode, parallel interface, and max access time of 53ns. Ideal for military-grade applications requiring fast and reliable memory storage in a compact small outline package.

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

CD74HCT670MTE4 by Texas Instruments

CD74HCT670MTE4

Texas Instruments

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

IDT71256SA12YGI8 by Integrated Device Technology

IDT71256SA12YGI8

Integrated Device Technology

IDT71256SA12YGI8 by Integrated Device Technology is a 32Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

12 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

MT45W1MW16BDGB-701IT by Micron Technology

MT45W1MW16BDGB-701IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 1MX16;

70 ns

SYNCHRONOUS BURST MODE ALSO POSSIBLE

COMMON

R-PBGA-B54

e1

8 mm

16777216 bit

PSEUDO STATIC RAM

16

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00007 Amp

1.7 V

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W1MW16PDGA-70IT by Micron Technology

MT45W1MW16PDGA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

70 ns

COMMON

R-PBGA-B48

e1

8 mm

16777216 bit

PSEUDO STATIC RAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00007 Amp

1.7 V

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16BCGB-701WT by Micron Technology

MT45W4MW16BCGB-701WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00014 Amp

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W4MW16BCGB-708WT by Micron Technology

MT45W4MW16BCGB-708WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00014 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

IS61LV6416-10TLI by Integrated Silicon Solution

IS61LV6416-10TLI

Integrated Silicon Solution

IS61LV6416-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features a 10ns access time, 44 terminals in a small outline package, and is ideal for industrial applications requiring fast and reliable memory storage.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3.14 V

SRAMs

130 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS63LV1024L-10TLI by Integrated Silicon Solution

IS63LV1024L-10TLI

Integrated Silicon Solution

IS63LV1024L-10TLI by Integrated Silicon Solution is a 128Kx8 SRAM with 10ns access time, operating at 3.3V. It features a small outline package suitable for industrial applications, offering 131072 words of memory with 1048576 bits density in an asynchronous mode.

10 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0015 Amp

2 V

SRAMs

105 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

10

10.16 mm

CY7C008V-25AXC by Cypress Semiconductor

CY7C008V-25AXC

Cypress Semiconductor

CY7C008V-25AXC by Cypress Semiconductor is a 64KX8 SRAM with 3.3V supply, operating at 0-70 °C. It features 25 ns access time, 0.5 mm terminal pitch, and GULL WING terminals. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

25 ns

COMMON

S-PQFP-G100

e3

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.6 mm

.00005 Amp

3 V

SRAMs

165 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

7140LA100PF8 by Integrated Device Technology

7140LA100PF8

Integrated Device Technology

7140LA100PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with a memory density of 8192 bit. Operating at 5V, it offers an access time of 100ns and features a low profile FLATPACK package. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

100 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7140LA55PF8 by Integrated Device Technology

7140LA55PF8

Integrated Device Technology

7140LA55PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. It operates at a max access time of 55ns and has a supply voltage range of 4.5V to 5.5V, making it ideal for applications requiring fast and reliable data storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7140SA55PF8 by Integrated Device Technology

7140SA55PF8

Integrated Device Technology

7140SA55PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it offers a max access time of 55ns and features a low profile flatpack package style. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71421LA25PFI8 by Integrated Device Technology

71421LA25PFI8

Integrated Device Technology

71421LA25PFI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at -40 to 85°C. It features a 5V supply voltage, 64 terminals in a flatpack package, and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

64

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71421LA55JI8 by Integrated Device Technology

71421LA55JI8

Integrated Device Technology

71421LA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for industrial applications requiring fast memory access and common I/O type.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

140 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7142LA25JI8 by Integrated Device Technology

7142LA25JI8

Integrated Device Technology

7142LA25JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a square chip carrier package style and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in a compact form factor.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C1019CV33-10ZXI by Cypress Semiconductor

CY7C1019CV33-10ZXI

Cypress Semiconductor

CY7C1019CV33-10ZXI by Cypress Semiconductor is a 128Kx8 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

10 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.005 Amp

3 V

SRAMs

80 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C1019CV33-12ZXC by Cypress Semiconductor

CY7C1019CV33-12ZXC

Cypress Semiconductor

CY7C1019CV33-12ZXC by Cypress Semiconductor is a 128Kx8 SRAM with 3.3V supply voltage, operating at 0-70°C. It features asynchronous mode, 12ns access time, and 1.27mm terminal pitch. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

12 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.005 Amp

2 V

SRAMs

75 mA

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C131-55JXIT by Cypress Semiconductor

CY7C131-55JXIT

Cypress Semiconductor

CY7C131-55JXIT by Cypress Semiconductor is a 1Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

YES

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C1399BN-12ZXC by Cypress Semiconductor

CY7C1399BN-12ZXC

Cypress Semiconductor

CY7C1399BN-12ZXC by Cypress Semiconductor is a 32KX8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 12ns access time, and 55mA max supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

12 ns

COMMON

R-PDSO-G28

e4

11.8 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0005 Amp

3 V

SRAMs

55 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.55 mm

DUAL

30

8 mm

CYDM128B16-55BVXI by Cypress Semiconductor

CYDM128B16-55BVXI

Cypress Semiconductor

CYDM128B16-55BVXI by Cypress Semiconductor is a 8KX16 MULTI-PORT SRAM with 55 ns access time, operating at 1.8/3 V. It features a very thin profile GRID ARRAY package suitable for industrial applications. This CMOS technology memory device has 100 terminals in a square shape, making it ideal for high-speed parallel operations.

55 ns

ALSO OPERATES AT 2.5V AND 3V SUPPLY

COMMON

S-PBGA-B100

e1

6 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA100,10X10,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8/3

Not Qualified

1 mm

.000006 Amp

1.7 V

SRAMs

60 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

20

6 mm