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7142LA25JI8

Integrated Device Technology

7142LA25JI8 by Integrated Device Technology

7142LA25JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a square chip carrier package style and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in a compact form factor.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 3,729 parts In-Stock

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VNN

France . 2,952 parts In-Stock

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Nova Conductors

Japan . 65 parts In-Stock

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AZTECH Wire

Italy . 199 parts In-Stock

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$6.040

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Ampacity Inc.

Singapore . 461 parts In-Stock

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$21.000

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Continental Prestige Electronics

USA . 6,007 parts In-Stock

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Argo Parts USA

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Aranea Global

USA . 500 parts In-Stock

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Microchip USA

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Overview

Elevate your electronic devices with the 7142LA25JI8 by Integrated Device Technology, a high-quality multi-port SRAM that delivers unmatched performance and reliability. Manufactured by industry leader IDT, this chip carrier package boasts a 2Kx8 organization, providing ample memory density for your applications. With a wide operating temperature range and low power consumption, this asynchronous SRAM is perfect for industrial-grade devices. Experience faster access times and seamless data processing with the 7142LA25JI8, setting your products apart from the competition. Reach new heights of efficiency and functionality with this cutting-edge solution from Integrated Device Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Works efficiently at the standard voltage level of 5V, ensuring optimal performance.

No. of Terminals: 52

Offers multiple connection points for interfacing with other components, increasing versatility and functionality.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments where heat may be a factor.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation, making it energy-efficient and fast.

Memory IC Type: MULTI-PORT SRAM

Provides multiple ports for simultaneous access to data, enhancing efficiency in data transfer and processing.

Technical Specifications

SRAM 7142LA25JI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

25 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e0

Length:

19.1262 mm

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

52

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.004 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

19.1262 mm

Trade Compliance

7142LA25JI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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