Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.
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CY7C1021BN-12ZXC
Cypress Semiconductor
CY7C1021BN-12ZXC by Cypress Semiconductor is a 64KX16 SRAM with 12 ns access time, operating at 5V. It features a small outline package and GULL WING terminals, suitable for commercial applications requiring fast and reliable memory storage.
12 ns
COMMON
R-PDSO-G44
e4
18.415 mm
1048576 bit
STANDARD SRAM
16
3
1
44
65536 words
64K
ASYNCHRONOUS
70 Cel
0 Cel
64KX16
3-STATE
PLASTIC/EPOXY
TSOP2
TSOP44,.46,32
RECTANGULAR
SMALL OUTLINE, THIN PROFILE
PARALLEL
260
5
Not Qualified
1.194 mm
.01 Amp
4.5 V
SRAMs
130 mA
5.5 V
YES
CMOS
COMMERCIAL
Nickel/Palladium/Gold (Ni/Pd/Au)
GULL WING
.8 mm
DUAL
20
10.16 mm
CY7C1021BN-15VXC
CY7C1021BN-15VXC by Cypress: 64KX16 SRAM with 15ns access time, 5V supply voltage, and 3-STATE output. Ideal for commercial applications requiring fast parallel memory operations in a compact SMALL OUTLINE package.
15 ns
R-PDSO-J44
28.575 mm
SOJ
SOJ44,.44
SMALL OUTLINE
3.7592 mm
NICKEL PALLADIUM GOLD
J BEND
1.27 mm
40
CY7C1021BN-15VXI
CY7C1021BN-15VXI by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features 3-STATE output and is ideal for industrial applications requiring fast and reliable parallel memory storage. This small outline package offers common I/O type and dual terminal position for easy integration in various electronic devices.
85 Cel
-40 Cel
INDUSTRIAL
CY7C1021BN-15ZXI
CY7C1021BN-15ZXI by Cypress Semiconductor is a 64KX16 SRAM with 3-STATE output, operating at 5V. It has a fast access time of 15ns and industrial temperature grade. Ideal for applications requiring high-speed memory operations in harsh environments.
IDT71256SA12YGI
Integrated Device Technology
IDT71256SA12YGI by Integrated Device Technology is a 32Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and asynchronous operation, suitable for industrial applications requiring fast and reliable memory storage. With 3-state output characteristics and common I/O type, it offers high performance in a compact form factor.
R-PDSO-J28
e3
17.9324 mm
262144 bit
8
28
32768 words
32K
32KX8
SOJ28,.34
3.556 mm
.015 Amp
160 mA
MATTE TIN
7.5184 mm
CY7C1041BNV33L-15ZXC
CY7C1041BNV33L-15ZXC by Cypress Semiconductor is a 256KX16 SRAM with 3.3V supply, 15ns access time, and 170mA supply current. It is used in commercial applications requiring fast and reliable memory storage in a small outline package.
4194304 bit
262144 words
256K
256KX16
3.3
.00033 Amp
2 V
170 mA
3.6 V
3 V
CYD36S36V18-200BGXC
CYD36S36V18-200BGXC by Cypress Semiconductor is a 1MX36 SRAM with 200 MHz clock frequency, 3-STATE output, and 1.5/1.8 V supplies. Ideal for high-speed data buffering applications due to its synchronous operation and common I/O type in a square package with 484 terminals.
3.3 ns
PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V
200 MHz
S-PBGA-B484
e1
27 mm
37748736 bit
MULTI-PORT SRAM
36
2
484
1048576 words
1M
SYNCHRONOUS
1MX36
BGA
BGA484,22X22,40
SQUARE
GRID ARRAY
1.5/1.8
2.46 mm
.59 Amp
1.4 V
1500 mA
1.58 V
1.42 V
1.5
Tin/Silver/Copper (Sn/Ag/Cu)
BALL
1 mm
BOTTOM
7008L20JI
7008L20JI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in ASYNCHRONOUS mode. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.
20 ns
S-PQCC-J84
e0
29.3116 mm
524288 bit
84
64KX8
QCCJ
LDCC84,1.2SQ
CHIP CARRIER
225
4.57 mm
335 mA
TIN LEAD
QUAD
30
7008L20PFI
7008L20PFI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a low profile FLATPACK package with 0.5mm terminal pitch, suitable for industrial applications requiring fast and reliable parallel memory storage. With 3-STATE output characteristics and common I/O type, it offers high performance in an asynchronous mode.
S-PQFP-G100
14 mm
100
LFQFP
QFP100,.63SQ,20
FLATPACK, LOW PROFILE, FINE PITCH
240
1.6 mm
.5 mm
7008S55PFI
7008S55PFI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a low profile flatpack package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in harsh environments.
55 ns
.03 Amp
310 mA
IS62WV10248BLL-55BLI
Integrated Silicon Solution
IS62WV10248BLL-55BLI by Integrated Silicon Solution is a 1MX8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.
R-PBGA-B48
8.7 mm
8388608 bit
48
1MX8
TFBGA
BGA48,6X8,30
GRID ARRAY, THIN PROFILE, FINE PITCH
3/3.3
1.2 mm
.00002 Amp
1.2 V
35 mA
2.5 V
TIN SILVER COPPER
.75 mm
10
7.2 mm
IS62WV1288DBLL-45HLI
IS62WV1288DBLL-45HLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous operation, 45ns access time, and 1048576-bit memory density. Ideal for applications requiring fast and reliable data storage in harsh environments.
45 ns
R-PDSO-G32
11.8 mm
32
131072 words
128K
128KX8
TSOP1
TSSOP32,.56,20
2.5/3.3
.000004 Amp
8 mA
2.3 V
8 mm
CY14E256L-SZ35XI
CY14E256L-SZ35XI by Cypress Semiconductor is a 32Kx8 SRAM with 262144-bit memory density. Operating at 5V, it offers a max access time of 35ns and industrial temperature grade suitability. Ideal for applications requiring fast, non-volatile memory storage in compact designs.
35 ns
20.726 mm
NON-VOLATILE SRAM
SOP
SOP32,.4
2.54 mm
.0015 Amp
85 mA
Matte Tin (Sn)
7.505 mm
IS61WV102416BLL-10MI
IS61WV102416BLL-10MI by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact grid array package.
10 ns
11 mm
16777216 bit
1MX16
235
.02 Amp
95 mA
2.4 V
Tin/Lead (Sn/Pb)
9 mm
IS64WV102416BLL-10MA3
IS64WV102416BLL-10MA3 by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 125°C operating temp. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.
125 Cel
AEC-Q100
.05 Amp
140 mA
AUTOMOTIVE
CY7C1019CV33-10ZXCT
CY7C1019CV33-10ZXCT by Cypress Semiconductor is a 128KX8 SRAM with 131072 words, operating at 3.3V. It has a max access time of 10 ns and is ideal for commercial applications requiring fast and reliable memory storage in a small outline package.
20.95 mm
3.63 V
2.97 V
TIN
CY7C1021BL-15ZXIT
CY7C1021BL-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It has a small outline, thin profile package and is suitable for industrial applications requiring fast and reliable parallel memory storage.
IS61LPS25618A-200TQLI
IS61LPS25618A-200TQLI by Integrated Silicon Solution is a 256KX18 CACHE SRAM with a max clock frequency of 200 MHz. It operates in synchronous mode and has a min standby voltage of 3.14 V. This memory IC is commonly used in industrial applications requiring high-speed data storage and retrieval.
3.1 ns
PIPELINED ARCHITECTURE
R-PQFP-G100
20 mm
4718592 bit
CACHE SRAM
18
256KX18
LQFP
QFP100,.63X.87
FLATPACK, LOW PROFILE
2.5/3.3,3.3
.000075 Amp
3.14 V
210 mA
3.465 V
3.135 V
.65 mm
IS62C5128BL-45QLI
IS62C5128BL-45QLI by Integrated Silicon Solution is a 512Kx8 SRAM with 3-STATE output, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast access time and low standby current.
20.495 mm
524288 words
512K
512KX8
SOP32,.56
3.12 mm
.000015 Amp
20 mA
11.305 mm
CY6264-55SNXI
CY6264-55SNXI by Cypress Semiconductor is an 8KX8 SRAM with a 55ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.
R-PDSO-G28
65536 bit
8192 words
8K
8KX8
SOP28,.45
2.794 mm
260 mA
7.5057 mm
CY7C1021BN-15VXE
CY7C1021BN-15VXE by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is AEC-Q100 qualified for automotive applications. This asynchronous memory has 44 terminals, offers 3-STATE output characteristics, and supports common I/O type.
CY7C1061AV33-10ZXC
CY7C1061AV33-10ZXC by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 275mA max supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.
R-PDSO-G54
22.415 mm
54
TSOP54,.46,32
275 mA
IS61LPS25636A-200B3LI
IS61LPS25636A-200B3LI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a synchronous mode and operates on a supply voltage of 2.5/3.3V, making it suitable for industrial applications requiring fast access times and high memory density. The package style is grid array with thin profile, ideal for space-constrained designs.
R-PBGA-B165
15 mm
9437184 bit
165
256KX36
TBGA
BGA165,11X15,40
GRID ARRAY, THIN PROFILE
.105 Amp
13 mm
DS1245ABP-70IND
Maxim Integrated
DS1245ABP-70IND by Maxim Integrated is a 128Kx8 SRAM with 70ns access time, operating at 5V. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular package with 34 terminals.
70 ns
R-XDMA-U34
NON-VOLATILE SRAM MODULE
34
UNSPECIFIED
MODULE,34LEAD,1.0
MICROELECTRONIC ASSEMBLY
.005 Amp
5.25 V
4.75 V
J INVERTED
IS61WV10248BLL-10MLI
IS61WV10248BLL-10MLI by Integrated Silicon Solution is a 1MX8 SRAM with 3.6V max supply voltage, 10ns access time, and 85°C max operating temp. Ideal for industrial applications requiring high-speed memory with a parallel interface in a compact grid array package.
BGA48,6X8,32
.025 Amp
100 mA
DS1220AD-200IND
DS1220AD-200IND by Maxim Integrated is a 2Kx8 SRAM with 5V supply, operating in asynchronous mode. It has a max access time of 200ns and industrial temperature grade. Ideal for applications requiring fast and reliable non-volatile memory storage in harsh environments.
200 ns
R-XDMA-P24
16384 bit
24
2048 words
2K
2KX8
DIP
DIP24,.6
15 mA
NO
PIN/PEG
DS1225Y-200IND
DS1225Y-200IND by Maxim Integrated is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and consumes up to 85mA. Ideal for industrial applications requiring non-volatile memory storage in microelectronic assemblies.
10 YEAR DATA RETENTION
R-XDMA-P28
DIP28,.6
DS1230W-100IND
NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 256KX8;
100 ns
R-PDIP-T28
38.225 mm
2097152 bit
256KX8
IN-LINE
10.668 mm
.00015 Amp
50 mA
THROUGH-HOLE
15.24 mm
DS1270Y-70IND
DS1270Y-70IND by Maxim Integrated is a 2MX8 SRAM with 2097152 words, 16777216 bit memory density, and 70 ns max access time. It operates in industrial temperature range (-40 to 85 °C) and is ideal for applications requiring non-volatile memory storage in microelectronic assemblies.
5 YEAR DATA RETENTION
R-PDMA-P36
2097152 words
2M
2MX8
IS62WV2568EBLL-45HLI
IS62WV2568EBLL-45HLI by Integrated Silicon Solution is an 256Kx8 SRAM with a max access time of 45ns. Operating at 3V, it features a parallel interface and industrial temperature grade suitable for various memory applications. The package style is small outline, thin profile, making it ideal for space-constrained designs.
2.2 V
23LC1024T-E/SN
Microchip Technology
23LC1024T-E/SN by Microchip Technology is a synchronous SRAM with 128KX8 organization and 1048576 bit memory density. It operates at a max clock frequency of 16 MHz and has a min standby voltage of 2.5 V. This memory IC is commonly used in automotive applications due to its TS 16949 screening level and temperature grade.
16 MHz
COMMON/SEPARATE
R-PDSO-G8
4.9 mm
SOP8,.23
SERIAL
3/5
TS 16949
1.75 mm
10 mA
3.9 mm
IS66WVE4M16TBLL-70BLI
IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution is a 4MX16 SRAM with 3-STATE output, operating in asynchronous mode. It features a memory density of 67108864 bit and offers a max access time of 70 ns. Ideal for industrial applications requiring fast and reliable parallel memory operations at temperatures ranging from -40 to 85°C.
67108864 bit
PSEUDO STATIC RAM
4194304 words
4M
4MX16
2.7 V
25 mA
6 mm
N01S818HAT22I
Onsemi
N01S818HAT22I by Onsemi is a 128KX8 SRAM with synchronous operation. It features a small outline, thin profile package and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed memory access in compact electronic devices.
4.4 mm
TSSOP
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
1.1 mm
1.7 V
3 mm
IS61WV204816BLL-10TLI
IS61WV204816BLL-10TLI by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates at an industrial temperature grade of -40 to 85 °C and has a max access time of 10 ns. Ideal for applications requiring fast, asynchronous memory access in compact spaces.
R-PDSO-G48
18.4 mm
33554432 bit
2MX16
NOT SPECIFIED
12 mm
IS64WV204816BLL-12CTLA3
IS64WV204816BLL-12CTLA3 by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates asynchronously at a max speed of 12 ns and supports a supply voltage range from 2.4V to 3.6V. Ideal for automotive applications, this small outline, thin profile memory IC offers reliable parallel data storage in compact systems.
IS61C1024AL-12KLI-TR
IS61C1024AL-12KLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package, asynchronous operation, and 3-state output. Ideal for industrial applications requiring fast and reliable memory storage.
R-PDSO-J32
SOJ32,.44
3.76 mm
.00045 Amp
CY7C131E-55JXCT
CY7C131E-55JXCT by Cypress Semiconductor is a 1Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a 3-STATE output and operates in ASYNCHRONOUS mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.
S-PQCC-J52
19.1262 mm
8192 bit
52
1024 words
1K
1KX8
LDCC52,.8SQ
5.08 mm
AP3983BMTR-G1
Diodes Incorporated
STANDARD SRAM; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30;
AS7C351232-10BINTR
Alliance Memory
Alliance Memory's AS7C351232-10BINTR is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a thin profile grid array package and CMOS technology for reliable performance in harsh environments.
R-PBGA-B90
90
512KX32
AS7C351232-10BIN
Alliance Memory's AS7C351232-10BIN is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and is ideal for industrial applications requiring fast parallel memory solutions.
IS62WV51216GBLL-45TLI
IS62WV51216GBLL-45TLI by Integrated Silicon Solution is a 512Kx16 SRAM with a memory density of 8388608 bits. It operates in asynchronous mode with a max access time of 45 ns, suitable for industrial applications requiring fast and reliable data storage. The memory IC type is standard SRAM, featuring parallel interface and low power consumption at supply voltages ranging from 2.2V to 3.6V.
512KX16
AS6C1008-55SINL
Alliance Memory's AS6C1008-55SINL is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it offers parallel interface, small outline package, and operates in temperature range of -40 to 85°C.
LG-MAX
20.75 mm
2.997 mm
11.303 mm
IS62WV51216HBLL-45B2LI
IS62WV51216HBLL-45B2LI by Integrated Silicon Solution is a 512Kx16 SRAM with 8388608-bit memory density. It operates at 3V, has a max access time of 45ns, and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable data storage in compact devices.
VFBGA
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
IS61VPS204836B-250B3L-TR
IS61VPS204836B-250B3L-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates at 2.5V, has a memory width of 36 bits, and offers a max access time of 2.8 ns. Ideal for applications requiring fast synchronous memory with high storage capacity in commercial temperature environments.
2.8 ns
75497472 bit
2MX36
2.625 V
2.375 V
2.5
IS61VPS204836B-250B3LI-TR
IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates in synchronous mode at 2.5V, with a max access time of 2.8 ns. Ideal for industrial applications requiring fast and reliable parallel memory solutions.
IS61WV204816BLL-10TLI-TR
IS61WV204816BLL-10TLI-TR by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates at 3V, has a max access time of 10ns, and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.
IS62WV102416DBLL-45TLI-TR
IS62WV102416DBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at an industrial temperature grade of -40 to 85 °C, it offers a max access time of 45 ns. Ideal for applications requiring fast and reliable data storage in harsh environments.
IS62WV102416FBLL-45BLI-TR
IS62WV102416FBLL-45BLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with a memory density of 16Mbit. It operates asynchronously at a max access time of 45ns and has a temperature grade suitable for industrial applications.
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