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SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.

SRAM

Available Parts 561

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
BQ4013LYMA-70N by Texas Instruments

BQ4013LYMA-70N

Texas Instruments

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

70 ns

R-PDMA-P32

42.8 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

BQ4015LYMA-70N by Texas Instruments

BQ4015LYMA-70N

Texas Instruments

BQ4015LYMA-70N by Texas Instruments is a 512Kx8 SRAM module with 70ns access time, operating at 3.3V and 85°C max temp. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular plastic package with 32 terminals.

70 ns

R-PDMA-P32

4194304 bit

NON-VOLATILE SRAM MODULE

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

5

Not Qualified

.001 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

BQ4011LYMA-70N by Texas Instruments

BQ4011LYMA-70N

Texas Instruments

BQ4011LYMA-70N by Texas Instruments is a 32Kx8 SRAM module with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 70ns access time, and 262144-bit memory density. Ideal for industrial applications requiring non-volatile memory in a compact MICROELECTRONIC ASSEMBLY package.

70 ns

R-PDMA-P28

37.72 mm

262144 bit

NON-VOLATILE SRAM MODULE

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

9.53 mm

.001 Amp

SRAMs

30 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

PIN/PEG

2.54 mm

DUAL

NOT SPECIFIED

18.415 mm

IS61WV51232BLL-10BLI by Integrated Silicon Solution

IS61WV51232BLL-10BLI

Integrated Silicon Solution

IS61WV51232BLL-10BLI by Integrated Silicon Solution is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a low profile grid array package and is ideal for industrial applications requiring fast and reliable parallel memory storage. With a memory density of 16Mbit, it offers high-speed data retrieval in harsh environments.

10 ns

R-PBGA-B90

e1

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1.45 mm

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10

8 mm

7008L20JI8 by Integrated Device Technology

7008L20JI8

Integrated Device Technology

7008L20JI8 by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.

20 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

COMMON

S-PQCC-J84

e0

29.3116 mm

524288 bit

MULTI-PORT SRAM

8

1

1

2

84

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC84,1.2SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

29.3116 mm

7008L20PFI8 by Integrated Device Technology

7008L20PFI8

Integrated Device Technology

7008L20PFI8 by Integrated Device Technology is a 64Kx8 SRAM with 3-STATE output, operating at 5V. It features a low profile flatpack package with 0.5mm terminal pitch, suitable for industrial applications requiring fast access times of up to 20ns. This multi-port SRAM has a memory density of 524288 bits and can operate in parallel mode.

20 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7008S55PFI8 by Integrated Device Technology

7008S55PFI8

Integrated Device Technology

7008S55PFI8 by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a low profile flatpack package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage with common I/O type and 3-STATE output characteristics.

55 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.03 Amp

4.5 V

SRAMs

310 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7024L55PF8 by Integrated Device Technology

7024L55PF8

Integrated Device Technology

7024L55PF8 by Integrated Device Technology is a 4Kx16 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package with fine pitch and gull wing terminals, suitable for commercial temperature grade applications. With 4096 words and 16-bit memory width, it offers fast parallel data processing in various electronic systems.

55 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G100

e0

14 mm

65536 bit

MULTI-PORT SRAM

16

3

1

2

100

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7025S20PF8 by Integrated Device Technology

7025S20PF8

Integrated Device Technology

7025S20PF8 by Integrated Device Technology is an 8Kx16 SRAM with a memory density of 131072 bit. It operates at a nominal voltage of 5V and has an access time of 20ns. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

20 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE

COMMON

S-PQFP-G100

e0

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

290 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7025S25PF8 by Integrated Device Technology

7025S25PF8

Integrated Device Technology

7025S25PF8 by Integrated Device Technology is an 8Kx16 MULTI-PORT SRAM with a memory density of 131072 bit. It operates at a max access time of 25ns and has a supply voltage range from 4.5V to 5.5V, making it suitable for high-speed applications requiring fast data access and storage capabilities in commercial-grade environments.

25 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE

COMMON

S-PQFP-G100

e0

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

265 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

709289L9PFI by Integrated Device Technology

709289L9PFI

Integrated Device Technology

709289L9PFI by Integrated Device Technology is a synchronous SRAM with an organization of 64KX16. It operates at a max clock frequency of 66 MHz and has a memory density of 1,048,576 bits. This multi-port SRAM is commonly used in industrial applications requiring high-speed data storage and retrieval.

20 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

66 MHz

COMMON

S-PQFP-G100

e0

14 mm

1048576 bit

MULTI-PORT SRAM

16

3

1

2

100

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.006 Amp

4.5 V

SRAMs

430 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V261L25PFI8 by Integrated Device Technology

70V261L25PFI8

Integrated Device Technology

70V261L25PFI8 by Integrated Device Technology is a 16KX16 MULTI-PORT SRAM with a supply voltage of 3.3V. It operates asynchronously and has a max access time of 25ns. This SRAM is commonly used in industrial applications due to its low profile, fine pitch package style and wide temperature range (up to 85°C).

25 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G100

e0

14 mm

262144 bit

MULTI-PORT SRAM

16

3

1

2

100

16384 words

16K

ASYNCHRONOUS

85 Cel

-40 Cel

16KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

185 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V26L25JI8 by Integrated Device Technology

70V26L25JI8

Integrated Device Technology

70V26L25JI8 by Integrated Device Technology is a 16Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features a 25ns access time, 185mA max supply current, and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in a compact chip carrier package.

25 ns

COMMON

S-PQCC-J84

e0

29.2862 mm

262144 bit

MULTI-PORT SRAM

16

1

1

2

84

16384 words

16K

ASYNCHRONOUS

85 Cel

-40 Cel

16KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC84,1.2SQ

SQUARE

CHIP CARRIER

PARALLEL

225

3.3

Not Qualified

4.572 mm

.003 Amp

3 V

SRAMs

185 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

29.2862 mm

70V27L20PFI8 by Integrated Device Technology

70V27L20PFI8

Integrated Device Technology

70V27L20PFI8 by Integrated Device Technology is a 32Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a low profile FLATPACK package suitable for industrial applications, offering fast access time of 20 ns and common I/O type.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

16

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.006 Amp

3 V

SRAMs

230 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V27L35PFI8 by Integrated Device Technology

70V27L35PFI8

Integrated Device Technology

70V27L35PFI8 by Integrated Device Technology is a 32Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a fast access time of 35ns and is ideal for industrial applications requiring high-speed memory solutions.

35 ns

INTERRUPT FLAGS

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

16

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.006 Amp

3 V

SRAMs

235 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V37L20PFI8 by Integrated Device Technology

70V37L20PFI8

Integrated Device Technology

70V37L20PFI8 by Integrated Device Technology is a 32KX18 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a low profile FLATPACK package and offers fast access time of 20 ns. Ideal for industrial applications requiring high-speed memory operations.

20 ns

INTERRUPT FLAG

COMMON

S-PQFP-G100

e0

14 mm

589824 bit

MULTI-PORT SRAM

18

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V38L20PFI8 by Integrated Device Technology

70V38L20PFI8

Integrated Device Technology

70V38L20PFI8 by Integrated Device Technology is a 64Kx18 MULTI-PORT SRAM with 3.3V supply, operating in ASYNCHRONOUS mode. Featuring a low profile FLATPACK package, 0.5mm terminal pitch, and industrial temperature grade, it's ideal for high-speed parallel memory applications.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

1179648 bit

MULTI-PORT SRAM

18

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V631S12PRFI8 by Integrated Device Technology

70V631S12PRFI8

Integrated Device Technology

70V631S12PRFI8 by Integrated Device Technology is a 256Kx18 MULTI-PORT SRAM with 3.3V nominal voltage, operating in synchronous mode. It features a low profile flatpack package and offers fast access time of 12 ns, making it ideal for industrial applications requiring high-speed memory solutions.

12 ns

COMMON

R-PQFP-G128

e0

20 mm

4718592 bit

MULTI-PORT SRAM

18

3

1

2

128

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP128,.63X.87,20

RECTANGULAR

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

225

2.5/3.3,3.3

Not Qualified

1.6 mm

.015 Amp

3.15 V

SRAMs

515 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

30

14 mm

7130SA100PF8 by Integrated Device Technology

7130SA100PF8

Integrated Device Technology

7130SA100PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it offers an access time of 100ns and features a low profile FLATPACK package. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

100 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7130SA55PF8 by Integrated Device Technology

7130SA55PF8

Integrated Device Technology

7130SA55PF8 by Integrated Device Technology is a multi-port SRAM with a memory density of 8192 bit. It operates asynchronously and has a max access time of 55 ns. This SRAM is commonly used in applications requiring fast and efficient data storage and retrieval.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7130SA55PFI8 by Integrated Device Technology

7130SA55PFI8

Integrated Device Technology

7130SA55PFI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192 bit memory density. Operating at 5V, it offers a max access time of 55ns and features a low profile FLATPACK package suitable for industrial applications. With an asynchronous operating mode and common I/O type, this SRAM is ideal for high-speed parallel data processing tasks.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.03 Amp

4.5 V

SRAMs

190 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71321SA55JI8 by Integrated Device Technology

71321SA55JI8

Integrated Device Technology

71321SA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can withstand industrial temperatures. Ideal for applications requiring fast data retrieval in harsh environments.

55 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.03 Amp

4.5 V

SRAMs

190 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7133LA25PFI8 by Integrated Device Technology

7133LA25PFI8

Integrated Device Technology

7133LA25PFI8 by Integrated Device Technology is a 2Kx16 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package with 0.5mm terminal pitch, suitable for industrial applications requiring fast and reliable memory storage. The device supports asynchronous operation and offers 3-STATE output characteristics.

25 ns

COMMON

S-PQFP-G100

e0

14 mm

32768 bit

MULTI-PORT SRAM

16

3

1

2

100

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.004 Amp

2 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

71342LA20J8 by Integrated Device Technology

71342LA20J8

Integrated Device Technology

71342LA20J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 20ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA20PF8 by Integrated Device Technology

71342LA20PF8

Integrated Device Technology

71342LA20PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 20ns and features a low profile flatpack package suitable for commercial temperature grade applications.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25J8 by Integrated Device Technology

71342LA25J8

Integrated Device Technology

71342LA25J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time, operating at 5V. It features a CMOS technology, 52 terminals in a square chip carrier package, and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25JI8 by Integrated Device Technology

71342LA25JI8

Integrated Device Technology

71342LA25JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time, operating at 5V. It features a 3-STATE output and can withstand industrial temperatures up to 85°C. Ideal for applications requiring fast and reliable parallel memory storage in harsh environments.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25PF8 by Integrated Device Technology

71342LA25PF8

Integrated Device Technology

71342LA25PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 25ns in commercial temperature grade. Ideal for applications requiring fast and reliable data storage with parallel interface.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25PFI8 by Integrated Device Technology

71342LA25PFI8

Integrated Device Technology

71342LA25PFI8 by Integrated Device Technology is a 4Kx8 SRAM with a memory density of 32768 bits. It operates at an industrial temperature grade range from -40 to 85°C, featuring a max access time of 25ns. Ideal for applications requiring fast and reliable data storage in harsh environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA35J8 by Integrated Device Technology

71342LA35J8

Integrated Device Technology

71342LA35J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA35PF8 by Integrated Device Technology

71342LA35PF8

Integrated Device Technology

Integrated Device Technology's 71342LA35PF8 is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA45J8 by Integrated Device Technology

71342LA45J8

Integrated Device Technology

71342LA45J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 45ns access time, operating at 5V. It features a square chip carrier package style and offers asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55J8 by Integrated Device Technology

71342LA55J8

Integrated Device Technology

71342LA55J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and offers parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55PF8 by Integrated Device Technology

71342LA55PF8

Integrated Device Technology

71342LA55PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package and operates in asynchronous mode with common I/O type. Ideal for applications requiring fast memory access such as networking equipment and industrial automation systems.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA70J8 by Integrated Device Technology

71342LA70J8

Integrated Device Technology

71342LA70J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 70ns and features a package style of CHIP CARRIER. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

70 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20J8 by Integrated Device Technology

71342SA20J8

Integrated Device Technology

71342SA20J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words, operating at 5V. It features an asynchronous mode, 3-STATE output characteristics, and a max access time of 20ns. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20PF8 by Integrated Device Technology

71342SA20PF8

Integrated Device Technology

71342SA20PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers an access time of 20ns and features a low profile flatpack package suitable for commercial applications requiring fast parallel data processing.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA25J8 by Integrated Device Technology

71342SA25J8

Integrated Device Technology

71342SA25J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a square chip carrier package style and offers asynchronous operation with common I/O type. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA25PF8 by Integrated Device Technology

71342SA25PF8

Integrated Device Technology

71342SA25PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and offers 3-STATE output characteristics. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA35J8 by Integrated Device Technology

71342SA35J8

Integrated Device Technology

71342SA35J8 by Integrated Device Technology is a 4Kx8 multi-port SRAM chip with 35ns access time and operates at a max supply voltage of 5.5V. It features a common I/O type, asynchronous operation mode, and offers 3-state output characteristics. Ideal for applications requiring fast memory access in commercial-grade temperature environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA35PF8 by Integrated Device Technology

71342SA35PF8

Integrated Device Technology

71342SA35PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA45J8 by Integrated Device Technology

71342SA45J8

Integrated Device Technology

71342SA45J8 by Integrated Device Technology is a 4Kx8 SRAM chip with asynchronous operation and common I/O type. It operates at 5V, has a max access time of 45ns, and is ideal for applications requiring fast memory access such as networking equipment or industrial automation systems.

45 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55J8 by Integrated Device Technology

71342SA55J8

Integrated Device Technology

71342SA55J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade devices.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55PF8 by Integrated Device Technology

71342SA55PF8

Integrated Device Technology

Integrated Device Technology's 71342SA55PF8 is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package, suitable for commercial temperature grades. Ideal for applications requiring fast and reliable asynchronous memory operations in a compact form factor.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA70J8 by Integrated Device Technology

71342SA70J8

Integrated Device Technology

71342SA70J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 70ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

70 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71V25761S183BGI8 by Integrated Device Technology

71V25761S183BGI8

Integrated Device Technology

71V25761S183BGI8 by Integrated Device Technology is a 128Kx36 CACHE SRAM with synchronous operation, 183 MHz clock frequency, and 3-STATE output. It has a package style of GRID ARRAY and is suitable for industrial applications requiring fast access times and high memory density.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e0

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

225

2.5,3.3

Not Qualified

2.36 mm

.035 Amp

3.14 V

SRAMs

350 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

20

14 mm

71V3557S75BGI8 by Integrated Device Technology

71V3557S75BGI8

Integrated Device Technology

71V3557S75BGI8 by Integrated Device Technology is a 128Kx36 ZBT SRAM with 7.5ns access time, operating at 3.3V. It features synchronous operation and a memory density of 4718592 bits, suitable for industrial applications requiring fast and reliable parallel memory access.

7.5 ns

R-PBGA-B119

e0

22 mm

4718592 bit

ZBT SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX36

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

225

Not Qualified

2.36 mm

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

20

14 mm

71V35761S183BGG8 by Integrated Device Technology

71V35761S183BGG8

Integrated Device Technology

71V35761S183BGG8 by Integrated Device Technology is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz clock frequency. It features a 3-STATE output and operates at a voltage of 3.3V, making it suitable for high-speed memory applications in commercial-grade devices.

3.3 ns

PIPELINED ARCHITECTURE

183 MHz

COMMON

R-PBGA-B119

e1

22 mm

4718592 bit

CACHE SRAM

36

3

1

119

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX36

3-STATE

PLASTIC/EPOXY

BGA

BGA119,7X17,50

RECTANGULAR

GRID ARRAY

PARALLEL

260

3.3

Not Qualified

2.36 mm

.03 Amp

3.14 V

SRAMs

340 mA

3.465 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1.27 mm

BOTTOM

30

14 mm