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71342LA35J8

Integrated Device Technology

71342LA35J8 by Integrated Device Technology

71342LA35J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

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Overview

Elevate your electronic designs with the 71342LA35J8 from Integrated Device Technology. As a leader in SRAM technology, IDT delivers top-quality products that provide reliable performance and seamless integration. This multi-port SRAM boasts a 4Kx8 organization, with a fast access time of 35ns to ensure quick data retrieval. Ideal for a wide range of applications, this chip carrier package offers a compact design and 3-state output characteristics, making it a versatile solution for your projects. Upgrade your systems with the value and benefits that only IDT can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making it a good choice for a variety of applications.

Surface Mount: YES

Allows for easy integration onto PCBs, saving space and simplifying assembly processes.

Package Shape: SQUARE

Square shape provides uniformity and ease of handling during manufacturing and installation.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient data retrieval and storage.

Input/Output Type: COMMON

Common input/output type simplifies system design and integration.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply ensures compatibility with commonly used power sources.

Power Supplies (V): 5

Consistent power supply ensures stable performance and reliability.

No. of Terminals: 52

Sufficient number of terminals for connecting to other components in a system.

Package Style (Meter): CHIP CARRIER

Chip carrier style offers compact form factor for space-constrained applications.

Maximum Operating Temperature: 70 °C

High operating temperature tolerance allows for use in a wide range of environments.

Organization: 4KX8

Organized as 4K words of 8 bits each, providing ample memory capacity for data storage.

Output Characteristics: 3-STATE

3-state output allows for multiple devices to share a common bus, increasing system flexibility.

Minimum Standby Voltage: 2 V

Low standby voltage minimizes power consumption during idle periods.

Minimum Operating Temperature: 0 °C

Capable of functioning in low-temperature environments without performance degradation.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and electrical conductivity for reliable connections.

Terminal Position: QUAD

Quad terminal position offers secure connection points for stable operation.

No. of Ports: 2

Dual ports provide increased data transfer capability for enhanced system performance.

Maximum Seated Height: 4.57 mm

Low profile design helps in compact PCB layouts and space-saving applications.

Width: 19.1262 mm

Standard width dimension for easy integration into existing electronic systems.

Minimum Supply Voltage (Vsup): 4.5 V

Low minimum supply voltage requirement enables operation in voltage-sensitive applications.

Maximum Time At Peak Reflow Temperature (s): 20

Allows for proper reflow soldering processes without damaging the component.

Peak Reflow Temperature °C: 225

High peak reflow temperature ensures reliable solder joints for robust connections.

Length: 19.1262 mm

Standard length dimension for compatibility with industry-standard mounting configurations.

Temperature Grade: COMMERCIAL

Suitable for commercial applications with moderate temperature requirements.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for efficient operation.

Parallel or Serial: PARALLEL

Parallel data transfer mode enables high-speed communication for rapid data exchange.

Terminal Form: J BEND

J bend terminal form provides secure mechanical connection points for stability during operation.

Maximum Supply Current: 220 mA

Low maximum supply current requirement for efficient power consumption.

No. of Words: 4096 words

Large number of words for storing data and instructions, increasing memory capacity.

Memory Width: 8

8-bit memory width allows for efficient data handling and processing.

Terminal Pitch: 1.27 mm

Standard terminal pitch for compatibility with common PCB layouts and designs.

No. of Words Code: 4K

Coded as 4K for easy identification and organization of memory capacity.

Moisture Sensitivity Level (MSL): 3

MSL 3 rating ensures safe storage and handling in moderate moisture environments.

Maximum Supply Voltage (Vsup): 5.5 V

High maximum supply voltage tolerance for reliable operation in varying voltage conditions.

Memory Density: 32768 bit

High memory density for storing large amounts of data in a compact package.

Memory IC Type: MULTI-PORT SRAM

Multi-port SRAM type offers simultaneous access to multiple memory locations for efficient data retrieval.

Maximum Standby Current: 0.0015 Amp

Low standby current consumption for energy-efficient operation.

Maximum Access Time: 35 ns

Fast access time for quick retrieval and processing of stored data.

Technical Specifications

SRAM 71342LA35J8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

35 ns

Additional Features:

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e0

Length:

19.1262 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

52

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.0015 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

19.1262 mm

Trade Compliance

71342LA35J8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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