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71342SA35PF

Integrated Device Technology

71342SA35PF by Integrated Device Technology

71342SA35PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 35ns and features a low profile flatpack package style. Ideal for applications requiring fast data access in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,197 parts In-Stock

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VNN

France . 4,919 parts In-Stock

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Nova Conductors

Japan . 87 parts In-Stock

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AZTECH Wire

Italy . 475 parts In-Stock

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$7.510

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Ampacity Inc.

Singapore . 799 parts In-Stock

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$24.000

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799

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Microchip USA

USA . 466 parts In-Stock

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Overview

Unlock the power of seamless data storage and fast retrieval with the 71342SA35PF by Integrated Device Technology. As a leading manufacturer in the industry, IDT ensures top-notch quality in every product. This Multi-Port SRAM boasts a memory density of 32768 bits and a lightning-fast maximum access time of 35 ns, making it perfect for high-performance applications. Experience the unmatched reliability and efficiency this SRAM offers, providing you with a competitive edge in your projects. Upgrade to the 71342SA35PF and elevate your performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Surface Mount: YES

Facilitates easy and efficient mounting on circuit boards.

Operating Mode: ASYNCHRONOUS

Allows for independent operations and data transfers, enhancing flexibility.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies, making it easy to integrate into various systems.

No. of Words: 4096 words

Offers a large memory capacity for storing data efficiently.

Maximum Access Time: 35 ns

Provides fast access to data, improving overall performance.

Technical Specifications

SRAM 71342SA35PF attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

35 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQFP-G64

JESD-609 Code:

e0

Length:

14 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

64

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP64,.66SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

240

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.015 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

260 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

71342SA35PF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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