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71342SA55J

Integrated Device Technology

71342SA55J by Integrated Device Technology

71342SA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

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Vyrian

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PC Components Company LLC

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ACDS - Activité Composants Distribution Service

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Ampacity Inc.

Singapore . 1,487 parts In-Stock

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AZTECH Wire

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QUARKTWIN TECHNOLOGY LTD

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Bastille Electronics

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Microchip USA

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Overview

Enhance your electronics projects with the 71342SA55J Multi-Port SRAM from Integrated Device Technology. Crafted with precision and expertise, this SRAM chip boasts a 4Kx8 organization and 32768-bit memory density, offering high performance and reliability for your applications. Perfect for parallel operations, this chip operates at a nominal 5V supply voltage with a fast 55ns access time. Trust in the quality and value of Integrated Device Technology to elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability of the product.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables independent access to each memory location, enhancing performance.

Nominal Supply Voltage / Vsup (V): 5

Stable 5V supply voltage ensures consistent operation of the SRAM.

No. of Terminals: 52

Ample number of terminals provide flexibility for interfacing with other components.

Maximum Operating Temperature: 70 °C

Operates reliably in a wide range of temperature conditions.

Organization: 4KX8

4KX8 organization offers a balance of capacity and speed for memory access.

Memory IC Type: MULTI-PORT SRAM

Multi-port SRAM allows for simultaneous access to multiple memory locations, improving efficiency.

Maximum Access Time: 55 ns

Fast access time ensures quick retrieval of data from memory.

Technical Specifications

SRAM 71342SA55J attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e0

Length:

19.1262 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

52

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.015 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

240 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

19.1262 mm

Trade Compliance

71342SA55J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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