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71342LA55J

Integrated Device Technology

71342LA55J by Integrated Device Technology

71342LA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can operate in asynchronous mode. Ideal for applications requiring fast memory access and common I/O type in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,924 parts In-Stock

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VNN

France . 3,796 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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AZTECH Wire

Italy . 207 parts In-Stock

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$5.639

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Ampacity Inc.

Singapore . 1,412 parts In-Stock

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$12.000

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Microchip USA

USA . 394 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Elevate your electronic designs with the 71342LA55J by Integrated Device Technology, a top-tier manufacturer known for delivering high-quality SRAM products. This versatile chip carrier offers a wide range of applications in the tech industry, boasting a 4Kx8 organization and 3-STATE output characteristics. With a nominal supply voltage of 5V and low standby current, this COMMERCIAL-grade multi-port SRAM ensures reliable performance and efficient power consumption. Upgrade your systems today with the cutting-edge technology of the 71342LA55J.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard and stable voltage level, minimizing the risk of damage to the device.

No. of Words: 4096 words

Offers a large memory capacity, making it suitable for storing and accessing a significant amount of data efficiently.

Technology: CMOS

Utilizes CMOS technology which is known for its low power consumption and high noise immunity, enhancing the efficiency and reliability of the product.

Maximum Access Time: 55 ns

Provides fast access to data, making it suitable for applications where speed is crucial.

Technical Specifications

SRAM 71342LA55J attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e0

Length:

19.1262 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

52

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.0015 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

200 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

19.1262 mm

Trade Compliance

71342LA55J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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