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71342LA20PF8

Integrated Device Technology

71342LA20PF8 by Integrated Device Technology

71342LA20PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 20ns and features a low profile flatpack package suitable for commercial temperature grade applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,588 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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VNN

France . 759 parts In-Stock

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759

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Ampacity Inc.

Singapore . 1,223 parts In-Stock

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$6.000

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AZTECH Wire

Italy . 308 parts In-Stock

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$17.817

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Microchip USA

USA . 324 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Elevate your electronics with the 71342LA20PF8 from Integrated Device Technology, a leader in quality semiconductor solutions. This Multi-Port SRAM offers a reliable and versatile memory option for a variety of applications. With a low profile package design and 4Kx8 organization, this product provides high performance and seamless integration. Experience the benefits of fast access times, common I/O type, and 3-state output characteristics. Trust Integrated Device Technology to deliver cutting-edge technology that enhances your projects and elevates your results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components of the SRAM, ensuring long-term reliability.

Surface Mount: YES

Surface mount capability allows for easy installation onto circuit boards, making the integration process more efficient.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in data transfer and communication, making the SRAM suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources and simplifies the design of the overall system.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the SRAM energy-efficient and reliable in noisy environments.

Technical Specifications

SRAM 71342LA20PF8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

20 ns

Additional Features:

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

Input/Output Type:

COMMON

JESD-30 Code:

S-PQFP-G64

JESD-609 Code:

e0

Length:

14 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

64

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP64,.66SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

240

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.0015 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

240 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

71342LA20PF8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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