Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.
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AS7C316098A-10BINTR
Alliance Memory
Alliance Memory's AS7C316098A-10BINTR is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and offers high memory density of 16Mbit. With parallel interface and CMOS technology, this IC is suitable for various embedded systems requiring fast and reliable data storage.
10 ns
R-PBGA-B48
8 mm
16777216 bit
STANDARD SRAM
16
3
1
48
1048576 words
1M
ASYNCHRONOUS
85 Cel
-40 Cel
1MX16
PLASTIC/EPOXY
LFBGA
RECTANGULAR
GRID ARRAY, LOW PROFILE, FINE PITCH
PARALLEL
1.4 mm
3.6 V
2.7 V
3.3
YES
CMOS
INDUSTRIAL
BALL
.75 mm
BOTTOM
6 mm
AS7C34096A-12JINTR
Alliance Memory's AS7C34096A-12JINTR is a 512Kx8 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it offers parallel interface, small outline package style, and moisture sensitivity level of 3.
12 ns
R-PDSO-J36
e3/e6
23.495 mm
4194304 bit
8
36
524288 words
512K
512KX8
SOJ
SMALL OUTLINE
3.7592 mm
3 V
J BEND
1.27 mm
DUAL
10.16 mm
AS7C38096A-10BIN
Alliance Memory's AS7C38096A-10BIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and CMOS technology. With parallel interface and 8388608-bit memory density, it suits high-speed data processing needs.
8388608 bit
1MX8
AS7C38096A-10TIN
Alliance Memory's AS7C38096A-10TIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 8388608 bits and operates in parallel mode with a package size of 18.415mm x 10.16mm x 1.2mm.
R-PDSO-G44
18.415 mm
44
TSOP2
SMALL OUTLINE, THIN PROFILE
260
1.2 mm
GULL WING
.8 mm
40
AS7C34098A-10TINTR
Alliance Memory's AS7C34098A-10TINTR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With a memory density of 4Mbit, this CMOS technology-based chip offers reliable parallel data storage.
262144 words
256K
256KX16
HM216514TTI5SE
Renesas Electronics
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words: 524288 words;
55 ns
18.41 mm
512KX16
NOT SPECIFIED
5.5 V
4.5 V
5
IS61NLP102418B-200TQLI
Integrated Silicon Solution
IS61NLP102418B-200TQLI by Integrated Silicon Solution is a 1MX18 SRAM with 1048576 words, 18874368 bit memory density, and 3 ns max access time. Ideal for industrial applications requiring fast synchronous operation in a compact FLATPACK package with low profile design.
3 ns
R-PQFP-G100
20 mm
18874368 bit
18
100
SYNCHRONOUS
1MX18
LQFP
FLATPACK, LOW PROFILE
1.6 mm
3.465 V
3.135 V
.65 mm
QUAD
14 mm
71V35761SA200BGGI
Integrated Device Technology
71V35761SA200BGGI by Integrated Device Technology is a 128KX36 CACHE SRAM with 3.3V supply voltage, operating synchronously at -40 to 85°C. Featuring a fast access time of 3.1 ns, it's ideal for industrial applications requiring high-speed parallel memory operations.
3.1 ns
PIPELINED
R-PBGA-B119
e1
4718592 bit
CACHE SRAM
119
131072 words
128K
128KX36
BGA
GRID ARRAY
TIN SILVER COPPER
71V35761SA200BGI8
CACHE SRAM; Peak Reflow Temperature (C): 225; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e0; Terminal Finish: TIN LEAD; Maximum Time At Peak Reflow Temperature (s): 20;
e0
225
TIN LEAD
20
71V3559S75BQI8
71V3559S75BQI8 by Integrated Device Technology is a CACHE SRAM with 256KX18 organization, operating at 3.3V. It features synchronous operation, thin profile grid array package style, and 7.5 ns max access time. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.
7.5 ns
R-PBGA-B165
15 mm
165
256KX18
TBGA
GRID ARRAY, THIN PROFILE
1 mm
13 mm
71024S25TYG8
STANDARD SRAM; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
e3
MATTE TIN
71024S25TYGI8
STANDARD SRAM; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
71024S25TYGI
STANDARD SRAM; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
CYD18S36V18-167BBAI
Cypress Semiconductor
CYD18S36V18-167BBAI by Cypress Semiconductor is a 512Kx36 MULTI-PORT SRAM with 167 MHz fCLK. Operating at -40 to 85 °C, it has a low profile GRID ARRAY package and consumes up to 780 mA at 1.5/1.8 Vsup. Ideal for industrial applications requiring fast access times and high memory density.
4 ns
PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V
167 MHz
COMMON
S-PBGA-B256
17 mm
MULTI-PORT SRAM
2
256
512KX36
3-STATE
LBGA
BGA256,16X16,40
SQUARE
GRID ARRAY, LOW PROFILE
1.5/1.8
Not Qualified
1.7 mm
.35 Amp
1.4 V
SRAMs
780 mA
1.58 V
1.42 V
1.5
M74HC670B1R
STMicroelectronics
STMicroelectronics M74HC670B1R is a 16-bit SRAM with 4x4 organization, operating at 2-6V. It features 280ns access time, CMOS technology, and 3-STATE output. Ideal for military applications due to its -55 to 125 °C temperature range and through-hole terminal form.
280 ns
R-PDIP-T16
16 bit
4
4 words
125 Cel
-55 Cel
4X4
NO
DIP
DIP16,.3
IN-LINE
2/6
5.1 mm
Other Memory ICs
6 V
2 V
4.5
MILITARY
THROUGH-HOLE
2.54 mm
7.62 mm
M74HC670M1R
STMicroelectronics M74HC670M1R is a 16-bit SRAM with 4x4 organization, operating at 2-6V. It features 280ns access time, operates in asynchronous mode, and has a temperature range of -55 to 125 °C. Ideal for military applications due to its small outline package and CMOS technology.
R-PDSO-G16
e4
9.9 mm
SOP
SOP16,.25
1.75 mm
NICKEL PALLADIUM GOLD
3.9 mm
SN74ACT2160-17FM
Texas Instruments
The Texas Instruments SN74ACT2160-17FM is a 16Kx4 CACHE TAG SRAM with 17 ns access time, operating at 5V. It features 3-STATE output characteristics and operates in asynchronous mode. Ideal for applications requiring fast memory access in commercial temperature environments.
17 ns
8K X 4 2-WAY CACHE ADDRESS COMPARATOR/DATA RAM
R-PQCC-J32
65536 bit
CACHE TAG SRAM
32
16384 words
16K
70 Cel
0 Cel
16KX4
QCCJ
LDCC32,.5X.6
CHIP CARRIER
.15 Amp
180 mA
5.25 V
4.75 V
COMMERCIAL
SN74ACT2152A-20FN
SN74ACT2152A-20FN by Texas Instruments is a 2Kx8 CACHE TAG SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. This SRAM chip is ideal for applications requiring fast memory access in commercial temperature environments.
20 ns
S-PQCC-J28
11.5062 mm
16384 bit
28
2048 words
2K
2KX8
LDCC28,.5SQ
4.57 mm
125 mA
SNJ54LS670FK
SNJ54LS670FK by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features a max clock frequency of 35MHz and has an access time of 45ns. Ideal for military applications requiring high-speed memory in a compact chip carrier package.
45 ns
35 MHz
S-CQCC-N20
8.89 mm
CERAMIC, METAL-SEALED COFIRED
QCCN
LCC20,.35SQ
MIL-PRF-38535
2.03 mm
.05 Amp
TTL
NO LEAD
X24C44P
Xicor
X24C44P by Xicor is a 256-bit NON-VOLATILE SRAM with 16x16 organization and 375ns access time. Operating at 5V, it features synchronous mode and 3-STATE output, suitable for commercial applications requiring reliable memory storage in a compact IN-LINE package.
375 ns
EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES
R-PDIP-T8
10.03 mm
256 bit
NON-VOLATILE SRAM
16 words
16X16
DIP8,.3
SERIAL
4.07 mm
.00005 Amp
10 mA
CY62256LL-70PC
CY62256LL-70PC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast memory access in a rectangular package.
70 ns
R-PDIP-T28
36.322 mm
262144 bit
32768 words
32K
32KX8
DIP28,.6
5.08 mm
.000005 Amp
50 mA
15.24 mm
CY62256L-70SNC
CY62256L-70SNC by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-STATE output characteristics. Ideal for commercial applications requiring fast memory access in a small outline package.
R-PDSO-G28
17.9324 mm
SOP28,.5
2.794 mm
.00002 Amp
Tin/Lead (Sn/Pb)
30
7.5057 mm
CY62256LL-70ZI
CY62256LL-70ZI by Cypress Semiconductor is a 32KX8 SRAM with 70 ns access time, operating at 5V. It features common I/O type, 3-STATE output characteristics, and GULL WING terminal form. Ideal for industrial applications requiring fast and reliable memory storage in a compact package.
11.8 mm
TSOP1
TSSOP28,.53,22
.55 mm
CY7C131-25JC
CY7C131-25JC by Cypress Semiconductor is a 1Kx8 SRAM with 25ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast memory access in commercial-grade environments.
25 ns
INTERRUPT FLAG
S-PQCC-J52
19.1262 mm
8192 bit
52
1024 words
1K
1KX8
LDCC52,.8SQ
.015 Amp
170 mA
M48Z2M1Y-70PL1
M48Z2M1Y-70PL1 by STMicroelectronics is a 2MX8 SRAM with 16777216 bit memory density, operating at 5V. It features an access time of 70ns, output enable function, and operates in parallel mode. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.
R-PDIP-T36
52.96 mm
2097152 words
2M
2MX8
DIP36,.6
9.52 mm
.008 Amp
140 mA
HT6256DC
Honeywell
Honeywell's HT6256DC is a 32Kx8 SRAM with 3-STATE output, operating at -55 to 225°C. It features a parallel interface, 50ns access time, and MILITARY temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.
50 ns
R-CDIP-T28
35.56 mm
225 Cel
4.445 mm
.00033 Amp
2.5 V
4 mA
MOS
DS1225Y-150-IND
Dallas Semiconductor
DS1225Y-150-IND by Dallas Semiconductor is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at 5V, has a max access time of 150ns, and is designed for industrial temperature grades. This rectangular package with 28 terminals in-line is ideal for applications requiring reliable data storage in harsh environments.
150 ns
NON-VOLATILE SRAM MODULE
8192 words
8K
8KX8
.005 Amp
85 mA
DS1225AD-200-IND
DS1225AD-200-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and is designed for industrial applications. The package style is in-line with through-hole terminals and a temperature range of -40 to 85°C.
200 ns
DS1225AD-70-IND
DS1225AD-70-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536 bit memory density. It operates at 5V, has a max access time of 70ns, and is designed for industrial applications requiring non-volatile memory storage.
DS1230Y-70-IND
DS1230Y-70-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.
10 YEARS DATA RETENTION PERIOD
DS1230Y-200-IND
DS1230Y-200-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 262144-bit memory density. Operating at 5V, it has a max access time of 200ns and can withstand industrial temperatures up to 85°C. Ideal for applications requiring reliable data storage in harsh environments.
DS1245AB-120-IND
DS1245AB-120-IND by Dallas Semiconductor is a 128Kx8 Non-Volatile SRAM Module with 120ns access time. Operating at 5V, it has a memory density of 1048576 bits and industrial temperature grade. Suitable for applications requiring reliable data storage in harsh environments.
120 ns
R-PDIP-T32
1048576 bit
128KX8
DIP32,.6
DS1245Y-70-IND
DS1245Y-70-IND by Dallas Semiconductor is a 128Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.
SN74AS870DWR
SN74AS870DWR by Texas Instruments is a 16x4 MULTI-PORT SRAM with 64-bit memory density. It operates at 5V, has a max access time of 15ns, and features 3-STATE output characteristics. This TTL technology chip is ideal for applications requiring fast and efficient parallel memory storage.
15 ns
DUAL MEMORY FOR MULTIBUS ARCHITECTURE
R-PDSO-G24
15.4 mm
64 bit
24
16X4
2.65 mm
7.5 mm
M48Z128-70PM1
M48Z128-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 70ns access time, operating at 5V. It features asynchronous mode, 3-state output characteristics, and a rectangular package shape. Ideal for applications requiring reliable memory storage in commercial temperature environments.
10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP
R-PDMA-P32
42.8 mm
MICROELECTRONIC ASSEMBLY
.004 Amp
105 mA
PIN/PEG
M48Z128Y-70PM1
M48Z128Y-70PM1 by STMicroelectronics is a 128Kx8 non-volatile SRAM module with 3-STATE output characteristics. Operating at 5V, it has an access time of 70ns and standby current of 0.004A. Ideal for commercial applications requiring reliable memory storage in a compact MICROELECTRONIC ASSEMBLY package.
M48Z128Y-85PM1
STMicroelectronics' M48Z128Y-85PM1 is a 128Kx8 non-volatile SRAM module with 3-STATE output, operating at 5V. With an access time of 85ns, it's ideal for applications requiring fast and reliable data storage in commercial-grade environments. The rectangular package style and asynchronous operation make it suitable for various microelectronic assemblies.
85 ns
M48Z512AY-70PM1
M48Z512AY-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with asynchronous operation and 3-STATE output. It operates at 5V, has a max access time of 70ns, and features non-volatile memory technology. This rectangular package with 32 terminals is ideal for commercial applications requiring reliable memory storage.
115 mA
M48Z512A-70PM1
M48Z512A-70PM1 by STMicroelectronics is a 512Kx8 SRAM module with 70ns access time and operates at 5V. It features a rectangular package shape, asynchronous mode, and 3-state output characteristics. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.
M48Z02-150PC1
M48Z02-150PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features asynchronous mode and common I/O type, suitable for commercial applications. With a memory density of 16384 bit, this CMOS technology-based IC offers parallel operation in a rectangular package style.
R-PDIP-T24
34.545 mm
DIP24,.6
9.65 mm
.003 Amp
80 mA
M48Z02-200PC1
M48Z02-200PC1 by STMicroelectronics is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It features an asynchronous mode, parallel interface, and max access time of 200ns. Ideal for applications requiring reliable data storage in commercial temperature environments.
BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION
M48Z02-70PC1
M48Z02-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 5V supply voltage, operating in asynchronous mode. It features 3-STATE output characteristics and offers 16384 bits memory density. Ideal for applications requiring common I/O type and parallel operation at temperatures up to 70°C.
M48Z12-200PC1
STMicroelectronics M48Z12-200PC1 is a 2Kx8 non-volatile SRAM module with 3-state output, operating at 5V. It has a max access time of 200ns and standby current of 0.003Amp. Ideal for applications requiring reliable memory storage in commercial temperature environments.
M48Z12-70PC1
M48Z12-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features a rectangular package style, asynchronous mode, and common I/O type. Ideal for applications requiring standard SRAM memory technology in commercial temperature grades.
IDT71024S15TYI
IDT71024S15TYI is a 128Kx8 SRAM with 15ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for industrial applications requiring fast and reliable memory storage. This small outline package offers parallel interface with 32 terminals in a rectangular shape.
R-PDSO-J32
20.96 mm
SOJ32,.34
3.759 mm
.01 Amp
155 mA
LH5164A-10L
Sharp Corporation
LH5164A-10L by Sharp Corp is an 8Kx8 SRAM with 100ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Ideal for commercial applications requiring fast memory access in a compact IN-LINE package.
100 ns
36 mm
-10 Cel
5.2 mm
71V35761S183BGGI8
71V35761S183BGGI8 by Integrated Device Technology is a 128Kx36 CACHE SRAM with synchronous operation, 183 MHz clock frequency, and 3.3 ns access time. Ideal for industrial applications requiring high-speed data processing in compact systems.
3.3 ns
PIPELINED ARCHITECTURE
183 MHz
22 mm
BGA119,7X17,50
2.36 mm
.035 Amp
3.14 V
350 mA
71V35761S183BGGI
Integrated Device Technology's 71V35761S183BGGI is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz. It features a 3-STATE output and operates at an industrial temperature range of -40 to 85 °C. Suitable for applications requiring fast access times and high memory density.
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