Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.
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CY14MB256J2-SXI
Cypress Semiconductor
CY14MB256J2-SXI by Cypress Semiconductor is a 32Kx8 NON-VOLATILE SRAM with 262144-bit memory density. Operating at 3V, it features SYNCHRONOUS mode and SERIAL interface. Ideal for industrial applications, this SRAM has a small outline package and operates b/w -40 to 85°C.
R-PDSO-G8
e4
4.889 mm
262144 bit
NON-VOLATILE SRAM
8
3
1
32768 words
32K
SYNCHRONOUS
85 Cel
-40 Cel
32KX8
PLASTIC/EPOXY
SOP
SOP8,.25
RECTANGULAR
SMALL OUTLINE
SERIAL
260
Not Qualified
1.727 mm
.00015 Amp
SRAMs
3 mA
3.6 V
2.7 V
YES
CMOS
INDUSTRIAL
NICKEL PALLADIUM GOLD
GULL WING
1.27 mm
DUAL
3.8985 mm
CY62147EV30LL-45B2XA
CY62147EV30LL-45B2XA by Cypress Semiconductor is a 256Kx16 SRAM with 3.6V max supply voltage, 45ns access time, and industrial temperature grade. It features a very thin profile grid array package for common asynchronous applications in parallel memory systems.
45 ns
COMMON
R-PBGA-B48
e1
8 mm
4194304 bit
STANDARD SRAM
16
48
262144 words
256K
ASYNCHRONOUS
256KX16
3-STATE
VFBGA
BGA48,6X8,30
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
PARALLEL
2.5/3.3
1 mm
.000007 Amp
1.5 V
20 mA
2.2 V
TIN SILVER COPPER
BALL
.75 mm
BOTTOM
6 mm
M48Z18-100PC1
STMicroelectronics
M48Z18-100PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 100ns. This rectangular package SRAM is commonly used in commercial applications requiring reliable, low-power memory solutions.
100 ns
BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION
R-PDIP-T28
e3
39.625 mm
65536 bit
NON-VOLATILE SRAM MODULE
28
8192 words
8K
70 Cel
0 Cel
8KX8
DIP
IN-LINE
5
9.65 mm
.003 Amp
80 mA
5.5 V
4.5 V
NO
COMMERCIAL
MATTE TIN
THROUGH-HOLE
2.54 mm
15.24 mm
M48Z35-70PC1
M48Z35-70PC1 by STMicroelectronics is a 32Kx8 SRAM with 70ns access time and operates at 5V. It features a rectangular package style, asynchronous mode, and 3-STATE output characteristics. Ideal for commercial applications requiring reliable memory storage in devices with parallel data processing needs.
70 ns
SRAM STD
DIP28,.6
50 mA
4.75 V
M48Z58-70PC1
M48Z58-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. Operating at 5V, it features a max access time of 70ns and output enable function. This CMOS technology-based IC is ideal for applications requiring reliable data storage in commercial temperature environments.
Matte Tin (Sn)
M48Z58Y-70PC1
M48Z58Y-70PC1 by STMicroelectronics is an 8Kx8 non-volatile SRAM with a memory density of 65536 bits. It operates at a nominal voltage of 5V and has an asynchronous operating mode with a max access time of 70ns. This rectangular package SRAM is commonly used in applications requiring reliable data storage and retrieval in commercial temperature environments.
IDT71256SA20Y
Integrated Device Technology
IDT71256SA20Y by Integrated Device Technology is a 32Kx8 SRAM with 20ns access time, operating at 5V. It features a small outline package and offers common I/O type with 3-STATE output characteristics. Ideal for applications requiring fast and reliable memory storage in commercial temperature environments.
20 ns
R-PDSO-J28
e0
17.9324 mm
SOJ
SOJ28,.34
225
3.556 mm
.015 Amp
145 mA
TIN LEAD
J BEND
30
7.5184 mm
CY7C09099V-12AC
CY7C09099V-12AC by Cypress Semiconductor is a 128KX8 MULTI-PORT SRAM with synchronous operation and 3.3V power supply. It is commonly used in applications requiring high-speed data storage and retrieval, such as networking equipment and telecommunications systems.
25 ns
FLOW-THROUGH OR PIPELINED ARCHITECTURE
50 MHz
S-PQFP-G100
14 mm
1048576 bit
MULTI-PORT SRAM
2
100
131072 words
128K
128KX8
LFQFP
QFP100,.63SQ,20
SQUARE
FLATPACK, LOW PROFILE, FINE PITCH
3.3
1.6 mm
.00025 Amp
3 V
205 mA
.5 mm
QUAD
DS1220Y-100-IND
Dallas Semiconductor
DS1220Y-100-IND by Dallas Semiconductor is a 2Kx8 Non-Volatile SRAM module with 100ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable memory storage in harsh environments.
R-PDIP-T24
16384 bit
24
2048 words
2K
2KX8
DIP24,.6
.004 Amp
85 mA
Tin/Lead (Sn/Pb)
DS1250Y-70-IND
DS1250Y-70-IND by Dallas Semiconductor is a 512Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and industrial temperature grade. Ideal for applications requiring non-volatile memory storage in industrial environments.
10 YEAR DATA RETENTION PERIOD
R-XDIP-T32
32
524288 words
512K
512KX8
UNSPECIFIED
DIP32,.6
.005 Amp
CY7C024AV-25AC
CY7C024AV-25AC by Cypress Semiconductor is a 4Kx16 SRAM with 3.3V supply, operating at 0-70°C. It features 25ns access time, 100 terminals in a square package, and is ideal for multi-port memory applications.
4096 words
4K
4KX16
.00005 Amp
2 V
165 mA
CY7C09349A-12AC
CY7C09349A-12AC by Cypress Semiconductor is a 4Kx18 SRAM with synchronous operation and 3-STATE output. It operates at 5V, has a max access time of 25ns, and is ideal for applications requiring multi-port memory solutions in commercial-grade environments.
73728 bit
18
4KX18
.0005 Amp
300 mA
IDT71256SA25YI
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: SOJ; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;
Tin/Lead (Sn85Pb15)
M48Z129V-85PM1
M48Z129V-85PM1 by STMicroelectronics is a 128Kx8 SRAM module with asynchronous operation, 3.3V supply, and 85ns access time. It is ideal for applications requiring non-volatile memory storage in commercial temperature environments.
85 ns
R-PDIP-T32
42.8 mm
9.52 mm
M48Z512AV-85PM1
STMicroelectronics M48Z512AV-85PM1 is a 512Kx8 non-volatile SRAM module with 85ns access time, operating at 3.3V. It has a rectangular package shape, through-hole terminal form, and is suitable for commercial temperature grade applications.
IS66WVE4M16EALL-70BLI
Integrated Silicon Solution
IS66WVE4M16EALL-70BLI by Integrated Silicon Solution is a 4MX16 Pseudo Static RAM with a memory density of 67108864 bit. It operates in asynchronous mode with a max access time of 70 ns and has a min standby voltage of 1.7 V. This SRAM is commonly used in industrial applications that require high-speed data storage and retrieval.
67108864 bit
PSEUDO STATIC RAM
4194304 words
4M
4MX16
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
1.2 mm
1.7 V
25 mA
1.95 V
23A256-I/SN
Microchip Technology
23A256-I/SN by Microchip Technology is a 32Kx8 SRAM with 16 MHz clock frequency, operating at 1.8V. It features separate I/O, synchronous operation, and 3-STATE output. Ideal for industrial applications requiring high-speed memory access in a small outline package.
16 MHz
SEPARATE
4.9 mm
SOP8,.23
1.8
1.75 mm
.000001 Amp
10 mA
40
3.9 mm
23A640-I/P
23A640-I/P by Microchip Technology is an 8Kx8 SRAM with 16 MHz clock frequency, operating at -40 to 85 °C. It features a CMOS technology, serial interface, and 65536 bit memory density. Ideal for industrial applications requiring reliable synchronous memory solutions.
R-PDIP-T8
9.271 mm
DIP8,.3
TS 16949
5.334 mm
7.62 mm
23A640-I/SN
Microchip Technology's 23A640-I/SN is an 8Kx8 SRAM with a memory density of 65536 bit. Operating at 1.8V, it offers a max clock frequency of 16MHz and features synchronous operation. Ideal for industrial applications requiring high-speed data storage in compact spaces.
23A640-I/ST
Microchip Technology's 23A640-I/ST is an 8Kx8 SRAM with a max clock frequency of 16MHz. Operating at 1.8V, it features separate I/O and offers a memory density of 65536 bits. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.
4.4 mm
TSSOP
TSSOP8,.25
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
.65 mm
3 mm
23K256-I/P
23K256-I/P by Microchip Technology is a 32KX8 SRAM with a max clock frequency of 20 MHz. It operates at a nominal voltage of 3V and has a memory density of 262144 bit. This memory IC type is commonly used in industrial applications requiring high-speed data storage.
20 MHz
3/3.3
.000004 Amp
CY7C1041CV33-12ZSXE
CY7C1041CV33-12ZSXE by Cypress Semiconductor is a 256KX16 SRAM with 3.3V supply, operating at -40 to 125 °C. It features 12 ns access time, 44 terminals in small outline package for automotive applications. With common I/O type and parallel technology, it offers 4194304 bit memory density.
12 ns
R-PDSO-G44
18.415 mm
44
125 Cel
TSOP2
TSOP44,.46,32
SMALL OUTLINE, THIN PROFILE
AEC-Q100
1.194 mm
120 mA
AUTOMOTIVE
Nickel/Palladium/Gold (Ni/Pd/Au)
.8 mm
20
10.16 mm
MT45W4MW16PCGA-70IT
Micron Technology
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;
1.8,1.8/3
.00014 Amp
Other Memory ICs
Tin/Silver/Copper (Sn/Ag/Cu)
MT45W4MW16PCGA-70LWT
PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 25 mA;
-30 Cel
.00012 Amp
OTHER
IS61C25616AL-10KLI
IS61C25616AL-10KLI by Integrated Silicon Solution is a 256KX16 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.
10 ns
R-PDSO-J44
28.575 mm
3.75 mm
10
CY7C1020CV33-15ZSXET
CY7C1020CV33-15ZSXET by Cypress Semiconductor is a 32KX16 SRAM with 3.3V supply, 15ns access time, and 44 terminals. Ideal for automotive applications due to AEC-Q100 screening level and small outline package. Operating in asynchronous mode, it offers common I/O type and 3-STATE output characteristics.
15 ns
524288 bit
32KX16
.01 Amp
3.63 V
2.97 V
CY7C1021BN-15ZXIT
CY7C1021BN-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.
65536 words
64K
64KX16
130 mA
CY7C1021BN-15VXIT
CY7C1021BN-15VXIT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time. Operating at 5V, it features a small outline package and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.
3.7592 mm
CY7C1019CV33-12ZXCT
CY7C1019CV33-12ZXCT by Cypress: 128KX8 SRAM with 3.3V, 12ns access time, and 1.27mm terminal pitch. Ideal for commercial applications requiring fast, asynchronous memory operations in a small outline package.
R-PDSO-G32
20.95 mm
CY7C1021BN-15VXCT
CY7C1021BN-15VXCT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It is used in commercial applications, featuring a small outline package and J bend terminal form for surface mount assembly.
CY7C1518KV18-250BZXC
DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 250 MHz;
.45 ns
PIPELINED ARCHITECTURE
250 MHz
R-PBGA-B165
15 mm
75497472 bit
DDR SRAM
165
4MX18
LBGA
BGA165,11X15,40
GRID ARRAY, LOW PROFILE
1.5/1.8,1.8
1.4 mm
430 mA
1.9 V
13 mm
BQ4010LYMA-70N
Texas Instruments
BQ4010LYMA-70N by Texas Instruments is an 8Kx8 SRAM with 3.3V supply, operating asynchronously at -40 to 85°C. It features a parallel interface, 70ns access time, and industrial temperature grade. Ideal for non-volatile memory applications in microelectronic assemblies due to its compact size and low power consumption of 30mA max.
R-XDMA-T28
37.72 mm
MICROELECTRONIC ASSEMBLY
NOT SPECIFIED
9.53 mm
.001 Amp
30 mA
CY62256VNLL-70ZIT
CY62256VNLL-70ZIT by Cypress is a 32Kx8 SRAM with 70ns access time, operating at 3V. It has a small outline package suitable for industrial applications. This CMOS memory IC offers parallel operation and 262144-bit memory density.
R-PDSO-G28
11.8 mm
TSOP1
.55 mm
CY7C1480V33-200AXCT
CY7C1480V33-200AXCT by Cypress Semiconductor is a 3.3V CACHE SRAM with 2MX36 organization, operating synchronously at 70°C. It has a memory density of 75497472 bit and offers fast access time of 3 ns. Ideal for applications requiring high-speed data storage in commercial-grade environments.
3 ns
R-PQFP-G100
e3/e4
20 mm
CACHE SRAM
36
2097152 words
2M
2MX36
LQFP
FLATPACK, LOW PROFILE
3.135 V
MATTE TIN/NICKEL PALLADIUM GOLD
MT45W2MW16BGB-701IT
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;
SYNCHRONOUS BURST MODE ALSO POSSIBLE
R-PBGA-B54
33554432 bit
54
2MX16
BGA54,6X9,30
GRID ARRAY
1.8,1.8/3.3
.00011 Amp
40 mA
MT45W2MW16PGA-70IT
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;
CD74HCT670M96G4
CD74HCT670M96G4 by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It has a max access time of 53ns and operates in parallel mode. This memory IC is ideal for military-grade applications requiring fast and reliable data storage.
53 ns
R-PDSO-G16
9.9 mm
16 bit
4
4 words
-55 Cel
4X4
SOP16,.25
2/6
MILITARY
CD74HCT670MTG4
STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
MT45W8MW16BGX-856AT
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;
10 mm
134217728 bit
8388608 words
8M
105 Cel
8MX16
IS61WV51216BLL-10MLI
IS61WV51216BLL-10MLI by Integrated Silicon Solution is a 512Kx16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and offers common I/O type for industrial applications requiring fast and reliable memory storage.
11 mm
8388608 bit
512KX16
.02 Amp
1.2 V
95 mA
2.4 V
9 mm
CY7C1061BV33-8ZXI
CY7C1061BV33-8ZXI by Cypress Semiconductor is a 3.3V, 1MX16 SRAM with 8ns access time. It operates in industrial temperature range (-40 to 85°C) and has a memory density of 16777216 bits. Ideal for applications requiring fast parallel memory access in compact designs.
8 ns
R-PDSO-G54
22.415 mm
16777216 bit
1048576 words
1M
1MX16
DS38464-070
Maxim Integrated
NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 72; Package Code: SIMM; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;
R-XSMA-N72
2621440 bit
72
64KX40
SIMM
NO LEAD
SINGLE
AS6C4008-55BIN
Alliance Memory
Alliance Memory's AS6C4008-55BIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and common I/O type. Ideal for industrial applications requiring fast and reliable memory performance.
55 ns
R-PBGA-B36
BGA36,6X8,30
3/5
.00003 Amp
60 mA
AS6C4008-55STIN
Alliance Memory's AS6C4008-55STIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package with dual terminals and common I/O type. With low standby voltage of 2V and power consumption of 60mA, it offers reliable performance in various electronic devices.
LSSOP
TSSOP32,.56,20
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
1.25 mm
AS6C4008-55TIN
Alliance Memory's AS6C4008-55TIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 524288 words and parallel interface, it offers reliable memory storage in compact systems.
18.4 mm
TSSOP32,.8,20
AS6C1008-55TIN
Alliance Memory's AS6C1008-55TIN is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 131072 words and 1048576-bit memory density, this CMOS technology-based chip offers reliable performance in various electronic devices.
IS61WV25616BLS-25TLI
IS61WV25616BLS-25TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features 25ns max access time, 4194304-bit memory density, and supports asynchronous operation. Ideal for applications requiring fast and reliable data storage in harsh environments.
.009 Amp
MT45W2MW16BGB-701ITTR
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