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SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.

SRAM

Available Parts 561

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
CY7C131E-15NXI by Cypress Semiconductor

CY7C131E-15NXI

Cypress Semiconductor

CY7C131E-15NXI by Cypress Semiconductor is a 1Kx8 SRAM with 15ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact square package.

15 ns

COMMON

S-PQFP-G52

e3

10 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

260

5

Not Qualified

2.5 mm

.015 Amp

4.5 V

SRAMs

305 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10 mm

CY7C131E-55JXC by Cypress Semiconductor

CY7C131E-55JXC

Cypress Semiconductor

CY7C131E-55JXC by Cypress Semiconductor is a 1Kx8 SRAM chip with 55ns access time, operating at 5V. It features asynchronous mode, 3-state output, and common I/O type. Ideal for commercial applications requiring fast memory access in a compact square chip carrier package.

55 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C136E-25JXC by Cypress Semiconductor

CY7C136E-25JXC

Cypress Semiconductor

CY7C136E-25JXC by Cypress Semiconductor is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

19.1262 mm

CY7C136E-25NXC by Cypress Semiconductor

CY7C136E-25NXC

Cypress Semiconductor

CY7C136E-25NXC by Cypress Semiconductor is a 2Kx8 MULTI-PORT SRAM with 25 ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G52

e3

10 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

5

Not Qualified

2.5 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10 mm

AS6C4008A-55ZIN by Alliance Memory

AS6C4008A-55ZIN

Alliance Memory

Alliance Memory's AS6C4008A-55ZIN is a 512Kx8 SRAM with 55ns access time, operating at 3.6V max voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and gull wing terminals, this memory IC offers reliable performance in harsh environments.

55 ns

R-PDSO-G32

e3/e6

20.95 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

40

11.76 mm

23A1024-I/P by Microchip Technology

23A1024-I/P

Microchip Technology

Microchip Technology's 23A1024-I/P is a CMOS SRAM with 128KX8 organization, operating at 1.8/2V. It features synchronous operation, 20MHz clock frequency, and 131072 words capacity. Ideal for industrial applications requiring reliable memory storage in a compact IN-LINE package style.

20 MHz

COMMON/SEPARATE

R-PDIP-T8

e3

9.271 mm

1048576 bit

STANDARD SRAM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/2

Not Qualified

TS 16949

5.334 mm

.000004 Amp

1.7 V

SRAMs

10 mA

2.2 V

1.7 V

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23LCV512-I/P by Microchip Technology

23LCV512-I/P

Microchip Technology

23LCV512-I/P by Microchip Technology is a 64KX8 SRAM with 20 MHz clock frequency, operating at -40 to 85 °C. It features a serial interface, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed synchronous memory in a compact IN-LINE package.

20 MHz

COMMON

R-PDIP-T8

e3

9.271 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5.334 mm

.00001 Amp

2.5 V

10 mA

5.5 V

2.5 V

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

IS61WV6416EEBLL-10TLI by Integrated Silicon Solution

IS61WV6416EEBLL-10TLI

Integrated Silicon Solution

IS61WV6416EEBLL-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 10ns access time, operating at 3.3V. It features a small outline package, suitable for industrial temperature grades. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

10 ns

COMMON

R-PDSO-G44

18.41 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.004 Amp

2 V

SRAMs

25 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

AS7C316096A-10TINTR by Alliance Memory

AS7C316096A-10TINTR

Alliance Memory

Alliance Memory's AS7C316096A-10TINTR is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, common I/O type, and 3-state output characteristics.

10 ns

COMMON

R-PDSO-G48

e3/e6

18.4 mm

16777216 bit

STANDARD SRAM

8

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.04 Amp

1.5 V

SRAMs

160 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

AS7C316096A-10TIN by Alliance Memory

AS7C316096A-10TIN

Alliance Memory

Alliance Memory's AS7C316096A-10TIN is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, 48 terminals, and common I/O type. With a memory density of 16Mbit, this CMOS technology-based chip offers reliable performance in various electronic devices.

10 ns

COMMON

R-PDSO-G48

e3/e6

18.4 mm

16777216 bit

STANDARD SRAM

8

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.04 Amp

1.5 V

SRAMs

160 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

AS6C3216-55TIN by Alliance Memory

AS6C3216-55TIN

Alliance Memory

Alliance Memory's AS6C3216-55TIN is a 2MX16 SRAM with 55 ns access time, operating at 3V. Ideal for industrial applications, it offers a memory density of 33554432 bits and features a small outline package with thin profile. With common I/O type and asynchronous operation, this CMOS technology-based SRAM is suitable for various parallel memory applications.

55 ns

8

COMMON

R-PDSO-G48

e3/e6

18.4 mm

33554432 bit

STANDARD SRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.002 Amp

1.2 V

SRAMs

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

AS7C316098A-10TIN by Alliance Memory

AS7C316098A-10TIN

Alliance Memory

Alliance Memory's AS7C316098A-10TIN is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and offers 3-state output capability. With a max supply voltage of 3.6V, this CMOS technology memory chip supports parallel operation with common I/O type.

10 ns

COMMON

R-PDSO-G48

e3/e6

18.4 mm

16777216 bit

STANDARD SRAM

16

3

1

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

YES

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

.04 Amp

1.5 V

160 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

40

12 mm

IS61LPS25618EC-200TQLI by Integrated Silicon Solution

IS61LPS25618EC-200TQLI

Integrated Silicon Solution

IS61LPS25618EC-200TQLI by Integrated Silicon Solution is a 256KX18 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a low profile FLATPACK package and operates in industrial temperature range. Ideal for applications requiring fast access time and high memory density.

3.1 ns

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

4718592 bit

CACHE SRAM

18

3

1

100

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.085 Amp

3.14 V

SRAMs

220 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10

14 mm

IS61VPS204836B-250B3LI by Integrated Silicon Solution

IS61VPS204836B-250B3LI

Integrated Silicon Solution

IS61VPS204836B-250B3LI by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 250 MHz clock frequency, 2.5V supply voltage, and 2.6 ns access time. It is ideal for industrial applications requiring fast and synchronous memory operations in a compact GRID ARRAY package with thin profile design.

2.6 ns

250 MHz

COMMON

R-PBGA-B165

e1

15 mm

75497472 bit

CACHE SRAM

36

3

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.5

Not Qualified

1.2 mm

2.38 V

SRAMs

2.625 V

2.375 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10

13 mm

UPD46184182BF1-E40-EQ1 by Renesas Electronics

UPD46184182BF1-E40-EQ1

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Access Time: .45 ns;

.45 ns

250 MHz

COMMON

R-PBGA-B165

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.5/1.8,1.8

Not Qualified

1.46 mm

.38 Amp

1.7 V

SRAMs

430 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

13 mm

UPD46184184BF1-E40-EQ1-A by Renesas Electronics

UPD46184184BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;

.45 ns

250 MHz

COMMON

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.38 Amp

1.7 V

SRAMs

400 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184185BF1-E33Y-EQ1-A by Renesas Electronics

UPD46184185BF1-E33Y-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-609 Code: e6;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184185BF1-E40-EQ1-A by Renesas Electronics

UPD46184185BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words: 1048576 words;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.38 Amp

1.7 V

SRAMs

480 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184362BF1-E33-EQ1-A by Renesas Electronics

UPD46184362BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 512KX36;

.45 ns

300 MHz

COMMON

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.43 Amp

1.7 V

SRAMs

510 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184362BF1-E40-EQ1-A by Renesas Electronics

UPD46184362BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185092BF1-E40-EQ1-A by Renesas Electronics

UPD46185092BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 2MX9;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185094BF1-E33-EQ1-A by Renesas Electronics

UPD46185094BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185094BF1-E40-EQ1-A by Renesas Electronics

UPD46185094BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.46 mm;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185182BF1-E33-EQ1-A by Renesas Electronics

UPD46185182BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Width: 18;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185182BF1-E40-EQ1-A by Renesas Electronics

UPD46185182BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 18874368 bit;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185184BF1-E40Y-EQ1-A by Renesas Electronics

UPD46185184BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX18;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185362BF1-E33-EQ1-A by Renesas Electronics

UPD46185362BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185364BF1-E40-EQ1-A by Renesas Electronics

UPD46185364BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN BISMUTH;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185364BF1-E40Y-EQ1-A by Renesas Electronics

UPD46185364BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Technology: CMOS;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364182BF1-E33-EQ1-A by Renesas Electronics

UPD46364182BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Width: 18;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364362BF1-E33-EQ1-A by Renesas Electronics

UPD46364362BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX36;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364362BF1-E40Y-EQ1-A by Renesas Electronics

UPD46364362BF1-E40Y-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.46 mm;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364365BF1-E40-EQ1-A by Renesas Electronics

UPD46364365BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365084BF1-E40-EQ1-A by Renesas Electronics

UPD46365084BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

.45 ns

R-PBGA-B165

e6

15 mm

33554432 bit

QDR SRAM

8

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365092BF1-E40-EQ1-A by Renesas Electronics

UPD46365092BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 37748736 bit;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

9

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365094BF1-E40-EQ1-A by Renesas Electronics

UPD46365094BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN BISMUTH;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

9

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365182BF1-E40-EQ1-A by Renesas Electronics

UPD46365182BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365184BF1-E33-EQ1-A by Renesas Electronics

UPD46365184BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Access Time: .45 ns;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365184BF1-E33Y-EQ1-A by Renesas Electronics

UPD46365184BF1-E33Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Width: 13 mm;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365184BF1-E40Y-EQ1-A by Renesas Electronics

UPD46365184BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365362BF1-E33-EQ1-A by Renesas Electronics

UPD46365362BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX36;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365362BF1-E40Y-EQ1-A by Renesas Electronics

UPD46365362BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365364BF1-E40-EQ1-A by Renesas Electronics

UPD46365364BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

CY62256NLL-55ZXIT by Cypress Semiconductor

CY62256NLL-55ZXIT

Cypress Semiconductor

CY62256NLL-55ZXIT by Cypress Semiconductor is a 32KX8 SRAM with a max access time of 55 ns. It operates asynchronously at a nominal voltage of 5V and has a small outline, thin profile package style. It is commonly used in industrial applications requiring high-speed memory storage.

55 ns

COMMON

R-PDSO-G28

e4

11.8 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.00001 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.55 mm

DUAL

30

8 mm

CY62256NLL-70SNXCT by Cypress Semiconductor

CY62256NLL-70SNXCT

Cypress Semiconductor

CY62256NLL-70SNXCT by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

70 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

.000005 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

20

7.5057 mm

CY7C1049DV33-10ZSXIT by Cypress Semiconductor

CY7C1049DV33-10ZSXIT

Cypress Semiconductor

CY7C1049DV33-10ZSXIT by Cypress Semiconductor is a 512Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a parallel interface, 10ns access time, and low standby current of 0.01Amp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

8

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.01 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

W968D6DAGX7I by Winbond Electronics

W968D6DAGX7I

Winbond Electronics

Winbond Electronics' W968D6DAGX7I is a 16Mx16 SRAM with 1.8V supply, 70ns access time, and 3-STATE output. Ideal for industrial applications, it features a very thin profile grid array package with common I/O type and asynchronous operation mode.

70 ns

COMMON

R-PBGA-B54

8 mm

268435456 bit

PSEUDO STATIC RAM

16

1

1

54

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

YES

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

Not Qualified

1 mm

.0004 Amp

1.7 V

Other Memory ICs

40 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

AS7C1024B-15JCNTR by Alliance Memory

AS7C1024B-15JCNTR

Alliance Memory

Alliance Memory's AS7C1024B-15JCNTR is a 128Kx8 SRAM with 15ns access time, ideal for commercial applications. Operating at 5V, it offers 1048576-bit memory density and features asynchronous mode. With a small outline package style, it is suitable for surface mount designs in various electronic devices.

15 ns

R-PDSO-J32

20.995 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.7084 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

10.16 mm