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SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.

SRAM

Available Parts 561

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
IDT71016S12PHGI by Integrated Device Technology

IDT71016S12PHGI

Integrated Device Technology

IDT71016S12PHGI by Integrated Device Technology is a 64KX16 SRAM with an operating mode of asynchronous and common input/output type. It has a max access time of 12 ns and is commonly used in industrial applications.

12 ns

COMMON

R-PDSO-G44

e3

18.41 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.01 Amp

4.5 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.8 mm

DUAL

30

10.16 mm

IDT71016S12PHGI8 by Integrated Device Technology

IDT71016S12PHGI8

Integrated Device Technology

IDT71016S12PHGI8 by Integrated Device Technology is a 64Kx16 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and is designed for industrial applications requiring fast and reliable memory storage. With a compact rectangular package style and surface-mount capability, it offers high performance in a small footprint.

12 ns

COMMON

R-PDSO-G44

e3

18.41 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.01 Amp

4.5 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.8 mm

DUAL

30

10.16 mm

IDT71124S12YGI by Integrated Device Technology

IDT71124S12YGI

Integrated Device Technology

IDT71124S12YGI by Integrated Device Technology is a 128Kx8 SRAM with asynchronous operation, 3-STATE output, and 12 ns access time. It is ideal for industrial applications requiring fast and reliable memory storage in a small outline package. With a supply voltage range of 4.5V to 5.5V, this CMOS technology-based SRAM offers high performance in harsh environments.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.683 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

J BEND

1.27 mm

DUAL

30

10.16 mm

IDT71124S12YGI8 by Integrated Device Technology

IDT71124S12YGI8

Integrated Device Technology

IDT71124S12YGI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.683 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

J BEND

1.27 mm

DUAL

30

10.16 mm

IDT71V124SA20PHGI by Integrated Device Technology

IDT71V124SA20PHGI

Integrated Device Technology

IDT71V124SA20PHGI by Integrated Device Technology is a 128Kx8 SRAM with 3.3V supply, operating in asynchronous mode. It features a max access time of 20ns and offers 131072 words of memory. Ideal for industrial applications requiring fast and reliable data storage with common I/O type and 3-STATE output characteristics.

20 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3 V

SRAMs

115 mA

3.6 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

10.16 mm

IDT71V124SA20PHGI8 by Integrated Device Technology

IDT71V124SA20PHGI8

Integrated Device Technology

IDT71V124SA20PHGI8 is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 20ns access time, and 1.27mm terminal pitch. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

20 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3 V

SRAMs

115 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

10.16 mm

IDT71V256SA10YG8 by Integrated Device Technology

IDT71V256SA10YG8

Integrated Device Technology

IDT71V256SA10YG8 by Integrated Device Technology is a 32Kx8 CACHE SRAM with 10ns access time, operating at 3.3V. It features a small outline package, 3-STATE output characteristics, and J BEND terminal form. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

10 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

CACHE SRAM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.556 mm

.002 Amp

3 V

SRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

CY7C1463AV33-133AXC by Cypress Semiconductor

CY7C1463AV33-133AXC

Cypress Semiconductor

CY7C1463AV33-133AXC by Cypress Semiconductor is a 2MX18 ZBT SRAM with 133 MHz clock frequency, 6.5 ns access time, and 3.3V nominal voltage. It is used in applications requiring fast synchronous memory operations such as networking equipment and high-performance computing systems.

6.5 ns

FLOW-THROUGH ARCHITECTURE

133 MHz

COMMON

R-PQFP-G100

e3

20 mm

37748736 bit

ZBT SRAM

18

3

1

100

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.12 Amp

3.14 V

SRAMs

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

IS61LV51216-10TLI by Integrated Silicon Solution

IS61LV51216-10TLI

Integrated Silicon Solution

IS61LV51216-10TLI by Integrated Silicon Solution is a 512KX16 SRAM with 10 ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and 44 terminals for parallel interfacing. Ideal for high-speed memory applications in industrial environments.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

16

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.025 Amp

3.14 V

SRAMs

110 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

71342LA20J by Integrated Device Technology

71342LA20J

Integrated Device Technology

71342LA20J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a square chip carrier package style and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA20PF by Integrated Device Technology

71342LA20PF

Integrated Device Technology

71342LA20PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 20ns in commercial temperature grade applications. Its low profile flatpack package with gull wing terminals makes it suitable for space-constrained designs requiring fast parallel data processing.

20 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25JI by Integrated Device Technology

71342LA25JI

Integrated Device Technology

71342LA25JI by Integrated Device Technology is a 4Kx8 multi-port SRAM chip with 3-STATE output, operating at 5V. It features an access time of 25ns and operates in industrial temperature range (-40 to 85°C). Suitable for applications requiring fast and reliable memory storage in various electronic devices.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25J by Integrated Device Technology

71342LA25J

Integrated Device Technology

71342LA25J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 8-bit memory width. Operating at 5V, it offers a max access time of 25ns and features an asynchronous mode suitable for commercial applications. With a package style of CHIP CARRIER, this SRAM has a terminal pitch of 1.27mm and is designed for surface mount usage.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25PFI by Integrated Device Technology

71342LA25PFI

Integrated Device Technology

71342LA25PFI by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 32768 bit memory density. It operates at an industrial temperature grade of -40 to 85 °C and has a max access time of 25 ns. Ideal for applications requiring fast and reliable data storage in industrial environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25PF by Integrated Device Technology

71342LA25PF

Integrated Device Technology

71342LA25PF by Integrated Device Technology is a 4Kx8 SRAM with a memory density of 32768 bit. It operates at an asynchronous mode with a max access time of 25 ns. This multi-port SRAM is ideal for applications requiring fast and reliable data storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA35J by Integrated Device Technology

71342LA35J

Integrated Device Technology

71342LA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA35PF by Integrated Device Technology

71342LA35PF

Integrated Device Technology

71342LA35PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 35ns and features a low profile FLATPACK package. Ideal for applications requiring fast data access in commercial temperature environments.

35 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA45J by Integrated Device Technology

71342LA45J

Integrated Device Technology

71342LA45J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 45 ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55J by Integrated Device Technology

71342LA55J

Integrated Device Technology

71342LA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can operate in asynchronous mode. Ideal for applications requiring fast memory access and common I/O type in commercial temperature environments.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55PF by Integrated Device Technology

71342LA55PF

Integrated Device Technology

71342LA55PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with a max access time of 55 ns. It operates at a nominal voltage of 5V and has a package style of FLATPACK, LOW PROFILE. This SRAM is commonly used in applications that require fast and reliable memory storage.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA70J by Integrated Device Technology

71342LA70J

Integrated Device Technology

71342LA70J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 70ns and features a temperature grade of COMMERCIAL. Ideal for applications requiring fast and reliable data storage in commercial-grade electronic devices.

70 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20J by Integrated Device Technology

71342SA20J

Integrated Device Technology

71342SA20J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 20ns access time, operating at 5V. It features a square plastic/epoxy package and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20PF by Integrated Device Technology

71342SA20PF

Integrated Device Technology

71342SA20PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 8-bit memory width. Operating at 5V, it offers a max access time of 20ns and features an asynchronous mode suitable for commercial applications. The package style is flatpack, low profile with a square shape and gull wing terminal form.

20 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA25J by Integrated Device Technology

71342SA25J

Integrated Device Technology

71342SA25J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time and operates at 5V. It features a square chip carrier package, CMOS technology, and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA25PF by Integrated Device Technology

71342SA25PF

Integrated Device Technology

71342SA25PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA35J by Integrated Device Technology

71342SA35J

Integrated Device Technology

71342SA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 35ns access time and operates at 5V. It features a square chip carrier package, suitable for applications requiring fast and reliable memory storage in commercial-grade devices. With common I/O type and 3-STATE output characteristics, it offers parallel data transfer capabilities for various electronic systems.

35 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA35PF by Integrated Device Technology

71342SA35PF

Integrated Device Technology

71342SA35PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 35ns and features a low profile flatpack package style. Ideal for applications requiring fast data access in commercial temperature environments.

35 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA45J by Integrated Device Technology

71342SA45J

Integrated Device Technology

71342SA45J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 45ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55J by Integrated Device Technology

71342SA55J

Integrated Device Technology

71342SA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55PF by Integrated Device Technology

71342SA55PF

Integrated Device Technology

71342SA55PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA70J by Integrated Device Technology

71342SA70J

Integrated Device Technology

71342SA70J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 4096 words, operating at 5V. It features a max access time of 70ns and offers a memory density of 32768 bits. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

70 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

IS62WV10248DBLL-55TLI by Integrated Silicon Solution

IS62WV10248DBLL-55TLI

Integrated Silicon Solution

IS62WV10248DBLL-55TLI by Integrated Silicon Solution is a 1MX8 SRAM with 3-STATE output, operating at 55 ns. It features a supply voltage of 1.8V, suitable for commercial applications requiring fast and reliable memory access in a small outline package. With a memory density of 8388608 bit and parallel interface, it offers high-speed data storage solutions.

55 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.00004 Amp

1.4 V

SRAMs

22 mA

2.2 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

DS2045W-100 by Maxim Integrated

DS2045W-100

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 256; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

100 ns

S-PBGA-B256

27 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

256

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

PARALLEL

NOT SPECIFIED

Not Qualified

8.72 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1.27 mm

BOTTOM

NOT SPECIFIED

27 mm

CY62167DV30LL-45ZXI by Cypress Semiconductor

CY62167DV30LL-45ZXI

Cypress Semiconductor

CY62167DV30LL-45ZXI by Cypress Semiconductor is a 1MX16 SRAM with 3.6V max supply voltage, 45ns access time, and 16-bit memory width. Ideal for industrial applications requiring fast and reliable data storage in a compact thin profile package.

45 ns

CONFIGURABLE AS 2M X 8 ALSO

COMMON

R-PDSO-G48

e4

18.4 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.00001 Amp

1.5 V

SRAMs

37 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

DUAL

20

12 mm

CY7C025-25AXC by Cypress Semiconductor

CY7C025-25AXC

Cypress Semiconductor

CY7C025-25AXC by Cypress Semiconductor is an 8Kx16 SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and is ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

25 ns

COMMON

S-PQFP-G100

e3

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

250 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

CY7C025-25AXI by Cypress Semiconductor

CY7C025-25AXI

Cypress Semiconductor

CY7C025-25AXI by Cypress Semiconductor is an 8Kx16 SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and is ideal for industrial applications requiring fast and reliable memory storage.

25 ns

COMMON

S-PQFP-G100

e3

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

290 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

CY7C1021CV33-10ZXI by Cypress Semiconductor

CY7C1021CV33-10ZXI

Cypress Semiconductor

CY7C1021CV33-10ZXI by Cypress Semiconductor is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 44 terminals. It operates in industrial temperatures and has a memory density of 1048576 bits. Ideal for applications requiring fast, common I/O type asynchronous memory with small outline package style.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.005 Amp

3 V

SRAMs

90 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1329H-166AXC by Cypress Semiconductor

CY7C1329H-166AXC

Cypress Semiconductor

CY7C1329H-166AXC by Cypress Semiconductor is a 64KX32 CACHE SRAM with 3.3V supply, operating at 166 MHz clock frequency. It features a low profile FLATPACK package and offers fast access time of 3.5 ns. Ideal for applications requiring high-speed synchronous memory in commercial-grade temperature environments.

3.5 ns

PIPELINED ARCHITECTURE

166 MHz

COMMON

R-PQFP-G100

e3

20 mm

2097152 bit

CACHE SRAM

32

3

1

100

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX32

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.04 Amp

3.14 V

SRAMs

240 mA

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C0830AV-133AI by Cypress Semiconductor

CY7C0830AV-133AI

Cypress Semiconductor

CY7C0830AV-133AI by Cypress Semiconductor is a 64KX18 SRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, 120 terminals in a flatpack package, and supports parallel interface. Ideal for industrial applications requiring fast access time and low power consumption.

4 ns

PIPELINED ARCHITECTURE

COMMON

S-PQFP-G120

e0

14 mm

1179648 bit

MULTI-PORT SRAM

18

3

1

2

120

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP120,.63SQ,16

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1.6 mm

.075 Amp

3.14 V

SRAMs

300 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.4 mm

QUAD

14 mm

CY7C1041CV33-20ZSXE by Cypress Semiconductor

CY7C1041CV33-20ZSXE

Cypress Semiconductor

CY7C1041CV33-20ZSXE by Cypress is a 256Kx16 SRAM with 3.3V supply, operating at -40 to 125°C. It features asynchronous mode, 20ns access time, and AEC-Q100 screening for automotive applications. The memory IC has a compact thin profile package with 0.8mm terminal pitch suitable for space-constrained designs.

20 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

.015 Amp

3 V

SRAMs

75 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C106D-10VXI by Cypress Semiconductor

CY7C106D-10VXI

Cypress Semiconductor

CY7C106D-10VXI by Cypress Semiconductor is a 256KX4 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for parallel memory applications. With 262144 words and 1048576-bit density, it offers common I/O type and 3-STATE output characteristics.

10 ns

COMMON

R-PDSO-J28

e4

18.415 mm

1048576 bit

STANDARD SRAM

4

3

1

28

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX4

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.003 Amp

2 V

SRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

30

10.16 mm

CY7C131-55JXC by Cypress Semiconductor

CY7C131-55JXC

Cypress Semiconductor

CY7C131-55JXC by Cypress Semiconductor is a 1Kx8 SRAM chip with 55ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-STATE output characteristics. Ideal for commercial applications requiring fast memory access in a compact square chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C131-55JXI by Cypress Semiconductor

CY7C131-55JXI

Cypress Semiconductor

CY7C131-55JXI by Cypress Semiconductor is a 1Kx8 SRAM with 55ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

AS6C4008-55SINTR by Alliance Memory

AS6C4008-55SINTR

Alliance Memory

Alliance Memory's AS6C4008-55SINTR is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features common I/O type and 3-state output characteristics in a small outline package. With parallel interface and low standby current, it suits various embedded systems.

55 ns

COMMON

R-PDSO-G32

e3/e6

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

3/5

Not Qualified

2.997 mm

.00003 Amp

1.5 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

11.303 mm

CY62157DV30LL-55BVXI by Cypress Semiconductor

CY62157DV30LL-55BVXI

Cypress Semiconductor

CY62157DV30LL-55BVXI by Cypress is a 512Kx16 SRAM with 55ns access time, operating at 3V. It features a very thin profile package and common I/O type, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8 mm

8388608 bit

STANDARD SRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.5/3.3

Not Qualified

1 mm

.000004 Amp

1.5 V

SRAMs

15 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

20

6 mm

CY62157DV30LL-55ZSXI by Cypress Semiconductor

CY62157DV30LL-55ZSXI

Cypress Semiconductor

CY62157DV30LL-55ZSXI by Cypress Semiconductor is a 512Kx16 SRAM with 3.3V nominal voltage, 55ns access time, and 8388608-bit memory density. It is used in industrial applications requiring fast and reliable data storage with a parallel interface.

55 ns

COMMON

R-PDSO-G44

e4

18.415 mm

8388608 bit

STANDARD SRAM

16

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3

Not Qualified

1.194 mm

.000004 Amp

1.5 V

SRAMs

15 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IS61LV25616AL-10TLI by Integrated Silicon Solution

IS61LV25616AL-10TLI

Integrated Silicon Solution

IS61LV25616AL-10TLI by Integrated Silicon Solution is a 256KX16 SRAM with 3.3V supply, operating at -40 to 85 °C. It features 10ns access time, 110mA max supply current, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in compact form factor.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.015 Amp

2 V

SRAMs

110 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS61LV5128AL-10KLI by Integrated Silicon Solution

IS61LV5128AL-10KLI

Integrated Silicon Solution

IS61LV5128AL-10KLI by Integrated Silicon Solution is a 512KX8 SRAM with 3.3V supply, 10ns access time, and 95mA max supply current. It's used in industrial applications requiring fast, common I/O asynchronous memory with 36 terminals and small outline package style.

10 ns

COMMON

R-PDSO-J36

e3

23.495 mm

4194304 bit

STANDARD SRAM

8

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.75 mm

.02 Amp

3.14 V

SRAMs

95 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm