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71342LA35J

Integrated Device Technology

71342LA35J by Integrated Device Technology

71342LA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 2,786 parts In-Stock

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VNN

France . 2,714 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 435 parts In-Stock

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$7.712

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Ampacity Inc.

Singapore . 1,602 parts In-Stock

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$18.000

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Microchip USA

USA . 358 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Elevate your electronic projects with the 71342LA35J by Integrated Device Technology. Known for their top-notch quality and reliability, IDT's SRAM memory module offers seamless integration and high performance for a wide range of applications. With a focus on innovation and customer satisfaction, this product provides exceptional value and benefits, ensuring smooth operation and efficiency for your technology needs. Upgrade to the 71342LA35J today and experience the difference IDT can make in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and reliability to the product, ensuring a longer lifespan.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data transfer and processing speeds compared to synchronous operation, making this product suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with a wide range of systems and devices.

No. of Terminals: 52

With 52 terminals, this product offers multiple connection options and versatility in interfacing with other components.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can perform reliably in a variety of environmental conditions.

Organization: 4KX8

The 4KX8 organization allows for efficient data storage and access, making this product suitable for memory-intensive tasks.

Output Characteristics: 3-STATE

3-STATE output characteristics provide flexibility in controlling the output signal, enhancing the versatility of this product in different applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable in noisy environments.

Technical Specifications

SRAM 71342LA35J attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

35 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e0

Length:

19.1262 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

52

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.0015 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

19.1262 mm

Trade Compliance

71342LA35J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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