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71342SA35J

Integrated Device Technology

71342SA35J by Integrated Device Technology

71342SA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 35ns access time and operates at 5V. It features a square chip carrier package, suitable for applications requiring fast and reliable memory storage in commercial-grade devices. With common I/O type and 3-STATE output characteristics, it offers parallel data transfer capabilities for various electronic systems.

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1k+

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Vyrian

USA . 13,249 parts In-Stock

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VNN

France . 1,453 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 660 parts In-Stock

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$6.000

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AZTECH Wire

Italy . 217 parts In-Stock

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Microchip USA

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Bastille Electronics

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Perfect Parts

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Overview

Upgrade your system with the 71342SA35J from Integrated Device Technology, a leading manufacturer of high-quality SRAM modules. This versatile chip carrier offers 4Kx8 organization and 3-STATE output characteristics, perfect for a wide range of applications. With a 35ns maximum access time and common input/output type, this multi-port SRAM delivers exceptional performance while ensuring reliability and efficiency. Trust IDT to provide top-notch technology that meets your needs and exceeds your expectations. Elevate your project with the 71342SA35J today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and protection against damage.

Surface Mount: YES

Easy to integrate into circuit boards, saving space and simplifying assembly process.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of memory cells, increasing efficiency and speed.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies, ensuring easy integration into existing systems.

Memory IC Type: MULTI-PORT SRAM

Allows for multiple read/write accesses simultaneously, enhancing performance in multi-tasking applications.

Technical Specifications

SRAM 71342SA35J attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

35 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e0

Length:

19.1262 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

52

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.015 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

260 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

19.1262 mm

Trade Compliance

71342SA35J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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