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70V659S12DRGI8

Renesas Electronics

70V659S12DRGI8 by Renesas Electronics

Renesas Electronics 70V659S12DRGI8 is a 128Kx36 MULTI-PORT SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features 12 ns max access time, 515 mA max supply current, and offers parallel interface. Ideal for applications requiring high-speed data processing and storage in industrial environments.

Median Price

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3

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1k+

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Vyrian

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AZTECH Wire

Italy . 331 parts In-Stock

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Ampacity Inc.

Singapore . 1,459 parts In-Stock

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Component Stockers USA

USA . 647 parts In-Stock

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$99.990

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Microchip USA

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Argo Parts USA

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Continental Prestige Electronics

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Bastille Electronics

Australia . 36 parts In-Stock

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Overview

Unlock the power of reliable data storage with the 70V659S12DRGI8 by Renesas Electronics. Renowned for their high-quality products, Renesas Electronics delivers cutting-edge SRAM technology that is perfect for a wide range of applications. With a focus on value and performance, this multi-port SRAM offers customers a seamless experience with its fast access time, common input/output type, and industrial-grade temperature tolerance. Say goodbye to downtime and hello to efficiency with the 70V659S12DRGI8 - the perfect choice for those seeking top-tier memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability of the package, making it suitable for various applications.

Nominal Supply Voltage / Vsup (V): 3.3

Stable supply voltage of 3.3V ensures consistent performance and operation of the SRAM.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this SRAM can operate efficiently even in elevated temperature environments.

Memory IC Type: MULTI-PORT SRAM

The multi-port SRAM design allows for simultaneous access to multiple memory locations, increasing the efficiency and speed of data processing.

Technical Specifications

SRAM 70V659S12DRGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQFP-G208

JESD-609 Code:

e3

Length:

28 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

208

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP208,1.2SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3,3.3

Qualification:

Not Qualified

Maximum Seated Height:

4.1 mm

Maximum Standby Current:

.015 Amp

Minimum Standby Voltage:

3.15 V

Sub-Category:

SRAMs

Maximum Supply Current:

515 mA

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

28 mm

Trade Compliance

70V659S12DRGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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