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70V658S10BF

Renesas Electronics

70V658S10BF by Renesas Electronics

The Renesas Electronics 70V658S10BF is a 64Kx36 MULTI-PORT SRAM with 3.3V nominal voltage, operating in asynchronous mode. It features a memory width of 36 bits and max access time of 10 ns. Ideal for applications requiring fast and efficient data storage and retrieval in commercial-grade environments.

Median Price

$196.605

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Master Electronics

USA . 1 parts In-Stock

1+ parts

$184.210

100+ parts

$157.480

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$157.480

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$157.480

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$184.210

$157.480

$157.480

$157.480

Chip1Stop

Japan . 1 parts In-Stock

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$209.000

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Rapid Electronics

USA . 1 parts In-Stock

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$162.887

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VNN

France . 2,055 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Prism Electronics

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Vyrian

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,319 parts In-Stock

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$4.900

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$4.900

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Corohmni

South Africa . 1,108 parts In-Stock

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$5.467

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AZTECH Wire

Italy . 514 parts In-Stock

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$9.656

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Ampacity Inc.

Singapore . 1 parts In-Stock

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$156.580

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Component Stockers USA

USA . 1 parts In-Stock

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$179.790

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Advanced Electronics

New Zealand . 2,544 parts In-Stock

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$214.499

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$197.339

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$184.913

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2,544

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Microchip USA

USA . 1,452 parts In-Stock

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$282.113

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Argo Parts USA

USA . 2,670 parts In-Stock

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Discover the unparalleled quality and reliability of the 70V658S10BF by Renesas Electronics, a leading manufacturer in the industry. This multi-port SRAM offers exceptional performance and versatility for a wide range of applications. With its common input/output type, 64Kx36 organization, and 3-STATE output characteristics, this product ensures seamless operation and efficient data processing. Experience the benefits of this innovative technology, from its thin profile package to its low power consumption and fast access time. Trust Renesas Electronics to deliver cutting-edge solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM chip, ensuring a longer lifespan.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of the SRAM chip without the need for synchronization signals, simplifying system design.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage level for reliable and efficient operation of the SRAM chip.

No. of Terminals: 208

Provides ample connectivity options for interfacing the SRAM chip with other components in the system.

Output Characteristics: 3-STATE

Enables the SRAM chip to have a high-impedance output state, allowing for bus sharing and reducing power consumption.

Technology: CMOS

Utilizes CMOS technology for low power consumption, high speed, and compatibility with a wide range of electronic devices.

Maximum Access Time: 10 ns

Provides fast access times for data retrieval and storage, enhancing overall system performance.

Technical Specifications

SRAM 70V658S10BF attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PBGA-B208

JESD-609 Code:

e0

Length:

15 mm

Memory Density:

2359296 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

208

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA208,17X17,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

2.5/3.3,3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.015 Amp

Minimum Standby Voltage:

3.15 V

Sub-Category:

SRAMs

Maximum Supply Current:

500 mA

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn63Pb37)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

20

Width:

15 mm

Trade Compliance

70V658S10BF Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Renesas Electronics

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