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71342SA25PF

Integrated Device Technology

71342SA25PF by Integrated Device Technology

71342SA25PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

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Lifecycle Status

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1k+

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Nova Conductors

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Ampacity Inc.

Singapore . 1,431 parts In-Stock

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AZTECH Wire

Italy . 401 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Microchip USA

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Overview

Elevate your electronics with the 71342SA25PF by Integrated Device Technology. As a leading manufacturer in the industry, IDT delivers top-tier quality and reliability with their SRAM products. This multi-port SRAM offers lightning-fast access times and a wide operating temperature range, making it perfect for a variety of applications. Whether you're working on high-performance computing or industrial automation, this memory IC provides the speed and efficiency you need. Upgrade to IDT's 71342SA25PF and experience the difference in performance and reliability today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the SRAM, ensuring reliable performance over time.

Surface Mount: YES

Surface mountability allows for easy and efficient integration of the SRAM into electronic assemblies, saving space and facilitating automated manufacturing processes.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode enables independent operation of the SRAM, making it versatile and suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard electronic systems, making the SRAM a convenient choice for many applications.

No. of Terminals: 64

With 64 terminals, this SRAM offers ample connectivity options for interfacing with other components in a system, enhancing flexibility and functionality.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C allows the SRAM to function reliably in various environmental conditions, making it suitable for industrial applications.

Technology: CMOS

The CMOS technology used in this SRAM offers low power consumption and high noise immunity, contributing to energy efficiency and robust performance.

Memory Density: 32768 bit

With a memory density of 32768 bits, this SRAM can store a large amount of data, making it ideal for applications requiring significant memory capacity.

Maximum Access Time: 25 ns

The fast maximum access time of 25 nanoseconds ensures quick retrieval of data from the SRAM, enhancing overall system performance and responsiveness.

Technical Specifications

SRAM 71342SA25PF attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

25 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQFP-G64

JESD-609 Code:

e0

Length:

14 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

64

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP64,.66SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

240

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.015 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

280 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

71342SA25PF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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