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71342SA55J8

Integrated Device Technology

71342SA55J8 by Integrated Device Technology

71342SA55J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade devices.

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AZTECH Wire

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QUARKTWIN TECHNOLOGY LTD

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Overview

Elevate your electronics with the 71342SA55J8 by Integrated Device Technology, a top-tier manufacturer known for quality and reliability. This Multi-Port SRAM offers unmatched performance in a compact chip carrier package, making it ideal for a wide range of applications. Experience lightning-fast access times, low standby current, and versatile input/output options with this innovative solution. Upgrade your design with the best in memory technology and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a long lifespan for the product.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, making installation and integration into systems convenient.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage, compatible with many electronic devices and systems.

No. of Terminals: 52

Provides multiple connection points for interfacing with other components, increasing versatility and functionality.

Maximum Operating Temperature: 70 °C

Ensures reliable performance even in high-temperature environments, making it suitable for a wide range of applications.

Memory IC Type: MULTI-PORT SRAM

This feature allows for simultaneous access to multiple memory ports, enabling faster data retrieval and processing.

Technical Specifications

SRAM 71342SA55J8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

55 ns

Additional Features:

SEMAPHORE; AUTOMATIC POWER-DOWN

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e0

Length:

19.1262 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

52

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.015 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

240 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

19.1262 mm

Trade Compliance

71342SA55J8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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