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71321SA55JI8

Integrated Device Technology

71321SA55JI8 by Integrated Device Technology

71321SA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can withstand industrial temperatures. Ideal for applications requiring fast data retrieval in harsh environments.

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AZTECH Wire

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Unlock the power of reliable data storage with the 71321SA55JI8 from Integrated Device Technology. As a leading manufacturer in the industry, IDT guarantees top-notch quality and performance. This SRAM chip is perfect for a wide range of applications, offering seamless operation in an asynchronous mode with common input/output type. With a 2Kx8 organization and 3-STATE output characteristics, this chip provides fast access times and efficient memory storage. Trust IDT to deliver exceptional value and benefits with the 71321SA55JI8, setting a new standard for memory IC technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SRAM, ensuring long-term functionality.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of each memory location, providing flexibility and efficiency in data access.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard voltage requirements, making it easy to integrate into existing systems.

Organization: 2KX8

Organized in 2 kilobits by 8 bits configuration, allowing for efficient data storage and retrieval.

Technology: CMOS

Utilizes CMOS technology, which offers low power consumption and high speed operation, ideal for various applications.

Memory IC Type: MULTI-PORT SRAM

Designed as a multi-port SRAM, offering simultaneous access to multiple memory locations, increasing overall system performance.

Maximum Access Time: 55 ns

Provides fast access to stored data, improving the overall speed and responsiveness of the system.

Technical Specifications

SRAM 71321SA55JI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

55 ns

Additional Features:

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e0

Length:

19.1262 mm

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

52

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.572 mm

Maximum Standby Current:

.03 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

190 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

19.1262 mm

Trade Compliance

71321SA55JI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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