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71342LA35PF8

Integrated Device Technology

71342LA35PF8 by Integrated Device Technology

Integrated Device Technology's 71342LA35PF8 is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,050 parts In-Stock

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VNN

France . 2,012 parts In-Stock

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2,012

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Ampacity Inc.

Singapore . 1,004 parts In-Stock

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$11.000

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1,004

$11.000

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AZTECH Wire

Italy . 679 parts In-Stock

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$17.817

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679

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Bastille Electronics

Australia . 300 parts In-Stock

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Microchip USA

USA . 162 parts In-Stock

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Overview

Elevate your electronics with the 71342LA35PF8 by Integrated Device Technology, a high-quality SRAM memory chip that offers unmatched performance and reliability. Crafted by a trusted manufacturer, this multi-port SRAM is perfect for a wide range of applications, delivering lightning-fast access times and low standby current consumption. With a compact design and versatile features, this memory chip is a must-have for any tech enthusiast looking to take their projects to the next level. Upgrade your devices today with the 71342LA35PF8 and experience the difference in speed and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the SRAM, ensuring reliable performance in various operating conditions.

Surface Mount: YES

Surface mount capability makes it easy to integrate this SRAM into electronic circuit boards, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient data transfer within the SRAM, enhancing its performance and versatility.

Nominal Supply Voltage: 5V

Operating at a standard 5V supply voltage ensures compatibility with common electronic systems, making this SRAM a practical choice for a wide range of applications.

Memory IC Type: MULTI-PORT SRAM

The multi-port SRAM design allows for simultaneous access to multiple memory locations, increasing data processing speed and efficiency.

Technical Specifications

SRAM 71342LA35PF8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

35 ns

Additional Features:

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

Input/Output Type:

COMMON

JESD-30 Code:

S-PQFP-G64

JESD-609 Code:

e0

Length:

14 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

64

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP64,.66SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

240

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.0015 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

71342LA35PF8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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