Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IS62C5128BL-45QLI-TR
Integrated Silicon Solution
IS62C5128BL-45QLI-TR by Integrated Silicon Solution is a 512Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 45ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in industrial environments.
45 ns
COMMON
R-PDSO-G32
e3
4194304 bit
STANDARD SRAM
8
3
32
524288 words
512K
ASYNCHRONOUS
85 Cel
-40 Cel
512KX8
3-STATE
PLASTIC/EPOXY
SOP
SOP32,.56
RECTANGULAR
SMALL OUTLINE
PARALLEL
260
5
Not Qualified
.000015 Amp
2 V
SRAMs
20 mA
YES
CMOS
INDUSTRIAL
MATTE TIN
GULL WING
1.27 mm
DUAL
30
IS61WV20488BLL-10TLI-TR
IS61WV20488BLL-10TLI-TR by Integrated Silicon Solution is a 2MX8 SRAM with 3-STATE output, operating at -40 to 85 °C. It has a memory density of 16Mbit and operates in parallel mode with access time of 10ns. Ideal for industrial applications requiring fast and reliable memory storage.
10 ns
R-PDSO-G44
16777216 bit
44
2097152 words
2M
2MX8
TSOP
TSOP44,.46,32
SMALL OUTLINE, THIN PROFILE
2.5/3.3
.025 Amp
1.2 V
100 mA
.8 mm
IS61LV25616AL-10BI-TR
IS61LV25616AL-10BI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with a 3.3V supply voltage and an operating temperature range of -40 to 85°C. It features a parallel interface and has a max access time of 10ns. This memory IC is commonly used in industrial applications requiring high-speed data storage.
R-PBGA-B48
16
48
262144 words
256K
256KX16
FBGA
BGA48,6X8,30
GRID ARRAY, FINE PITCH
3.3
.015 Amp
BALL
.75 mm
BOTTOM
IS61LV25616AL-10BLI-TR
IS61LV25616AL-10BLI-TR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. It features a grid array package style and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact form factors.
IS61WV102416BLL-10MLI-TR
IS61WV102416BLL-10MLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 16-bit memory width and 16777216 bit density. Operating at 3.3V, it offers a max access time of 10ns and peak reflow temperature of 260°C. Ideal for industrial applications requiring fast and reliable parallel memory storage solutions.
e1
11 mm
1
1048576 words
1M
1MX16
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
1.2 mm
2.4 V
95 mA
3.6 V
TIN SILVER COPPER
10
9 mm
IS61WV25616BLS-25TLI-TR
IS61WV25616BLS-25TLI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with 3-STATE output. Operating at -40 to 85 °C, it has a standby voltage of 2V and max access time of 25ns. Ideal for industrial applications requiring fast and reliable parallel memory solutions.
25 ns
.009 Amp
25 mA
IS61DDB251236A-250M3L
IS61DDB251236A-250M3L by Integrated Silicon Solution is a 512Kx36 DDR SRAM with synchronous operation and 250 MHz clock frequency. It features a low profile grid array package, operates at 1.8V, and has a memory density of 18874368 bits. Ideal for applications requiring high-speed data processing in commercial temperature environments.
.45 ns
PIPELINED ARCHITECTURE
250 MHz
R-PBGA-B165
17 mm
18874368 bit
DDR SRAM
36
165
SYNCHRONOUS
70 Cel
0 Cel
512KX36
LBGA
BGA165,11X15,40
GRID ARRAY, LOW PROFILE
1.5/1.8,1.8
1.4 mm
.27 Amp
1.7 V
550 mA
1.89 V
1.71 V
1.8
COMMERCIAL
1 mm
15 mm
IS61QDB251236A-250M3L
IS61QDB251236A-250M3L by Integrated Silicon Solution is a 512Kx36 QDR SRAM with synchronous operation at 250 MHz. It features separate I/O, 3-STATE output, and low profile grid array package. Ideal for high-speed applications requiring fast access time and high memory density.
SEPARATE
QDR SRAM
1000 mA
IS61WV25616EDBLL-10BLI-TR
IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 3V. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access time of 10ns and low standby current consumption of 0.006A.
8 mm
APPLICATION SPECIFIC SRAM
.006 Amp
35 mA
6 mm
IS61WV25616EDBLL-10TLI-TR
STANDARD SRAM; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
IS61WV25616EDBLL-8BLI-TR
IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with 8 ns access time, operating at 3.6V max voltage. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast, common I/O type memory with low standby current of 0.006 Amp.
8 ns
45 mA
IS61WV25616EDBLL-8BLI
IS61WV25616EDBLL-8BLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous operation, common I/O type, and 8ns max access time. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
3.63 V
2.97 V
IS61WV25616EDBLL-8TLI-TR
IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. Ideal for industrial applications, it offers fast access time of 8ns and low standby current of 0.006Amp. With a compact design and common I/O type, this CMOS technology-based memory IC is suitable for various parallel data processing tasks.
18.41 mm
TSOP2
10.16 mm
IS61WV25616EDBLL-8TLI
IS61WV25616EDBLL-8TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous mode, common I/O type, and 8ns access time. Ideal for applications requiring fast and reliable memory storage in compact form factor.
IS61WV6416EEBLL-10TLI
IS61WV6416EEBLL-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 10ns access time, operating at 3.3V. It features a small outline package, suitable for industrial temperature grades. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
1048576 bit
65536 words
64K
64KX16
.004 Amp
IS61LPS25618EC-200TQLI
IS61LPS25618EC-200TQLI by Integrated Silicon Solution is a 256KX18 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a low profile FLATPACK package and operates in industrial temperature range. Ideal for applications requiring fast access time and high memory density.
3.1 ns
200 MHz
R-PQFP-G100
20 mm
4718592 bit
CACHE SRAM
18
100
256KX18
LQFP
QFP100,.63X.87
FLATPACK, LOW PROFILE
2.5/3.3,3.3
1.6 mm
.085 Amp
3.14 V
220 mA
3.465 V
3.135 V
.65 mm
QUAD
14 mm
IS61VPS204836B-250B3LI
IS61VPS204836B-250B3LI by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 250 MHz clock frequency, 2.5V supply voltage, and 2.6 ns access time. It is ideal for industrial applications requiring fast and synchronous memory operations in a compact GRID ARRAY package with thin profile design.
2.6 ns
75497472 bit
2MX36
TBGA
GRID ARRAY, THIN PROFILE
2.5
2.38 V
2.625 V
2.375 V
13 mm
IS61NLP102418B-200TQLI
IS61NLP102418B-200TQLI by Integrated Silicon Solution is a 1MX18 SRAM with 1048576 words, 18874368 bit memory density, and 3 ns max access time. Ideal for industrial applications requiring fast synchronous operation in a compact FLATPACK package with low profile design.
3 ns
1MX18
NOT SPECIFIED
IS66WVE4M16EALL-70BLI
IS66WVE4M16EALL-70BLI by Integrated Silicon Solution is a 4MX16 Pseudo Static RAM with a memory density of 67108864 bit. It operates in asynchronous mode with a max access time of 70 ns and has a min standby voltage of 1.7 V. This SRAM is commonly used in industrial applications that require high-speed data storage and retrieval.
70 ns
67108864 bit
PSEUDO STATIC RAM
4194304 words
4M
4MX16
NO
.00015 Amp
1.95 V
IS61C25616AL-10KLI
IS61C25616AL-10KLI by Integrated Silicon Solution is a 256KX16 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.
R-PDSO-J44
28.575 mm
SOJ
3.75 mm
5.5 V
4.5 V
J BEND
IS61WV51216BLL-10MLI
IS61WV51216BLL-10MLI by Integrated Silicon Solution is a 512Kx16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and offers common I/O type for industrial applications requiring fast and reliable memory storage.
8388608 bit
512KX16
.02 Amp
IS61WV25616BLS-25TLI
IS61WV25616BLS-25TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features 25ns max access time, 4194304-bit memory density, and supports asynchronous operation. Ideal for applications requiring fast and reliable data storage in harsh environments.
18.415 mm
IS61WV51232BLL-10BLI
IS61WV51232BLL-10BLI by Integrated Silicon Solution is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a low profile grid array package and is ideal for industrial applications requiring fast and reliable parallel memory storage. With a memory density of 16Mbit, it offers high-speed data retrieval in harsh environments.
R-PBGA-B90
90
512KX32
LFBGA
GRID ARRAY, LOW PROFILE, FINE PITCH
1.45 mm
IS62WV1288BLL-55HLI-TR
IS62WV1288BLL-55HLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time. Operating at 3V, it's ideal for industrial applications requiring fast and reliable memory storage. With a compact size of 11.8mm x 8mm and low power consumption, it's suitable for various embedded systems.
55 ns
11.8 mm
131072 words
128K
128KX8
TSOP1
1.25 mm
2.5 V
.5 mm
IS62WV1288BLL-55QLI-TR
IS62WV1288BLL-55QLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.6V max supply voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and 1048576-bit memory density, it offers fast data retrieval for various electronic devices.
20.445 mm
3 mm
11.305 mm
IS62WV1288BLL-55TLI-TR
IS62WV1288BLL-55TLI-TR by Integrated Silicon Solution is a 128KX8 SRAM with 55 ns access time, operating at 3.6 V max voltage. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With 131072 words and memory density of 1048576 bits, this CMOS technology-based SRAM offers reliable parallel data storage solutions.
18.4 mm
IS63LV1024L-12BLI
IS63LV1024L-12BLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a thin profile grid array package and offers a fast access time of 12ns. Ideal for industrial applications requiring high-speed memory in compact form factors.
12 ns
R-PBGA-B36
10 mm
BGA36,6X8,30
.0015 Amp
3.45 V
3.15 V
IS63LV1024L-12JL
IS63LV1024L-12JL by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 3.3V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for commercial applications requiring fast memory access in a small outline package.
R-PDSO-J32
20.955 mm
SOJ32,.34
3.56 mm
90 mA
3 V
7.62 mm
IS61C1024AL-12KLI
IS61C1024AL-12KLI by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.
20.95 mm
SOJ32,.44
3.76 mm
.00045 Amp
50 mA
Matte Tin (Sn) - annealed
IS61LV51216-10TLI
IS61LV51216-10TLI by Integrated Silicon Solution is a 512KX16 SRAM with 10 ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and 44 terminals for parallel interfacing. Ideal for high-speed memory applications in industrial environments.
110 mA
IS62WV10248DBLL-55TLI
IS62WV10248DBLL-55TLI by Integrated Silicon Solution is a 1MX8 SRAM with 3-STATE output, operating at 55 ns. It features a supply voltage of 1.8V, suitable for commercial applications requiring fast and reliable memory access in a small outline package. With a memory density of 8388608 bit and parallel interface, it offers high-speed data storage solutions.
1MX8
.00004 Amp
1.4 V
22 mA
2.2 V
1.65 V
IS61LV25616AL-10TLI
IS61LV25616AL-10TLI by Integrated Silicon Solution is a 256KX16 SRAM with 3.3V supply, operating at -40 to 85 °C. It features 10ns access time, 110mA max supply current, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in compact form factor.
IS61LV5128AL-10KLI
IS61LV5128AL-10KLI by Integrated Silicon Solution is a 512KX8 SRAM with 3.3V supply, 10ns access time, and 95mA max supply current. It's used in industrial applications requiring fast, common I/O asynchronous memory with 36 terminals and small outline package style.
R-PDSO-J36
23.495 mm
SOJ36,.44
IS63LV1024L-10HL
IS63LV1024L-10HL by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at 0-70°C. It features asynchronous operation, 10ns access time, and 32 terminals in a small outline package. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.
LSSOP
TSSOP32,.56,20
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
IS61C6416AL-12KI
IS61C6416AL-12KI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.
e0
SOJ44,.44
.0001 Amp
55 mA
TIN LEAD
IS61C6416AL-12KLI
IS61C6416AL-12KLI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous mode. Ideal for applications requiring fast and reliable memory storage in harsh environments.
IS61C6416AL-12TI
IS61C6416AL-12TI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.
IS64C6416AL-15TLA3
IS64C6416AL-15TLA3 by Integrated Silicon Solution is a 64Kx16 SRAM with 5V supply, 15ns access time, and AEC-Q100 screening. Ideal for automotive applications due to its small outline package and wide operating temperature range from -40°C to 125°C. With common I/O type and 3-state output characteristics, it offers reliable performance in demanding environments.
15 ns
125 Cel
AEC-Q100
.000125 Amp
60 mA
AUTOMOTIVE
IS62WV12816BLL-55BLI
IS62WV12816BLL-55BLI by Integrated Silicon Solution is a 128KX16 SRAM with 55 ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.
2097152 bit
128KX16
3/3.3
.00001 Amp
1 V
30 mA
IS62WV1288BLL-55QLI
IS62WV1288BLL-55QLI by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.3V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.
.000005 Amp
15 mA
IS62WV1288BLL-55TLI
IS62WV1288BLL-55TLI by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and Gull Wing terminals. Ideal for applications requiring fast and reliable memory storage in harsh environments.
TSSOP32,.8,20
40
IS63LV1024L-10JLI
IS63LV1024L-10JLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous operation, 10ns access time, and 3-STATE output. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.
105 mA
IS61LPS25636A-200TQLI
IS61LPS25636A-200TQLI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3.3V nominal voltage, operating at up to 200MHz clock frequency. Ideal for industrial applications requiring fast access time of 3.1ns and low standby current of 0.105Amp.
9437184 bit
256KX36
.105 Amp
275 mA
IS61LV6416-10BLI
IS61LV6416-10BLI by Integrated Silicon Solution is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact GRID ARRAY package.
BGA48,6X8,32
.01 Amp
130 mA
IS62LV256AL-45ULI
IS62LV256AL-45ULI by Integrated Silicon Solution is a 32KX8 SRAM with 3.3V supply, 45ns access time, and 32768 words. Ideal for industrial applications requiring fast and reliable memory storage in a small outline package.
R-PDSO-G28
18.11 mm
262144 bit
28
32768 words
32K
32KX8
SOP28,.45
2.84 mm
.00002 Amp
12 mA
8.405 mm
IS61LV6416-10TLI
IS61LV6416-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features a 10ns access time, 44 terminals in a small outline package, and is ideal for industrial applications requiring fast and reliable memory storage.
IS63LV1024L-10TLI
IS63LV1024L-10TLI by Integrated Silicon Solution is a 128Kx8 SRAM with 10ns access time, operating at 3.3V. It features a small outline package suitable for industrial applications, offering 131072 words of memory with 1048576 bits density in an asynchronous mode.
TSOP32,.46
IS62WV10248BLL-55BLI
IS62WV10248BLL-55BLI by Integrated Silicon Solution is a 1MX8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.
8.7 mm
7.2 mm
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