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IS61QDB251236A-250M3L

Integrated Silicon Solution

IS61QDB251236A-250M3L by Integrated Silicon Solution

IS61QDB251236A-250M3L by Integrated Silicon Solution is a 512Kx36 QDR SRAM with synchronous operation at 250 MHz. It features separate I/O, 3-STATE output, and low profile grid array package. Ideal for high-speed applications requiring fast access time and high memory density.

Median Price

$29.260

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 79 parts In-Stock

1+ parts

$29.260

100+ parts

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79

$29.260

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Vyrian

USA . 8,942 parts In-Stock

1+ parts

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8,942

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 870 parts In-Stock

1+ parts

$18.169

100+ parts

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870

$18.169

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Continental Prestige Electronics

USA . 3,843 parts In-Stock

1+ parts

$29.260

100+ parts

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1k+ parts

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10k+ parts

$28.675

3,843

$29.260

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$28.675

Component Stockers USA

USA . 190 parts In-Stock

1+ parts

$530.450

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190

$530.450

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Argo Parts USA

USA . 2,081 parts In-Stock

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2,081

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$28.675

1k+ parts

$27.797

10k+ parts

$27.212

1,000

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$28.675

$27.797

$27.212

Overview

Unlock the power of advanced technology with the IS61QDB251236A-250M3L by Integrated Silicon Solution. This cutting-edge QDR SRAM offers lightning-fast speeds and exceptional reliability for a wide range of applications. With a reputable manufacturer like ISS behind it, you can trust in the quality and performance of this memory IC. Whether you're looking to enhance the efficiency of your commercial-grade devices or boost the speed of your industrial equipment, the IS61QDB251236A-250M3L is the perfect solution. Experience seamless operation and improved productivity with this versatile SRAM that delivers unparalleled value and benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Operating Mode: SYNCHRONOUS

Allows for faster and more efficient data transfer, making the product suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a standard voltage level, ensuring compatibility with a wide range of systems.

Maximum Clock Frequency (fCLK): 250 MHz

Enables high-speed data processing, making the product ideal for applications that require quick response times.

Memory IC Type: QDR SRAM

Utilizes Quad Data Rate (QDR) technology, allowing for improved data transfer rates and efficiency.

Technical Specifications

SRAM IS61QDB251236A-250M3L attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

.45 ns

Additional Features:

PIPELINED ARCHITECTURE

Maximum Clock Frequency (fCLK):

250 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e1

Length:

17 mm

Memory Density:

18874368 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA165,11X15,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.5/1.8,1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.27 Amp

Minimum Standby Voltage:

1.7 V

Sub-Category:

SRAMs

Maximum Supply Current:

1000 mA

Maximum Supply Voltage (Vsup):

1.89 V

Minimum Supply Voltage (Vsup):

1.71 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

15 mm

Trade Compliance

IS61QDB251236A-250M3L Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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