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IS61DDB251236A-250M3L

Integrated Silicon Solution

IS61DDB251236A-250M3L by Integrated Silicon Solution

IS61DDB251236A-250M3L by Integrated Silicon Solution is a 512Kx36 DDR SRAM with synchronous operation and 250 MHz clock frequency. It features a low profile grid array package, operates at 1.8V, and has a memory density of 18874368 bits. Ideal for applications requiring high-speed data processing in commercial temperature environments.

Median Price

$29.260

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$29.260

100+ parts

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700

$29.260

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Vyrian

USA . 7,520 parts In-Stock

1+ parts

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7,520

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 506 parts In-Stock

1+ parts

$12.994

100+ parts

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506

$12.994

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Continental Prestige Electronics

USA . 6,595 parts In-Stock

1+ parts

$29.260

100+ parts

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1k+ parts

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10k+ parts

$28.675

6,595

$29.260

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$28.675

Netroflash

USA . 100 parts In-Stock

1+ parts

$29.260

100+ parts

$28.675

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100

$29.260

$28.675

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Argo Parts USA

USA . 1,887 parts In-Stock

1+ parts

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1,887

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Overview

Unlock unparalleled performance and reliability with the IS61DDB251236A-250M3L by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-notch quality SRAM products that are perfect for a wide range of applications. Experience seamless operation and faster data processing with this synchronous SRAM, designed to meet your needs with its common I/O type and 512Kx36 organization. Trust ISS to provide you with the cutting-edge technology you need for maximum efficiency and productivity. Elevate your projects with the IS61DDB251236A-250M3L today!

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides durability and protection for the SRAM, ensuring a longer lifespan.

Surface Mount

YES - Easily mounted onto circuit boards, making installation quick and efficient.

Package Shape

RECTANGULAR - Allows for easy integration into various electronic devices and systems.

Operating Mode

SYNCHRONOUS - Enhances data transfer efficiency and synchronization within the SRAM.

Input/Output Type

COMMON - Simplifies the connection process and allows for seamless communication with other components.

Nominal Supply Voltage / Vsup

1.8V - Provides a stable power source for reliable performance of the SRAM.

Power Supplies (V)

1.5/1.8,1.8 - Offers flexibility in power input, catering to different system requirements.

No. of Terminals

165 - Provides ample connectivity options for versatile applications.

Package Style (Meter)

GRID ARRAY, LOW PROFILE - Compact and space-saving design ideal for compact electronic devices.

Maximum Operating Temperature

70 °C - Can withstand high temperatures, ensuring reliable operation even in harsh environments.

Organization

512KX36 - Offers a large memory capacity for storing and processing data effectively.

Output Characteristics

3-STATE - Allows for efficient data output with minimal interference.

Terminal Finish

TIN SILVER COPPER - Ensures strong connectivity and resistance to corrosion for long-term use.

Terminal Position

BOTTOM - Facilitates easy integration with circuit boards and other components.

Maximum Seated Height

1.4 mm - Low profile design for applications with space constraints.

Maximum Clock Frequency (fCLK)

250 MHz - Provides fast data processing speeds for enhanced performance.

Width

15 mm - Compact size for easy integration into various electronic devices.

Minimum Supply Voltage (Vsup)

1.71 V - Allows for operation at lower power levels, increasing energy efficiency.

Length

17 mm - Space-efficient design for seamless integration into electronic systems.

Temperature Grade

COMMERCIAL - Suitable for standard operating conditions in commercial applications.

Technology

CMOS - Offers low power consumption and high speed performance.

Parallel or Serial

PARALLEL - Enables simultaneous data transfer for efficient processing.

Terminal Form

BALL - Provides secure and reliable connections for stable performance.

Maximum Supply Current

550 mA - Supports high power consumption for demanding applications.

No. of Words

524288 words - Large memory capacity for storing extensive data.

Memory Width

36 - Wide memory width for processing large chunks of data efficiently.

Terminal Pitch

1 mm - Allows for precise and secure connections on circuit boards.

No. of Words Code

512K - High memory capacity for handling complex data processing tasks.

Moisture Sensitivity Level (MSL)

3 - Suitable for standard moisture exposure levels in typical environments.

Maximum Supply Voltage (Vsup)

1.89 V - Safe operating voltage limit to prevent damage to the SRAM.

Memory Density

18874368 bit - High memory density for storing a large amount of data efficiently.

Memory IC Type

DDR SRAM - Combines the benefits of DDR technology with the speed and reliability of SRAM.

Maximum Standby Current

0.27 Amp - Low standby current for energy-efficient operation when not in use.

Maximum Access Time

0.45 ns - Provides fast access times for quick and efficient data retrieval.

Technical Specifications

SRAM IS61DDB251236A-250M3L attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

.45 ns

Additional Features:

PIPELINED ARCHITECTURE

Maximum Clock Frequency (fCLK):

250 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B165

JESD-609 Code:

e1

Length:

17 mm

Memory Density:

18874368 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

165

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA165,11X15,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.5/1.8,1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.27 Amp

Minimum Standby Voltage:

1.7 V

Sub-Category:

SRAMs

Maximum Supply Current:

550 mA

Maximum Supply Voltage (Vsup):

1.89 V

Minimum Supply Voltage (Vsup):

1.71 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

15 mm

Trade Compliance

IS61DDB251236A-250M3L Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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