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IS61WV25616BLS-25TLI-TR

Integrated Silicon Solution

IS61WV25616BLS-25TLI-TR by Integrated Silicon Solution

IS61WV25616BLS-25TLI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with 3-STATE output. Operating at -40 to 85 °C, it has a standby voltage of 2V and max access time of 25ns. Ideal for industrial applications requiring fast and reliable parallel memory solutions.

Median Price

$3.964

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$3.964

100+ parts

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1k+ parts

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10k+ parts

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700

$3.964

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Vyrian

USA . 5,306 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,306

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,637 parts In-Stock

1+ parts

$3.964

100+ parts

-

1k+ parts

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10k+ parts

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3,637

$3.964

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Continental Prestige Electronics

USA . 808 parts In-Stock

1+ parts

$3.964

100+ parts

-

1k+ parts

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10k+ parts

$3.885

808

$3.964

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-

$3.885

AZTECH Wire

Italy . 803 parts In-Stock

1+ parts

$14.860

100+ parts

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803

$14.860

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QUARKTWIN TECHNOLOGY LTD

USA . 6,794 parts In-Stock

1+ parts

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1k+ parts

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6,794

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$3.885

1k+ parts

$3.766

10k+ parts

$3.686

1,000

-

$3.885

$3.766

$3.686

Overview

Unlock the power of seamless data storage and retrieval with the IS61WV25616BLS-25TLI-TR by Integrated Silicon Solution. Crafted with precision and expertise, this SRAM memory chip offers unparalleled reliability and performance for a wide range of applications. From industrial automation to telecommunications, this high-quality memory IC provides fast access times and low standby currents, ensuring optimal efficiency and speed. Trust in Integrated Silicon Solution's dedication to quality and innovation, and experience the difference with the IS61WV25616BLS-25TLI-TR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the SRAM, ensuring its longevity and reliability.

Power Supplies (V): 2.5/3.3

Compatibility with multiple power supplies allows for flexibility in system integration and operation.

Maximum Operating Temperature: 85 °C

The SRAM can operate effectively in high temperature environments, making it suitable for industrial applications.

Memory Width: 16

With a wide memory width, the SRAM can handle larger data chunks efficiently, enhancing overall performance.

Technology: CMOS

The CMOS technology used in this SRAM ensures low power consumption and high speed operation, making it energy efficient and fast.

Maximum Access Time: 25 ns

The fast access time of 25 ns ensures quick retrieval and storage of data, improving overall system responsiveness.

Technical Specifications

SRAM IS61WV25616BLS-25TLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

25 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Standby Current:

.009 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

25 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Trade Compliance

IS61WV25616BLS-25TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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