Loading...

IS61WV20488BLL-10TLI-TR

Integrated Silicon Solution

IS61WV20488BLL-10TLI-TR by Integrated Silicon Solution

IS61WV20488BLL-10TLI-TR by Integrated Silicon Solution is a 2MX8 SRAM with 3-STATE output, operating at -40 to 85 °C. It has a memory density of 16Mbit and operates in parallel mode with access time of 10ns. Ideal for industrial applications requiring fast and reliable memory storage.

Median Price

$18.000

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$18.000

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$18.000

-

-

-

Chip Stock

USA . 9,170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,170

-

-

-

-

Vyrian

USA . 5,831 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,831

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 460 parts In-Stock

1+ parts

$16.642

100+ parts

-

1k+ parts

-

10k+ parts

-

460

$16.642

-

-

-

Authorized Procurement Solutions

USA . 4,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,500

-

-

-

-

Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$17.640

1k+ parts

$17.100

10k+ parts

$16.740

50

-

$17.640

$17.100

$16.740

Overview

Experience lightning-fast performance and unmatched reliability with the IS61WV20488BLL-10TLI-TR by Integrated Silicon Solution. This top-of-the-line SRAM module boasts cutting-edge technology and a durable construction, making it ideal for industrial applications where speed and efficiency are crucial. With a memory density of 16777216 bits and a maximum access time of just 10 ns, this product offers exceptional value and benefits to customers looking for high-performance memory solutions. Trust ISS to deliver quality products that exceed expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this SRAM lightweight and durable, perfect for portable electronic devices.

Surface Mount: YES

With surface mount capability, this SRAM can be easily integrated into compact circuit board designs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and alignment on the circuit board, ensuring proper connectivity and functionality.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode of this SRAM allows for high-speed data retrieval and processing, ideal for applications requiring real-time performance.

Input/Output Type: COMMON

The common input/output type simplifies the design and integration process, making this SRAM user-friendly and versatile.

Power Supplies (V): 2.5/3.3

With support for multiple power supply voltages, this SRAM can be used in a variety of electronic devices, providing flexibility and compatibility.

No. of Terminals: 44

The 44 terminals on this SRAM ensure reliable connectivity and data transfer, making it a robust and efficient memory solution.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile package style saves space on the circuit board, making it suitable for compact electronic devices with size constraints.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range of 85°C ensures reliable performance in harsh environmental conditions, increasing the product's durability and longevity.

Organization: 2MX8

The 2MX8 organization of this SRAM provides efficient data storage and retrieval, enhancing the overall performance of the electronic device it's integrated into.

Output Characteristics: 3-STATE

The 3-STATE output characteristics of this SRAM enable tri-state logic, allowing for flexible signal control and data flow management.

Minimum Standby Voltage: 1.2 V

The low minimum standby voltage requirement of 1.2 V helps conserve power and extend battery life in battery-operated devices utilizing this SRAM.

Minimum Operating Temperature: -40 °C

The wide minimum operating temperature range of -40°C ensures reliable operation in extreme temperature conditions, making this SRAM suitable for various applications.

Terminal Position: DUAL

The dual terminal position design of this SRAM simplifies installation and prevents signal interference, ensuring optimal performance and reliability.

Temperature Grade: INDUSTRIAL

The industrial temperature grade rating of this SRAM indicates its suitability for use in harsh industrial environments, where reliability and durability are crucial.

Technology: CMOS

The CMOS technology used in this SRAM ensures low power consumption and high-speed operation, making it an energy-efficient and fast memory solution.

Parallel or Serial: PARALLEL

The parallel data transfer mode of this SRAM allows for simultaneous transfer of multiple data bits, ensuring efficient and high-speed data processing.

Terminal Form: GULL WING

The gull wing terminal form factor of this SRAM simplifies soldering and ensures secure connections, making it easy to integrate into electronic devices.

Maximum Supply Current: 100 mA

The maximum supply current of 100 mA ensures stable and reliable operation, even under heavy load conditions, making this SRAM a dependable memory solution.

No. of Words: 2097152 words

With a high number of words, this SRAM offers ample storage capacity for data-intensive applications, ensuring efficient data processing and management.

Memory Width: 8

The memory width of 8 bits allows for the storage and retrieval of data in 8-bit chunks, enabling efficient data handling and processing in electronic devices.

Terminal Pitch: 0.8 mm

The terminal pitch of 0.8 mm facilitates easy connection and alignment, ensuring secure and reliable data transfer between the SRAM and other components on the circuit board.

No. of Words Code: 2M

The 2M words code simplifies addressing and data retrieval, enhancing the usability and efficiency of this SRAM in various applications.

Memory Density: 16777216 bit

With a high memory density of 16777216 bits, this SRAM offers ample storage capacity for data-intensive applications, ensuring efficient data processing and management.

Memory IC Type: STANDARD SRAM

The use of standard SRAM memory IC type ensures compatibility with a wide range of electronic devices and systems, making this SRAM a versatile and reliable memory solution.

Maximum Standby Current: 0.025 Amp

The low maximum standby current of 0.025 Amp helps conserve power and extend battery life, making this SRAM energy-efficient and suitable for portable devices.

Maximum Access Time: 10 ns

The fast maximum access time of 10 ns allows for quick data retrieval and processing, enhancing the overall performance and responsiveness of the electronic device utilizing this SRAM.

Technical Specifications

SRAM IS61WV20488BLL-10TLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

44

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Standby Current:

.025 Amp

Minimum Standby Voltage:

1.2 V

Sub-Category:

SRAMs

Maximum Supply Current:

100 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Trade Compliance

IS61WV20488BLL-10TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20